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公开(公告)号:EP2950347B1
公开(公告)日:2018-10-17
申请号:EP15169098.9
申请日:2015-05-26
发明人: Mollard, Laurent , Baier, Nicolas
IPC分类号: H01L27/146 , H01L31/0296 , H01L31/103 , H01L31/18 , H01L27/144 , H01L31/0352
CPC分类号: H01L27/14678 , H01L27/1443 , H01L27/14649 , H01L31/02966 , H01L31/035281 , H01L31/03529 , H01L31/1032 , H01L31/1832 , Y02E10/50
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12.VERFAHREN, HALBLEITERDETEKTOR UND DETEKTORANORDNUNG ZUR DETEKTION VON SONNENLICHT 有权
标题翻译: 用于检测阳光的方法,半导体探测器和探测器组件公开(公告)号:EP3035012B1
公开(公告)日:2018-02-14
申请号:EP15197783.2
申请日:2015-12-03
发明人: Erlbacher, Tobias
IPC分类号: H01L31/0312 , H01L31/103 , H01L31/105 , G01J1/42
CPC分类号: H01L31/1037 , B60H1/0075 , G01J1/02 , G01J1/42 , G01J1/429 , G01J2001/4266 , H01L25/03 , H01L27/1446 , H01L27/148 , H01L29/161 , H01L31/02161 , H01L31/02162 , H01L31/0312 , H01L31/103 , H01L31/105 , H01L2924/0002 , H01L2924/00
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13.
公开(公告)号:EP2141749B8
公开(公告)日:2016-12-07
申请号:EP09012804.2
申请日:2004-07-23
发明人: Shibayama, Katsumi
IPC分类号: H01L31/0392 , H01L31/103 , H01L31/105 , H01L27/146
CPC分类号: H01L31/0392 , H01L27/14618 , H01L27/14625 , H01L27/14634 , H01L27/1464 , H01L27/14645 , H01L27/1469 , H01L31/0203 , H01L31/03921 , H01L31/103 , H01L31/105 , H01L2224/13 , H01L2924/19107 , Y02E10/50
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14.METHOD OF MANUFACTURING RADIATION DETECTOR, RADIATION DETECTOR, AND RADIOGRAPHIC DEVICE 有权
标题翻译: 用于生产的射线探测器,辐射探测器和影像学设备公开(公告)号:EP2416177B1
公开(公告)日:2016-06-08
申请号:EP09842579.6
申请日:2009-04-03
发明人: TOKUDA, Satoshi , OKAMOTO, Tamotsu , KISHIHARA, Hiroyuki , KAINO, Masatomo , YOSHIMUTA, Toshinori , TANABE, Koichi
IPC分类号: G01T1/24 , H01L31/09 , H01L31/103
CPC分类号: G01T1/24 , H01L31/115
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15.
公开(公告)号:EP2838120B1
公开(公告)日:2016-03-23
申请号:EP13180134.2
申请日:2013-08-12
IPC分类号: H01L31/028 , H01L31/0352 , H01L31/068 , H01L31/103 , H01L31/18 , H01L21/20
CPC分类号: H01L31/028 , H01L21/268 , H01L21/3247 , H01L31/035209 , H01L31/065 , H01L31/068 , H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
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16.DIODE P/N À HÉTÉROSTRUCTURE CONTROLÉE AUTOPOSITIONNÉE SUR HGCDTE POUR IMAGEURS INFRAROUGES 有权
标题翻译: P-N二极管,用于以受控的和自定位的HgCdTe异质结构的红外线图像传感器公开(公告)号:EP2786425B1
公开(公告)日:2016-03-02
申请号:EP12790573.5
申请日:2012-11-26
发明人: MOLLARD, Laurent , BAIER, Nicolas , ROTHMAN,Johan
IPC分类号: H01L31/103 , H01L31/18
CPC分类号: H01L31/109 , H01L31/02966 , H01L31/1032 , H01L31/1832
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17.STRUCTURE SEMICONDUCTRICE APTE A RECEVOIR UN RAYONNEMENT ÉLECTROMAGNÉTIQUE, COMPOSANT SEMICONDUCTEUR ET PROCÉDÉ DE FABRICATION D'UNE TELLE STRUCTURE SEMICONDUCTRICE 有权
标题翻译: 半导体结构用于接收电磁辐射,半导体元件和用于制备这种半导体结构公开(公告)号:EP2786426B1
公开(公告)日:2015-12-30
申请号:EP12790921.6
申请日:2012-11-27
IPC分类号: H01L31/103 , H01L31/18
