公开(公告)号：EP3117462A1

公开(公告)日：2017-01-18

申请号：EP15715628.2

申请日：2015-03-30

申请人： Qualcomm Incorporated

发明人： MOJUMDER, Niladri Narayan ,  WANG, Zhongze ,  SONG, Stanley Seungchul ,  YEAP, Choh Fei

IPC分类号： H01L27/11 ,  H01L27/02

CPC分类号： H01L27/1104 ,  H01L27/0207

摘要： A static random access memory (SRAM) cell (340) includes a first conductive layer (M1) including a wordline landing pad (320) extending into a neighboring memory cell (360) in an adjacent row of a memory array. The wordline landing pad in the first conductive layer is electrically isolated from all gate contacts of the neighboring memory cell. The SRAM cell also includes a second conductive layer including a wordline (WL1) coupled to the wordline landing pad in the first conductive layer. The SRAM cell further includes a first via (Via0) coupling a gate contact of a pass transistor gate in the SRAM cell to the wordline landing pad in the first conductive layer and a second via (Via1) coupling the wordline landing pad and the wordline of the second conductive layer.

摘要翻译： 静态随机存取存储器（SRAM）单元包括第一导电层，其包括延伸到存储器阵列的相邻行中的相邻存储器单元的字线着陆焊盘。 第一导电层中的字线着陆焊盘与相邻存储器单元的所有栅极触点电隔离。 SRAM单元还包括第二导电层，其包括耦合到第一导电层中的字线着陆焊盘的字线。 SRAM单元还包括第一通孔，其将SRAM单元中的通过晶体管栅极的栅极接触耦合到第一导电层中的字线着陆焊盘。 SRAM单元还包括连接字线着陆焊盘和第二导电层的字线的第二通孔。

公开(公告)号：EP3105782A1

公开(公告)日：2016-12-21

申请号：EP15702602.2

申请日：2015-01-08

申请人： Qualcomm Incorporated

发明人： SONG, Stanley Seungchul ,  WANG, Zhongze ,  KWON, Ohsang ,  RIM, Kern ,  ZHU, John Jianhong ,  CHEN, Xiangdong ,  VANG, Foua ,  STEPHANY, Raymond George ,  YEAP, Choh Fei

IPC分类号： H01L21/768 ,  H01L23/485 ,  H01L23/522

CPC分类号： H01L23/5283 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5226 ,  H01L27/088 ,  H01L29/41775 ,  H01L29/42312 ,  H01L2027/11866 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a gate and a first active contact adjacent to the gate. Such a device further includes a first stacked contact electrically coupled to the first active contact, including a first isolation layer on sidewalls electrically isolating the first stacked contact from the gate. The device also includes a first via electrically coupled to the gate and landing on the first stacked contact. The first via electrically couples the first stacked contact and the first active contact to the gate to ground the gate.

公开(公告)号：EP3063788B1

公开(公告)日：2020-10-21

申请号：EP14766337.1

申请日：2014-09-03

申请人： Qualcomm Incorporated

发明人： SONG, Stanley Seungchul ,  YEAP, Choh Fei ,  WANG, Zhongze ,  MOJUMDER, Niladri Narayan

IPC分类号： H01L21/8258 ,  H01L21/822 ,  H01L27/06 ,  H01L27/092 ,  H01L21/762

公开(公告)号：EP3105782B1

公开(公告)日：2018-08-01

申请号：EP15702602.2

申请日：2015-01-08

申请人： Qualcomm Incorporated

发明人： SONG, Stanley Seungchul ,  WANG, Zhongze ,  KWON, Ohsang ,  RIM, Kern ,  ZHU, John Jianhong ,  CHEN, Xiangdong ,  VANG, Foua ,  STEPHANY, Raymond George ,  YEAP, Choh Fei

IPC分类号： H01L21/768 ,  H01L23/485 ,  H01L23/522

CPC分类号： H01L23/5283 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5226 ,  H01L27/088 ,  H01L29/41775 ,  H01L29/42312 ,  H01L2027/11866 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a gate and a first active contact adjacent to the gate. Such a device further includes a first stacked contact electrically coupled to the first active contact, including a first isolation layer on sidewalls electrically isolating the first stacked contact from the gate. The device also includes a first via electrically coupled to the gate and landing on the first stacked contact. The first via electrically couples the first stacked contact and the first active contact to the gate to ground the gate.

公开(公告)号：EP3224868A1

公开(公告)日：2017-10-04

申请号：EP15781512.7

申请日：2015-09-30

申请人： Qualcomm Incorporated

发明人： XU, Jeffrey Junhao ,  SONG, Stanley Seungchul ,  MACHKAOUTSAN, Valdimir ,  BADAROGLU, Mustafa ,  BAO, Junjing ,  ZHU, John Jianhong ,  YANG, Da ,  YEAP, Choh Fei

IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L27/0924 ,  H01L21/285 ,  H01L21/76897 ,  H01L21/823821 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78696 ,  H01L2029/7858

摘要： A semiconductor device includes a gate stack. The semiconductor device also includes a wrap-around contact arranged around and contacting substantially all surface area of a regrown source/drain region of the semiconductor device proximate to the gate stack.

