公开(公告)号：EP1029109A1

公开(公告)日：2000-08-23

申请号：EP98957469.4

申请日：1998-11-02

申请人： ASM America, Inc.

发明人： WENGERT, John, F. ,  RAAIJMAKERS, Ivo ,  HALPIN, Mike ,  JACOBS, Loren ,  MEYER, Michael, J. ,  VAN BILSEN, Frank ,  GOODMAN, Matt ,  BARRETT, Eric ,  WOOD, Eric ,  SAMUELS, Blake

IPC分类号： C23C16/44 ,  G01K1/12 ,  C23C16/48

CPC分类号： H01L21/67115 ,  C23C16/4401 ,  C23C16/481 ,  G01K1/12 ,  G01K7/04

摘要： A generally horizontally-oriented quartz CVD chamber (10) is disclosed with front and rear chamber divider plates (16, 18) adjacent a centrally positioned susceptor (20) and surrounding temperature control ring (22) which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate (30) for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber. Also, thermocouples (34) adjacent the susceptor are provided with SiC sheaths to enable the thermocouples to withstand more process cycles than that of quartz sheaths. SiC shields may be provided on quartz components throughout the chamber to protect the quartz from devitrification. Throughput is improved by both reducing down time and reducing the cleaning step time of the process cycle.

公开(公告)号：EP0963459A2

公开(公告)日：1999-12-15

申请号：EP98903702.0

申请日：1998-01-23

申请人： ASM America, Inc.

发明人： FOSTER, Derrick, W. ,  VYNE, Robert, M. ,  WENGERT, John, F. ,  VAN DER JEUGD, Cornelius, A. ,  JACOBS, Loren, R. ,  VAN BILSEN, Frank, B., M. ,  GOODMAN, Matthew ,  HARTMANN, Glenn ,  LAYTON, Jason, M. ,  HALPIN, Michael, W. ,  HAWKINS, Mark, R.

IPC分类号： C23C16 ,  A21B2 ,  B24B7 ,  C23C14 ,  C23F1 ,  C30B31 ,  H01L21 ,  H01L23

CPC分类号： C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer support system comprising a segmented susceptor (602) having top and bottom sections and gas flow passages therethrough. A plurality of spacers or a spacer (615) projecting from a recess (604) formed in the top section (608) of the susceptor support a wafer (648) in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section (618) of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

公开(公告)号：EP2304402B1

公开(公告)日：2019-11-06

申请号：EP09767208.3

申请日：2009-05-11

申请人： ASM America, Inc.

发明人： YEDNAK, Andy, Michael

IPC分类号： G01K7/18 ,  H01L21/66 ,  G01K7/04 ,  G01K13/00

公开(公告)号：EP2050125B1

公开(公告)日：2017-12-20

申请号：EP07799093.5

申请日：2007-06-27

申请人： ASM America, Inc. ,  Soitec

发明人： CODY, Nyles, W. ,  FIGUET, Christophe ,  KENNARD, Mark

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532

公开(公告)号：EP2304402A1

公开(公告)日：2011-04-06

申请号：EP09767208.3

申请日：2009-05-11

申请人： ASM America, Inc.

发明人： YEDNAK, Andy, Michael

IPC分类号： G01K7/18 ,  H01L21/66

摘要： A thermocouple for use in a semiconductor processing reactor is described. The thermocouple includes a sheath having a measuring tip at one end and an opening at the other end. A support member having bores formed along the length is disposed within the sheath. A pair of wires formed of dissimilar metals are disposed within the bores, and one end of the wires is fused together to form a junction. The wires extend along the length of the bores. As the wires exit the bore, they are spatially or physically separated to prevent a short circuit therebetween. The ends of the wires exiting the bore are also free to thermally expand in the longitudinal manner, thereby reducing or eliminating the potential for the wires to fail due to grain slip.

摘要翻译： 描述了用于半导体处理反应器的热电偶。 热电偶包括在一端具有测量尖端并且在另一端具有开口的护套。 具有沿长度形成的孔的支撑构件设置在护套内。 由不同金属形成的一对线材设置在孔内，并且电线的一端熔合在一起以形成结。 电线沿着孔的长度延伸。 当导线离开孔时，它们在空间上或物理上分开以防止它们之间的短路。 离开孔的线的端部也可以以纵向方式自由地热膨胀，从而减少或消除由于谷物滑动导致电线失效的可能性。

公开(公告)号：EP2185745A2

公开(公告)日：2010-05-19

申请号：EP08798519.8

申请日：2008-08-22

申请人： ASM America, Inc.

发明人： HALPIN, Mike ,  GOODMAN, Matt

IPC分类号： C23C14/54 ,  G01K1/08 ,  G01K7/02 ,  H01L21/20

CPC分类号： G01K7/04 ,  G05D23/1931 ,  G05D23/22

摘要： A thermocouple for measuring temperature at a position adjacent to a substrate being processed in a chemical vapor deposition reactor is provided. The thermocouple includes a sheath having a measuring tip. The thermocouple also includes a support tube disposed within the sheath. The thermocouple further includes first and second wires supported by the support tube. The first and second wires are formed of different metals. A junction is formed between the first and second wires, wherein the junction is located adjacent to a distal end of the support tube. A spring is disposed about a portion of the support tube. The spring is compressed to exert a spring force on the support tube to bias the junction against the measuring tip to maintain the junction in continuous contact with the measuring tip. The spring force is small enough to prevent significant deformation of the junction as well as reducing variation of spring force or junction location from one thermocouple to another.