CPC分类号: H01L27/1463 , H01L27/14649 , H01L31/02327 , H01L31/102 , H01L31/1032 , H01L31/18
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18.GAS MONITORING DEVICE, COMBUSTION STATE MONITORING DEVICE, SECULAR CHANGE MONITORING DEVICE, AND IMPURITY CONCENTRATION MONITORING DEVICE 审中-公开
标题翻译: DEVICE FOR气体检测装置燃烧了好几天的外汇管制状态监测设备和仪器监测杂质的公开(公告)号:EP2372342A4
公开(公告)日:2014-12-17
申请号:EP09834576
申请日:2009-07-30
发明人: INADA HIROSHI , NAGAI YOUICHI
IPC分类号: G01N21/3504 , B82Y15/00 , B82Y20/00 , G01J1/02 , G01J5/00 , G01J5/28 , G01J5/60 , G01N21/35 , G01N21/359 , H01L31/0352 , H01L31/10 , H01L31/103
CPC分类号: G01J5/602 , G01J5/0044 , G01J2005/0077 , G01N21/3504 , G01N21/359 , G01N2021/3531 , G01N2201/0833 , G01N2201/0846 , H01L31/035209 , H01L31/1035 , H01L2224/48091 , H01L2924/00014
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19.COLOR AND NON-VISIBLE LIGHT E.G. IR SENSOR, NAMELY A MULTISPECTRAL SENSOR 有权
标题翻译: MULTISPEKTRALSENSOR公开(公告)号:EP2803090A2
公开(公告)日:2014-11-19
申请号:EP13700113.7
申请日:2013-01-10
IPC分类号: H01L27/146 , G01J3/28 , H01L31/103
CPC分类号: H01L27/14645 , G01J2003/2826 , G01S7/4914 , G01S17/89 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14643
摘要: The present invention relates to a color and non-visible light e.g. IR sensor, namely a multispectral sensor which can be used in a camera such as a TOF camera for depth measurement, reflectance measurement and color measurement, and for generation of 3D image data or 3D images as well as the camera itself and methods of operating the same.
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20.STRUCTURE SEMICONDUCTRICE, DISPOSITIF COMPORTANT UNE TELLE STRUCTURE ET PROCEDE DE FABRICATION D'UNE STRUCTURE SEMICONDUCTRICE 有权
标题翻译: 半导体结构,该半导体结构和方法半导体结构的器件公开(公告)号:EP2801117A2
公开(公告)日:2014-11-12
申请号:EP13700059.2
申请日:2013-01-02
IPC分类号: H01L31/09 , H01L31/103 , H01L31/18
CPC分类号: H01L31/035272 , H01L31/02966 , H01L31/101 , H01L31/18 , H01L31/1832 , Y02E10/50
摘要: The invention relates to a semiconductor structure (5) capable of receiving electromagnetic radiation (λ) and converting same into an electrical signal comprising first and second areas (20, 60) having the same type of conductivity and consisting of the same elements. The structure further comprises a barrier area (40), which is arranged between the first area and the second area (20, 60) and which is to be used as a barrier to the majority carriers of the first and second areas (20, 60) over a barrier thickness, the smallest band gap width of the barrier area (40) defining a barrier proportion. The structure (5) comprises a first interface area (30) arranged so as to form an interface between the first area (20) and the barrier area (40) over a first interface thickness, the composition of elements of the first interface area varying by a proportion corresponding to that of the first material to the barrier proportion, the first interface thickness being at least equal to half of the barrier thickness.
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