利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

433 条记录 (耗时 0.012 秒)

    APPARATUS FOR PLASMA PROCESSING
    31.
    发明公开
    APPARATUS FOR PLASMA PROCESSING 有权
    VORRICHTUNG ZUR PLASMAVERARBEITUNG

    公开(公告)号：EP1276356A4

    公开(公告)日：2006-01-04

    申请号：EP01901433

    申请日：2001-01-18

    申请人： TOKYO ELECTRON LTD ,  ANDO MAKOTO ,  YASAKA YASUYOSHI

    发明人： YASAKA YASUYOSHI ,  ISHII NOBUO ,  SHINOHARA KIBATSU

    IPC分类号： H01J37/32 ,  H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01L21/3065

    摘要： A plasma device for uniform processing of large-size wafers. The device comprises a processing container (4) that is a bottomed cylinder with an upper opening covered with a quartz plate (8), the cylinder including a processing stage (10) for holding a wafer (W); a microwave device (50) for supplying TE11-mode microwave; a cylindrical waveguide (52) including a waveguide space, connected with the microwave device (50) on one end, and extending toward the quartz plate (8); a radial waveguide box (54) including a waveguide space, connected with the other end of the waveguide (52), spreading radially outward in the shape of a flange, and falling toward the quartz board (8) to serve as a side wall; and a disk-like slot antenna (60) arranged along the quartz board (8) to cover a lower opening of the waveguide box (54). A circular polarization converter (56) can be provided to rotate microwave on the axis of the cylindrical waveguide (52) and send it to the waveguide box (54).

    摘要翻译： 一种等离子体处理装置，其产生均匀的等离子体，从而允许大直径晶片的均匀处理。 圆筒形装置包括晶片安装台，提供密封的石英板，用于以TE11模式传播微波的微波供应器，以及一端连接到微波供应器的圆柱形波导。 径向波导盒连接在圆柱形波导的另一端和石英板之间。 径向波导盒从圆柱形波导径向向外延伸，形成凸缘并限定内部波导空间。 盘状槽天线位于放射状波导箱的下端，位于石英板上方。 设置在圆筒形波导管中的圆偏振波转换器围绕圆柱形波导的轴线旋转TE11模式微波，并将旋转的微波发送到径向波导盒。

    DEVICE AND METHOD FOR PLASMA PROCESSING
    33.
    发明公开
    DEVICE AND METHOD FOR PLASMA PROCESSING 审中-公开
    VORRICHTUNG VERFAHREN ZUR PLASMABEARBEITUNG

    公开(公告)号：EP1100115A4

    公开(公告)日：2004-09-15

    申请号：EP99957661

    申请日：1999-06-28

    申请人： TOKYO ELECTRON LTD

    发明人： AMANO HIDEAKI

    IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

    CPC分类号： H01L21/6719 ,  H01J37/32229 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32899 ,  H05H2001/4622

    摘要： A vacuum processing chamber (31) in a plasma processing unit (3A, 3B) is connected to a transfer chamber (2) and a wafer (W) is transferred from the transfer chamber (2) with the wafer aligned with a mount (4) in the vacuum processing chamber (31). The size and length of a waveguide (5) are the same for each plasma processing unit (3A, 3B) and a positional relation of the waveguide (5) with respect to transfer directions (M1, M2) of a transfer arm (61) is the same for each plasma processing unit (3A, 3B). Therefore, a positional relation of the waveguide (5) with respect to the wafer (W) placed on the mount (4) in a preset direction is the same for each plasma processing unit (3A, 3B).

    摘要翻译： 等离子处理单元3A和3B的真空处理室31连接到传送室2，并且处于定位状态的晶片W从传送室2传送到真空处理室31中的安装台4.体积和 波导5的长度在等离子体处理单元3A和3B之间是相同的。 波导5与传送臂61的传送方向M1和M2的位置关系在等离子体处理单元3A和3B之间是相同的。 结果，波导5与安装在安装台4上的晶片W的预定方向的位置关系在等离子体处理单元3A和3B之间是相同的。

    Laser-induced plasma micromachining
    35.
    发明公开
    Laser-induced plasma micromachining 有权
    Mikrobearbeitung durch Laserinduziertes等离子体

    公开(公告)号：EP1430987A1

    公开(公告)日：2004-06-23

    申请号：EP03026596.1

    申请日：2003-11-19

    申请人： Caterpillar Inc.

    发明人： Groen, Cale E. ,  Koch, Justin Lee ,  White, William E.

    IPC分类号： B23K26/36 ,  C23F4/00 ,  F02M61/18 ,  B23K26/18 ,  B23K26/14 ,  B23K26/38 ,  B23K26/12

    CPC分类号： F02M61/168 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/123 ,  B23K26/18 ,  B23K26/361 ,  B23K26/389 ,  C23F4/00

    摘要： A method and system (100, 200) for laser ablating a target material (13, 350, 360) in an ambient atmosphere are disclosed. The method includes generating one or more laser pulses, each of the laser pulses having a pulse width of 1 picosecond (ps) or less and a pulse energy of 100 micro joules (µJ) or more. The laser pulses are directed towards the target material (13, 350, 360) such that the laser pulses interact with a gas to form a plasma (30). The plasma removes a portion of the target material by interaction of the plasma (30) with the target material (360).

