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    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER
    16.
    发明公开
    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER 有权
    方法用于蚀刻氧化硅的受害者层

    公开(公告)号：EP2046677A1

    公开(公告)日：2009-04-15

    申请号：EP07789096.0

    申请日：2007-08-02

    Applicant: Point 35 Microstructures Limited

    Inventor： O'HARA, Anthony

    IPC: B81C1/00

    CPC classification number: B81C1/00476 ,  B81C2201/0133

    Abstract: A controlled method of releasing a microstructure comprising a silicon oxide layer located between a substrate layer and a layer to be released from the silicon oxide layer is described. The method comprises the step of exposing the silicon oxide layer to a hydrogen fluoride vapour in a process chamber having controlled temperature and pressure conditions. A by- product of this reaction is water which also acts as a catalyst for the etching process. It is controlled employment of this inherent water source that results in a condensed fluid layer forming, and hence etching taking place, only on the exposed surfaces of the oxide layer. The described method therefore reduces the risk of the effects of capillary induced stiction within the etched microstructure and/or corrosion within the microstructure and the process chamber itself.

    Surfactant-enhanced protection of micromechanical components from galvanic degradation
    18.
    发明公开
    Surfactant-enhanced protection of micromechanical components from galvanic degradation 审中-公开
    通过使用表面活性剂从电分解改进的保护微机械元件

    公开(公告)号：EP1403211A3

    公开(公告)日：2005-09-14

    申请号：EP03255693.8

    申请日：2003-09-11

    Applicant: PTS Corporation

    Inventor： Staple, Bevan ,  Buriak, Jilian

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B82Y30/00 ,  B81C1/00476 ,  B81C1/00801 ,  B81C2201/0114 ,  B81C2201/0133 ,  B81C2201/0139 ,  B81C2201/053

    Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate (step 102). The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component (step 104 or 106). The sacrificial material is removed with a release solution (step 108 or 110). At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.

    MICROMACHINE SWITCH AND ITS PRODUCTION METHOD
    19.
    发明公开
    MICROMACHINE SWITCH AND ITS PRODUCTION METHOD 审中-公开
    MICROMASCHINEN-SCHALTER UND SEIN VERFAHRENFÜRDIE HERSTELLUNG。

    公开(公告)号：EP1146533A1

    公开(公告)日：2001-10-17

    申请号：EP99959908.7

    申请日：1999-12-20

    Applicant: NEC Corporation

    Inventor： SUZUKI, Kenichiro ,  MARUMOTO, Tsunehisa

    IPC: H01H59/00 ,  B81B3/00 ,  B81C1/00

    CPC classification number: H01H59/0009 ,  B81B2201/014 ,  B81B2201/016 ,  B81C1/0015 ,  B81C2201/0133 ,  H01H1/20

    Abstract: A micro-machine switch in accordance with the present invention includes a supporter having a predetermined height relative to a surface of a substrate, a flexible cantilever projecting from the supporter in parallel with a surface of the substrate, and having a distal end facing a gap formed between two signal lines, a contact electrode formed on the cantilever, facing the gap, a lower electrode formed on the substrate in facing relation with a part of the cantilever, and an intermediate electrode formed on the cantilever in facing relation with the lower electrode. The micro-machine switch can operate at a lower drive voltage than a voltage at which a conventional micro-machine switch operates, and can enhance a resistance of an insulating film against a voltage.

    Abstract translation: 根据本发明的微型机器开关包括：相对于基板的表面具有预定高度的支撑件，从支撑件平行于基板的表面突出的柔性悬臂，并且具有面向间隙的远端 形成在两个信号线之间，形成在悬臂上的接触电极，面对间隙;与基板的一部分悬臂形成在基板上的下电极，以及形成在悬臂上的中间电极，与下电极 。 微机开关可以在比常规微机开关操作的电压低的驱动电压下工作，并且可以增强绝缘膜对电压的电阻。

    PLASMA-ASSISTED MICROSTRUCTURE ALIGNMENT AND PRE-BONDING METHOD OF GLASS OR QUARTZ CHIP
    20.
    发明公开
    PLASMA-ASSISTED MICROSTRUCTURE ALIGNMENT AND PRE-BONDING METHOD OF GLASS OR QUARTZ CHIP 有权

    公开(公告)号：EP3306650A4

    公开(公告)日：2018-07-25

    申请号：EP15903951

    申请日：2015-11-17

    Applicant: UNIV BEIJING TECHNOLOGY

    Inventor： GUO GUANGSHENG ,  WANG SIYU ,  PU QIAOSHENG ,  WANG XIAYAN

    IPC: H01L21/20 ,  B81C3/00 ,  H01L21/68

    CPC classification number: H01L21/67028 ,  B81C1/00928 ,  B81C3/001 ,  B81C3/002 ,  B81C2201/0102 ,  B81C2201/0128 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2203/051 ,  H01L21/68

    Abstract: The plasma-assisted method of precise alignment and pre-bonding for microstructure of glass and quartz microchip belongs to micromachining and bonding technologies of the microchip. The steps of which are as follows: photoresist and chromium layers on glass or quartz microchip are completely removed followed by sufficient cleaning of the surface with nonionic surfactant and quantities of ultra-pure water. Then the surface treatment is proceeded for an equipping surface with high hydrophily with the usage of plasma cleaning device. Under the drying condition, the precise alignment is accomplished through moving substrate and cover plate after being washed with the help of microscope observation. Further on, to achieve precise alignment and pre-bonding of the microstructure of glass and quartz microchip, a minute quantity of ultrapure water is instilled into a limbic crevice for adhesion, and entire water is completely wiped out by vacuum drying following sufficient squeezing. Based on the steps above, it is available to achieve permanent bonding by further adopting thermal bonding method. In summary, it takes within 30 min to finish the whole operation of precise alignment and pre-bonding by this method. Besides, this method is of great promise because of its speediness, efficiency, easy maneuverability, operational safety and wide applications.

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