公开(公告)号：EP1633007A2

公开(公告)日：2006-03-08

申请号：EP05077020.5

申请日：2005-09-05

申请人： ANELVA CORPORATION ,  National Institute of Advanced Industrial Science and Technology

发明人： Djayaprawira, David D ,  Tsunekawa, Koji ,  Nagai, Motonobu ,  Maehara, Hiroki ,  Yamagata, Shinji, c/o A207 Anelva Musashinodai-ryo ,  Watanabe, Naoki ,  Yuasa, Shinji

IPC分类号： H01L43/08 ,  H01L43/12 ,  H01F41/30

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/081 ,  C23C14/34 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F41/18 ,  H01F41/307 ,  H01L43/08

摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a single crystal structure.

公开(公告)号：EP1526588A1

公开(公告)日：2005-04-27

申请号：EP03766709.4

申请日：2003-08-01

申请人： Sony Corporation

发明人： OBA, Kazuhiro, c/o Sony Corporation ,  KANO, Hiroshi, c/o Sony Corporation ,  HOSOMI, Masanori, c/o Sony Corporation ,  BESSHO, Kazuhiro, c/o Sony Corporation ,  YAMAMOTO, Tetsuya, c/o Sony Corporation ,  MIZUGUCHI, Tetsuya, c/o Sony Corporation

IPC分类号： H01L43/08 ,  H01L27/105 ,  G11B5/39 ,  G01R33/09 ,  H01F10/13 ,  H01F10/32

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3277 ,  H01L43/10

摘要： A magnetoresistive effect element may be given satisfactory magnetic characteristics because a deterioration of a magnetoresistive changing rate by annealing can be suppressed and a magnetic memory device includes this magnetoresistive effect element to provide excellent write characteristics.
A magnetoresistive effect element has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to cause an electric current to flow in the direction perpendicular to the layer surface to obtain a magnetoresistive change. A magnetic memory device comprises the magnetoresistive effect element 1 in which at least one of the pair of ferromagnetic layers 5, 7 contains an amorphous ferromagnetic material whose crystallization temperature is higher than 623k and bit lines and word lines sandwiching this magnetoresistive effect element and the magnetoresistive effect element in the thickness direction.

公开(公告)号：EP1494295A1

公开(公告)日：2005-01-05

申请号：EP03745971.6

申请日：2003-04-08

申请人： Sony Corporation

发明人： HOSOMI, Masanori, Sony Corporation ,  MIZUGUCHI, Tetsuya, Sony Corporation ,  OHBA, Kazuhiro, Sony Corporation ,  BESSHO, Kazuhiro, Sony Corporation ,  YAMAMOTO, Tetsuya, Sony Corporation ,  KANO, Hiroshi, Sony Corporation

IPC分类号： H01L43/08 ,  G01R33/09 ,  G11B5/39 ,  H01L27/105

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228 ,  H01L43/10

摘要： Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magnetoresistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain Fe a Co b Ni c B d (in the chemical formula, a, b, c and d represent atomic %. 5 ≦ a ≦ 45, 35 ≦ b ≦ 85, 0

公开(公告)号：EP1438722A1

公开(公告)日：2004-07-21

申请号：EP02785509.7

申请日：2002-09-19

申请人： CENTRE NATIONAL DELA RECHERCHE SCIENTIFIQUE (CNRS)

发明人： NOZIERES, Jean-Pierre ,  RANNO, Laurent ,  CONRAUX, Yann

IPC分类号： G11C11/16 ,  H01F10/32

CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3268

摘要： The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.

公开(公告)号：EP1061592A2

公开(公告)日：2000-12-20

申请号：EP00112886.7

申请日：2000-06-19

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Odagawa, Akihiro ,  Sakakima, Hiroshi ,  Hiramoto, Masayoshi ,  Matsukawa, Nozomu

IPC分类号： H01L43/08 ,  H01F10/32 ,  G11C11/16

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/16 ,  G11C11/5607 ,  G11C2211/5615 ,  G11C2211/5616 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L27/222 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/26 ,  Y10T428/265 ,  Y10T428/32

摘要： A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.

公开(公告)号：EP0786763A1

公开(公告)日：1997-07-30

申请号：EP97101124.2

申请日：1997-01-24

申请人： SONY CORPORATION

发明人： Tokutake, Fusashige ,  Honda, Junichi ,  Inoue, Yoshihiko

IPC分类号： G11B5/187

CPC分类号： B82Y25/00 ,  G11B5/1878 ,  H01F10/147 ,  H01F10/3204 ,  Y10S428/90 ,  Y10T428/1129 ,  Y10T428/12465 ,  Y10T428/12542 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/12653 ,  Y10T428/12875 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12931 ,  Y10T428/26 ,  Y10T428/265

摘要： A magnetic head having a laminated magnetic film in which crystal orientation of precipitated small crystal particles can be controlled and the soft magnetic characteristic in the thickness of the laminated magnetic film can easily be controlled. The magnetic head has the laminated magnetic film formed by laminating thin magnetic layers, each having a composition as Fe x M y N z , and metal layers. The laminated magnetic film is subjected to heat treatment so that metal atoms forming the metal layers are diffused into the thin magnetic films. Thus, the laminated magnetic film contains small crystal particles of αFe, the direction of crystal of which is controlled by the diffused metal atoms. Therefore, the laminated magnetic film has an excellent soft magnetic characteristic also in the direction of the thickness thereof.

