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    Apparatus and methods for ion implantation
    11.
    发明公开
    Apparatus and methods for ion implantation 失效
    Vorrichtung und Verfahren zur Ionenimplantation。

    公开(公告)号：EP0139377A1

    公开(公告)日：1985-05-02

    申请号：EP84305543.5

    申请日：1984-08-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Aitken, Derek

    IPC: H01L21/265 ,  H01J37/317 ,  H01J3/04

    CPC classification number: H01J49/30 ,  H01J27/022 ,  H01J27/028 ,  H01J27/14 ,  H01J37/05 ,  H01J37/08 ,  H01J37/3171

    Abstract: O The disclosure relates to a system for implanting ions into a target element including a source arrangement (130) for producing an ion beam (131); a beam analyzing arrangement (140) for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement (150) disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element (171). The analyzing arrangement has an ion dispersion plane associated therewith. The source arrangement (130) has an associated ion emitting envelope (131A; 131B) including an area of substantial extension in a plane parallel to the ion dispersion plane and producing ions entering said analyzing arrangement which are travelling substantially either toward or from a common apparent line object lying in a plane perpendicular to the ion dispersion plane.

    Abstract translation: 本公开涉及一种用于将离子注入到包括用于产生离子束（131）的源装置（130）的靶元件中的系统。 用于接收离子束并基于质量选择性地分离光束中的各种离子物质以产生分析束的光束分析装置（140）; 以及设置在分析光束的路径中以允许预选离子物质传递到目标元件（171）的光束分辨装置（150）。 分析装置具有与其相关联的离子色散平面。 源装置（130）具有相关联的离子发射外壳（131A; 131B），其包括在平行于离子分散平面的平面中具有显着延伸的区域，并且产生进入所述分析装置的离子，其基本上朝向或来自共同的表观 线对象位于垂直于离子色散平面的平面中。

    Plasma discharge ion source
    12.
    发明公开
    Plasma discharge ion source 失效
    Entladungs-Plasmaionenquelle。

    公开(公告)号：EP0000843A1

    公开(公告)日：1979-02-21

    申请号：EP78300268.6

    申请日：1978-08-08

    Applicant: Western Electric Company, Incorporated

    Inventor： Williams, Norman

    IPC: H01J27/00 ,  H01J3/04

    CPC classification number: H01J27/14

    Abstract: It has been found that the proportions of the various ions produced by a plasma discharge source depends on the temperature of the plasma. In this invention means are provided increasing the temperature of the plasma. This is achieved by an arrangement (18, 34) which provides a containing field 32 which restrains the passage of electrons from the plasma to the anode (12), both radially outwards and axially to the end walls (30).

    Abstract translation: 已经发现，由等离子体放电源产生的各种离子的比例取决于等离子体的温度。 在本发明中，提供增加等离子体的温度的手段。 这通过一种布置（18,34）来实现，该装置提供容纳场32，其限制电子从等离子体通向阳极（12），径向向外和轴向延伸到端壁（30）。

    ION SOURCE WITH SUBSTANTIALLY PLANAR DESIGN
    14.
    发明授权
    ION SOURCE WITH SUBSTANTIALLY PLANAR DESIGN 有权
    基本上平面结构离子源

    公开(公告)号：EP1825491B1

    公开(公告)日：2008-09-24

    申请号：EP05818170.2

    申请日：2005-11-07

    Applicant: Guardian, Industries Corp.

    Inventor： LUTEN, Henry, A. ,  VEERASAMY, Vijayen, S.

    IPC: H01J27/14 ,  H01J3/04 ,  H01J37/08

    CPC classification number: H01J37/08 ,  H01J3/04 ,  H01J27/143

    Abstract: In certain example embodiments of this invention, there is provide an ion source including an anode (25) and a cathode (5). In certain example embodiments, the cathode does not overhang over the anode, or vice versa. Since no, or fewer, areas of overhang are provided between the anode and cathode, there is less undesirable build-up on the anode and/or cathode during operation of the ion source so that the source can run more efficiently. Moreover, in certain example embodiments, an insulator (35) such as a ceramic or the like is provided between the anode and cathode.

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