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    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    11.
    发明授权
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
    法半导体器件

    公开(公告)号：EP0780891B1

    公开(公告)日：2003-05-02

    申请号：EP96922271.0

    申请日：1996-07-09

    申请人： ROHM CO., LTD.

    发明人： SAKAMOTO, Kazuhisa, Rohm Co., Ltd.

    IPC分类号： H01L21/263 ,  H01L21/331

    CPC分类号： H01L29/66295 ,  H01L21/263 ,  Y10S148/003 ,  Y10S148/004 ,  Y10S148/08 ,  Y10S148/09 ,  Y10S148/092

    摘要： A method for manufacturing a semiconductor device in which crystal defects are generated in a semiconductor crystal by irradiating a semiconductor substrate (1) with a particle beam. In the preceding process of the irradiation process, the substrate (1) is heat-treated such that the temperature of the substrate (1) is raised rapidly in ten minutes to 550-850 °C and maintained for one second to 60 minutes. Crystal defects are generated in the crystal by irradiating the crystal with such a particle beam as an electron beam, the life time of carriers is shortened, and accordingly the switching speed is increased, not lowering the electric characteristics such as the current amplification factor. Thus a semiconductor device having both a high switching speed and good electric characteristics is fabricated.

    Herstellung von Halbleiterscheiben mit verbesserter Kontrolle der Innenstörstellen
    15.
    发明公开
    Herstellung von Halbleiterscheiben mit verbesserter Kontrolle der Innenstörstellen 失效
    具有改进的Innenstörstellen控制半导体晶片的制造。

    公开(公告)号：EP0328048A2

    公开(公告)日：1989-08-16

    申请号：EP89102106.5

    申请日：1989-02-08

    申请人： MEMC Electronic Materials, Inc.

    发明人： Huber, Walter, Dr.

    IPC分类号： H01L21/322 ,  H01L21/324

    CPC分类号： C30B33/02 ,  C30B29/06 ,  H01L21/3221 ,  H01L21/3225 ,  Y10S148/004 ,  Y10S148/024 ,  Y10S148/06 ,  Y10S148/071 ,  Y10S257/928

    摘要： Die Konzentration der Innenstörstellen in einer Halbleiter­scheibe wird in einem zweistufigen Wärmeverfahren gesteu­ert. In einer Konzentrationsreduktionsphase wird die Scheibe schnell auf eine erhöhte Temperatur im Bereich von ungefähr 900 bis 1350° C erwärmt, was zu einer teilweisen oder gesamten Auflösung von ausscheidbaren Verunreinigungen in der Scheibe führt. In einer Konzentrationssteigerungs­stufe werden die Scheiben einem Temperverfahren bei relativ niedriger Temperatur, bei dem die Dichte der potentiellen Innenstörstellen erhöht wird, unterworfen.
    Durch entsprechendes Steuern der Verfahrenstemperaturen und Behandlungszeiten können die zwei Stufen in jeder Reihen­folge durchgeführt werden, um Scheiben zu erhalten, die Innenstörstellenkonzentrationen innerhalb eines gewünschten Bereichs aufweisen.

    摘要翻译： 所述Innenstörstellen的在半导体晶片的浓度被控制在两阶段加热处理。 在一个浓度降低阶段，晶片被快速加热到升高的温度在约900至1350℃的范围内，从而导致在盘可排泄的杂质的部分或完全消退。 在浓度增加的阶段，晶片处其中电位Innenstörstellen的密度增加相对低的温度进行退火。 通过适当地控制工艺温度和处理时间，这两个阶段可以按任何顺序，以获得已在所需范围内Innenstörstellenkonzentrationen光盘来进行。

    PROCESS FOR MANUFACTURING A GALLIUM RICH GALLIUM NITRIDE FILM
    17.
    发明公开
    PROCESS FOR MANUFACTURING A GALLIUM RICH GALLIUM NITRIDE FILM 有权
    用于生产镓GALLIUMNITRIDFILMS