摘要翻译： 半导体器件包括栅极叠层。 该半导体器件还包括环绕接触件，该接触件布置在接近栅极叠层的半导体器件的再生长源极/漏极区的基本上全部表面区域周围并与其接触。

公开(公告)号：EP3175486A2

公开(公告)日：2017-06-07

申请号：EP15795019.7

申请日：2015-06-10

申请人： Qualcomm Incorporated

发明人： XU, Jeffrey Junhao ,  RIM, Kern ,  SONG, Stanley Seungchul ,  YEAP, Choh Fei

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/49

CPC分类号： H01L29/7843 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7845 ,  H01L29/785

摘要： A fin field-effect transistor (FinFET) includes a gate stack on a surface of a semiconductor fin. The semiconductor fin may include a capping material and a stressor material. The stressor material is confined by the capping material to a region proximate the gate stack. The stressor material provides stress on the semiconductor fin proximate the gate stack.

摘要翻译： 鳍式场效应晶体管（FinFET）包括在半导体鳍片的表面上的栅极堆叠。 半导体鳍片可以包括封盖材料和应力源材料。 应力源材料被封盖材料限制到邻近栅极叠层的区域。 应力源材料在接近栅极叠层的半导体鳍片上提供应力。

公开(公告)号：EP3111481A1

公开(公告)日：2017-01-04

申请号：EP15710619.6

申请日：2015-02-17

申请人： Qualcomm Incorporated

发明人： XU, Jeffrey Junhao ,  YEAP, Choh Fei

IPC分类号： H01L29/78 ,  H01L29/36

CPC分类号： H01L29/7849 ,  H01L21/02164 ,  H01L21/02238 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor fin is on a substrate, and extends in a longitudinal direction parallel to the substrate. The fin projects, in a vertical direction, to a fin top at a fin height above the substrate. An embedded fin stressor element is embedded in the fin. The fin stressor element is configured to urge a vertical compression force within the fin, parallel to the vertical direction. Optionally, the semiconductor material includes silicon, and embedded fin stressor element includes silicon dioxide.

摘要翻译： 半导体鳍片在基板上，并且在与基板平行的纵向方向上延伸。 翅片在垂直方向上突出到底板上方翅片高度的翅片顶部。 嵌入式翅片应力元件嵌入翅片。 翅片应力元件构造成促使平行于垂直方向的翅片内的垂直压缩力。 可选地，半导体材料包括硅，并且嵌入式翅片应力元件包括二氧化硅。

公开(公告)号：EP3063788A1

公开(公告)日：2016-09-07

申请号：EP14766337.1

申请日：2014-09-03

申请人： Qualcomm Incorporated

发明人： SONG, Stanley Seungchul ,  YEAP, Choh Fei ,  WANG, Zhongze ,  MOJUMDER, Niladri Narayan

IPC分类号： H01L21/8258 ,  H01L21/822 ,  H01L27/06 ,  H01L27/092 ,  H01L21/762

摘要： Methods for integrating heterogeneous channel material into a semiconductor device, and semiconductor devices that integrate heterogeneous channel material. A method for fabricating a semiconductor device includes processing a first substrate of a first material at a first thermal budget to fabricate a p-type device. The method further includes coupling a second substrate of a second material to the first substrate. The method also includes processing the second substrate to fabricate an n-type device at a second thermal budget that is less than the first thermal budget. The p-type device and the n-type device may cooperate to form a complementary device.

公开(公告)号：EP3411905A2

公开(公告)日：2018-12-12

申请号：EP17701394.3

申请日：2017-01-06

申请人： Qualcomm Incorporated

发明人： MACHKAOUTSAN, Vladimir ,  SONG, Stanley Seungchul ,  BADAROGLU, Mustafa ,  ZHU, John Jianhong ,  BAO, Junjing ,  XU, Jeffrey Junhao ,  YANG, Da ,  NOWAK, Matthew Michael ,  YEAP, Choh Fei

IPC分类号： H01L29/06 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/423 ,  H01L27/06

CPC分类号： H01L27/088 ,  H01L21/823418 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823487 ,  H01L21/823885 ,  H01L27/0207 ,  H01L27/0688 ,  H01L29/0649 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/42392

摘要： A device includes a substrate, a first nanowire field effect transistor (FET), and a second nanowire FET positioned between the substrate and the first nanowire FET. The device also includes a first nanowire electrically coupled to the first nanowire FET and to the second nanowire FET.

公开(公告)号：EP3257080A1

公开(公告)日：2017-12-20

申请号：EP15805719.0

申请日：2015-11-25

申请人： QUALCOMM Incorporated

发明人： MOJUMDER, Niladri Narayan ,  CHABA, Ritu ,  LIU, Ping ,  SONG, Stanley Seungchul ,  WANG, Zhongze ,  YEAP, Choh Fei

IPC分类号： H01L27/02 ,  G11C8/14 ,  G11C11/418 ,  H01L27/11

CPC分类号： H01L27/1104 ,  G11C8/14 ,  G11C8/16 ,  G11C11/418 ,  G11C11/419 ,  H01L21/3213 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/11

摘要： An apparatus includes a first metal layer coupled to a bit cell. The apparatus also includes a third metal layer including a write word line that is coupled to the bit cell. The apparatus further includes a second metal layer between the first metal layer and the third metal layer. The second metal layer includes two read word lines coupled to the bit cell.