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    METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE
    23.
    发明公开
    METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE 有权
    GAN-HALBLEITERVERBUNDKRISTALL-WACHSMETHODE UND HALBLEITERSUBSTRAT

    公开(公告)号：EP1178523A1

    公开(公告)日：2002-02-06

    申请号：EP00909774.2

    申请日：2000-03-21

    申请人： Mitsubishi Cable Industries, Ltd.

    发明人： OUCHI, Yoichiro ,  OKAGAWA, Hiroaki ,  KOTO, Masahiro ,  TADATOMO, Kazuyuki

    IPC分类号： H01L21/205

    CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0075

    摘要： The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.

    摘要翻译： 用抗表面活性剂材料改性基板11或形成在基板11上的GaN族化合物半导体膜12的表面的状态，并通过气相生长法提供GaN族化合物半导体材料，以形成点状结构 的半导体膜12的表面上的GaN族化合物半导体，并且继续生长直到点结构连接并且表面变平坦。 在这种情况下，点状结构在抗表面活性剂区域上形成空腔21时连接。 从底层延伸的位错线22被空腔21阻挡，因此可以减小外延膜表面的位错密度。 结果，可以在外延生长中不使用掩模材料来降低GaN族化合物半导体晶体的位错密度，由此可以获得高质量的外延膜。