摘要翻译： 提供了一种用于测量在化学气相沉积反应器中正在处理的衬底附近的位置处的温度的热电偶。 热电偶包括具有测量尖端的护套。 热电偶还包括设置在护套内的支撑管。 热电偶还包括由支撑管支撑的第一和第二导线。 第一和第二导线由不同的金属形成。 在第一和第二线之间形成接合部，其中接合部位于支撑管的远端附近。 弹簧围绕支撑管的一部分布置。 弹簧被压缩以在支撑管上施加弹簧力，以将连接部分偏压到测量尖端，从而保持连接部分与测量尖端持续接触。 弹簧力足够小，以防止连接处发生明显变形，并减少弹簧力或从一个热电偶到另一个热电偶的连接位置的变化。

公开(公告)号：EP2156155A1

公开(公告)日：2010-02-24

申请号：EP08755721.1

申请日：2008-05-16

申请人： ASM America, Inc.

发明人： JACOBS, Loren ,  HALPIN, Mike

IPC分类号： G01K1/08 ,  G01K7/02 ,  G01K7/04

CPC分类号： G01K1/08 ,  G01K7/02 ,  G01K7/04

摘要： A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube.

公开(公告)号：EP1876640A2

公开(公告)日：2008-01-09

申请号：EP07019695.1

申请日：1999-05-20

申请人： ASM America, Inc.

发明人： Stevens, Ronald R. ,  Aggarwal, Ravinder

IPC分类号： H01L21/673

CPC分类号： H01L21/67346 ,  H01L21/67253 ,  H01L21/67353 ,  H01L21/67379 ,  Y10S414/137 ,  Y10S414/14

摘要： A stackable cassette (21) for testing at least one separate wafer during the processing of a plurality of semiconductor wafers is disclosed. The stackable cassette (21) includes a bottom surface (25) which conforms to a top surface (3) of a base cassette (1) having a plurality of wafers. In addition, the stackable cassette (21) includes two or more supports (27) which extend vertically from the bottom surface (25) and a top surface (23) horizontally connected to the two supports (27). The supports include ribs (31) which form channels for holding at least one wafer. When processing the plurality of wafers, the stackable cassette (21) is placed on top of a base cassette (1). A specified processed wafer is placed within the stackable cassette (21). The stackable cassette (21) is then removed for inspection of the test wafer.

摘要翻译： 公开了一种用于在多个半导体晶片的处理期间测试至少一个单独晶片的可堆叠盒（21）。 可堆叠盒（21）包括与具有多个晶片的基座（1）的顶表面（3）相符合的底表面（25）。 此外，可堆叠盒（21）包括从底表面（25）垂直延伸的两个或更多个支撑件（27）和与两个支撑件（27）水平连接的顶表面（23）。 支撑件包括形成用于保持至少一个晶片的通道的肋（31）。 当处理多个晶片时，可堆叠盒（21）被放置在基盒（1）的顶部。 将指定的加工晶片放置在可堆叠盒（21）内。 然后取出可堆叠盒（21）以检查测试晶片。

公开(公告)号：EP1866465A2

公开(公告)日：2007-12-19

申请号：EP06718678.3

申请日：2006-01-17

申请人： ASM America, Inc.

发明人： VERGHESE, Mohith ,  SHERO, Eric ,  BABIC, Darko ,  TERHORST, Herbert ,  PEUSSA, Marko ,  YAN, Min

IPC分类号： C30B25/14 ,  C23C16/455

CPC分类号： H01L21/68785 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/45517 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45582 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4586 ,  C30B35/00 ,  H01L21/67236 ,  H01L21/68714 ,  H01L21/68742

摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

公开(公告)号：EP1374291B1

公开(公告)日：2007-11-21

申请号：EP02721028.5

申请日：2002-02-12

申请人： ASM America, Inc.

发明人： TODD, Michael, A.

IPC分类号： H01L21/205

CPC分类号： C23C16/0272 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/22 ,  C23C16/24 ,  C23C16/30 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/56 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/2257 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/28194 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/3185 ,  H01L21/32055 ,  H01L28/84 ,  H01L29/127 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66181 ,  H01L29/66242 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/933

摘要： Trisilane is used in chemical vapor deposition methods to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. An example is in forming the base region of a heterojunction bipolar transistor, including simultaneous deposition over both single crystal semiconductor surfaces and amorphous insulating regions.

摘要翻译： 硅化合物和掺杂硅膜通过化学气相沉积和离子注入工艺制备，使用含Si化学前体作为第III族和第V族原子的来源。 优选的掺杂剂前体包括（H3Si）3-xMRx，（H3Si）3N和（H3Si）4N2，其中R是H或D，x = 0,1或2，并且M选自B，P， As和Sb。 优选的沉积方法产生非氢化硅合金和掺杂的含Si膜，包括晶体膜。