    公开(公告)号：EP1551768A4

    公开(公告)日：2008-05-14

    申请号：EP03724623

    申请日：2003-05-19

    申请人： GALLIUM ENTPR PTY LTD

    发明人： BUTCHER KENNETH SCOTT A ,  TANSLEY TREVOR LIONEL ,  AFIFUDDIN

    IPC分类号： C01B21/06 ,  C01G15/00 ,  C23C16/00 ,  C23C16/02 ,  C23C16/30 ,  C23C16/34 ,  C30B25/02 ,  C30B25/10 ,  C30B29/40 ,  C30B33/02 ,  H01L21/205

    CPC分类号： C30B29/406 ,  C01G15/00 ,  C01P2002/72 ,  C01P2004/03 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/02 ,  C30B25/105 ,  C30B33/02 ,  Y10S148/004

    摘要： A process for the manufacture of a gallium rich gallium nitride film is described. The process comprises (a) preparing a reaction mixture containing a gallium species and a nitrogen species, the gallium species and the nitrogen species being selected such that, when they react with each other, gallium nitride is formed; and (b) growing the gallium rich gallium nitride film from the reaction mixture, by allowing the gallium species to react with the nitrogen species and to deposit gallium nitride on a substrate selected from the group consisting of silicon, glass, sapphire, quartz and crystalline materials having a lattice constant closely matched to gallium nitride, including zinc oxide, optionally with a zinc oxide buffer layer, at a temperature of from about 480 °C to about 900 °C and in the presence of a gaseous environment in which the partial pressure of oxygen is less than 10 Torr, wherein the ratio of gallium atoms to nitrogen atoms in the gallium rich gallium nitride film is from 1.01 to 1.20. The invention also provides the option of annealing the gallium rich gallium nitride film at a temperature of from about 20 °C to about 650 °C and for a time sufficient to decrease the resistivity of the film so that it becomes electrically conductive, for instance to a resistivity below 100 ohm.cm.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    20.
    发明公开
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
    HERSTELLUNGSVERFAHRENFÜRHALBLEITERANORDNUNG

    公开(公告)号：EP0780891A1

    公开(公告)日：1997-06-25

    申请号：EP96922271.0

    申请日：1996-07-09

    申请人： ROHM CO., LTD.

    发明人： SAKAMOTO, Kazuhisa, Rohm Co., Ltd.

    IPC分类号： H01L21/322

    CPC分类号： H01L29/66295 ,  H01L21/263 ,  Y10S148/003 ,  Y10S148/004 ,  Y10S148/08 ,  Y10S148/09 ,  Y10S148/092

    摘要： Disclosed is a method of manufacturing a semiconductor device wherein a corpuscular beam is radiated to a semiconductor substrate to create crystal defects therein, characterized in that said semiconductor substrate is subjected to a heat treatment, e.g. for 1 second to 60 minutes, wherein rapid heating-up, e.g. raising temperature to 550 to 850 °C within 10 minutes, is done in a process prior to that of carrying out of the radiation with a corpuscular beam. By doing so, there is provided a semiconductor device which is free from degradation in electrical characteristics such as current amplification factor and has an increased switching speed, even where crystal defects are created through the radiation of corpuscular beam such as an electron beam to shorten the carrier lifetime. Thus, the inventive semiconductor device is satisfied by both requirements of switching speed and electrical characteristic.

    摘要翻译： 公开了一种制造半导体器件的方法，其中将粒子束辐射到半导体衬底以在其中产生晶体缺陷，其特征在于，对所述半导体衬底进行热处理，例如， 1秒至60分钟，其中快速加热，例如， 在10分钟内将温度提高到550〜850℃，在用红细胞束进行辐射之前的过程中进行。 通过这样做，提供了一种半导体器件，其即使在通过诸如电子束的粒子束的辐射产生晶体缺陷的情况下，也不会有诸如电流放大系数的电特性的劣化并具有增加的切换速度，从而缩短 载体寿命。 因此，本发明的半导体器件通过开关速度和电气特性的要求得到满足。