摘要翻译： 一种具有叠层磁性膜的磁头，其中可以控制析出的小晶粒的晶体取向，并且可以容易地控制叠层磁性膜的厚度中的软磁特性。 磁头具有通过层压各自具有FexMyNz组成的薄磁层形成的层压磁性膜和金属层。 对叠层磁性膜进行热处理，使形成金属层的金属原子扩散到薄磁性膜中。 因此，叠层磁性膜含有小的αFe晶体粒子，其晶体方向受扩散的金属原子控制。 因此，叠层磁性膜在其厚度方向上也具有优异的软磁特性。

公开(公告)号：EP0447793A3

公开(公告)日：1991-12-18

申请号：EP91102051.9

申请日：1991-02-14

申请人： VACUUMSCHMELZE GMBH

发明人： Emmerich, Kurt, Dr. ,  Roth, Ottmar

IPC分类号： G08B13/24

CPC分类号： B82Y25/00 ,  G08B13/2411 ,  G08B13/2442 ,  H01F1/15308 ,  H01F10/3204

摘要： Es sind deaktivierbare Sicherungsetiketten für Diebstahlsicherungssysteme bekannt, bei denen ein Streifen aus einem weichmagnetischen Material mit hoher Permeabilität und niedriger Koerzitivfeldstärke mit einem Streifen höherer Koerzitivfeldstärke zu einem Laminat kombiniert wird. Die Deaktivierung erfolgt hierbei durch Aufmagnetisieren des Streifens höherer Koerzitivfeldstärke. Durch einen Streifen mit höherer Koerzitivfeldstärke aus einer durch Rascherstarrung mit einer Abkühlgeschwindigkeit von mehr als 10³ K/s hergestellten duktilen Eisen-Chrom-Kobalt-Basislegierung, deren mittlere Korngröße weniger als 30 µm beträgt und deren Gefüge praktisch frei von gamma und/oder sigma-Phasenausscheidungen ist, wird insbesondere in Verbindung mit einem hochduktilen amorphen weichmagnetischen Streifen ein gegen mechanische Beanspruchung weitgehend unempfindliches Sicherungsetikett erhalten.

公开(公告)号：EP0447793A2

公开(公告)日：1991-09-25

申请号：EP91102051.9

申请日：1991-02-14

申请人： VACUUMSCHMELZE GMBH

发明人： Emmerich, Kurt, Dr. ,  Roth, Ottmar

IPC分类号： G08B13/24

CPC分类号： B82Y25/00 ,  G08B13/2411 ,  G08B13/2442 ,  H01F1/15308 ,  H01F10/3204

摘要： Es sind deaktivierbare Sicherungsetiketten für Diebstahlsicherungssysteme bekannt, bei denen ein Streifen aus einem weichmagnetischen Material mit hoher Permeabilität und niedriger Koerzitivfeldstärke mit einem Streifen höherer Koerzitivfeldstärke zu einem Laminat kombiniert wird. Die Deaktivierung erfolgt hierbei durch Aufmagnetisieren des Streifens höherer Koerzitivfeldstärke. Durch einen Streifen mit höherer Koerzitivfeldstärke aus einer durch Rascherstarrung mit einer Abkühlgeschwindigkeit von mehr als 10³ K/s hergestellten duktilen Eisen-Chrom-Kobalt-Basislegierung, deren mittlere Korngröße weniger als 30 µm beträgt und deren Gefüge praktisch frei von gamma und/oder sigma-Phasenausscheidungen ist, wird insbesondere in Verbindung mit einem hochduktilen amorphen weichmagnetischen Streifen ein gegen mechanische Beanspruchung weitgehend unempfindliches Sicherungsetikett erhalten.

摘要翻译： 能够停用的安全标签对于盗窃安全系统是已知的，其中由具有高磁导率和低矫顽力的软磁材料制成的带与较高矫顽力的条带组合以形成层压体。 在这种情况下，通过磁化具有较高矫顽力的条来进行去激活。 根据本发明的具有较高矫顽力并由球铁/铬/钴基合金制成的钢带，其以大于10 3 K / s的冷却速度快速固化，合金的平均粒度为 小于30微米，其结构基本上没有γ和/或σ相析出物，导致安全标签对机械应力大部分不敏感，特别是与高度延性的非晶软磁条相结合时。

公开(公告)号：EP1973178A2

公开(公告)日：2008-09-24

申请号：EP08159511.8

申请日：2005-09-05

申请人： Canon Anelva Corporation ,  National Institute of Advanced Industrial Science and Technology

发明人： Djayaprawira, David D ,  Tsunekawa, Koji ,  Nagai, Motonobu ,  Maehara, Hiroki ,  Yamagata, Shinji ,  Watanabe, Naoki ,  Yuasa, Shinji

IPC分类号： H01L43/08 ,  H01L43/12 ,  H01F41/30 ,  H01F10/32

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/081 ,  C23C14/34 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F41/18 ,  H01F41/307 ,  H01L43/08

摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a single crystal structure.

摘要翻译： 一种磁阻效应器件（10），包括具有一对铁磁层和位于它们之间的阻挡层的多层结构（12），其中至少一个铁磁层至少具有与形成无定形的阻挡层接触的部分和阻挡层 具有单晶结构的MgO层。

公开(公告)号：EP1430484B1

公开(公告)日：2007-11-14

申请号：EP02798773.4

申请日：2002-09-19

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)

发明人： NOZIERES, Jean-Pierre ,  RANNO, Laurent ,  CONRAUX, Yann

IPC分类号： G11C11/16 ,  H01F10/32 ,  H01F10/12

CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/226

摘要： The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction ( 60 ), comprising: a magnetic layer, called trapped layer ( 61 ), whereof the magnetization is rigid; a magnetic layer, called free layer ( 63 ), whereof the magnetization may be inverse; and insulating layer ( 62 ), interposed between the free layer ( 73 ) and the trapped layer ( 71 ) and respectively in contact with said two layers. The free layer ( 63 ) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.