    摘要翻译： 公开了一种用于在环境气氛中激光烧蚀目标材料（13,350,360）的方法和系统（100,200）。 该方法包括产生一个或多个激光脉冲，每个激光脉冲具有1皮秒（ps）或更小的脉冲宽度和100微焦耳（μJ）或更大的脉冲能量。 激光脉冲被引向目标材料（13,350,360），使得激光脉冲与气体相互作用以形成等离子体（30）。 等离子体通过等离子体（30）与目标材料（360）的相互作用来除去目标材料的一部分。

    PLASMA TREATING DEVICE
    37.
    发明公开
    PLASMA TREATING DEVICE 失效
    PLASMA-阿帕拉特

    公开(公告)号：EP1094505A4

    公开(公告)日：2001-10-24

    申请号：EP97913415

    申请日：1997-11-20

    申请人： TOKYO ELECTRON LTD

    发明人： ISHIZUKA SHUICHI ,  AOKI TAKESHI

    IPC分类号： H01L21/31 ,  H01J37/32 ,  C23C16/50 ,  C23F4/00 ,  H01L21/205 ,  H01L21/3065 ,  H05H1/46

    CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32284

    摘要： A plasma treating device which can generate uniform plasma over a wide area and can perform plasma treatment on a substrate (wafer W) to be treated with high in-plane uniformity. A transmissive window (23) for transmitting microwaves is provided in the ceiling section of a vacuum vessel (2) provided with a plasma chamber (21) and a film forming chamber (22) and a waveguide (4) for supplying microwaves of 2.45 GHz in frequency to the vacuum vessel (2) in a TM mode is provided on the window (23). The waveguide (4) is composed of a rectangular waveguide (41), a cylindrical waveguide (42) which works as a TM mode converter (42), and a conical waveguide (43) and the exit side of the waveguide (43) is connected to the upper surface of the window (23). When the microwaves are transmitted into the vessel (2) in the TM mode and, at the same time, a magnetic field is formed in the vessel (2) and the exit-side inside diameter ØA of the waveguide (43) is adjusted to 130-160 mm, the density of plasma in the plasma chamber (1) becomes uniform and plasma treatment can be performed on a wafer W having a size of, for example, 8 inches with high in-plane uniformity.

    摘要翻译： 本发明提供一种等离子体处理装置，其能够在广阔的范围内生成均匀的等离子体，并且能够对面内均匀性高的被处理基板（晶圆W）进行等离子体处理。 在设置有等离子体室（21）和成膜室（22）的真空容器（2）的顶部中设置用于传输微波的透射窗（23），该透射窗（23）提供2.45GHz的微波 在窗口（23）上以TM模式向真空容器（2）施加频率。 波导（4）由矩形波导（41），作为TM模式转换器（42）的圆柱形波导（42）和圆锥形波导（43）构成，波导（43）的出射侧是 连接到窗口（23）的上表面。 当以TM模式将微波传送到容器（2）中时，同时在容器（2）中形成磁场，并且将波导（43）的出口侧内径ØA调整为 130-160mm，等离子体室（1）中的等离子体的密度变得均匀，并且可以在尺寸例如为8英寸的晶片W上进行等离子体处理，并且具有高的面内均匀性。

    Distribution plate for a reaction chamber
    39.
    发明公开
    Distribution plate for a reaction chamber 失效
    分配板用于反应室

    公开(公告)号：EP0844314A3

    公开(公告)日：2001-04-11

    申请号：EP97309500.3

    申请日：1997-11-25

    申请人： SIEMENS AKTIENGESELLSCHAFT ,  International Business Machines Corporation

    发明人： Roithner, Klaus ,  Poschenrieder, Bernhard ,  Muller, Karl Paul

    IPC分类号： C23F4/00 ,  H01L21/00 ,  C23C16/455

    CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45561

    摘要： The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone. The mass flow controllers are utilized to ensure a uniform rate of chemical vapor deposition or etching across the surface of the substrate.

    A plasma etching control device
    40.
    发明公开
    A plasma etching control device 审中-公开
    等离子蚀刻控制装置

    公开(公告)号：EP1009014A3

    公开(公告)日：2001-03-28

    申请号：EP99309839.1

    申请日：1999-12-03

    申请人： Orbis Technologies Ltd.

    发明人： Huggett, Paul Gideon ,  Boyd, Matthew Stuart

    IPC分类号： H01J37/32 ,  C23F4/00

    CPC分类号： H01J37/32935 ,  H01J2237/334 ,  H01J2237/3382

    摘要： An end point controller (12) and an interface unit (17) therefor, for use in an anisotropic plasma etching process comprising a series of alternating etching and polymerization steps, the controller (12) having a monitor (13) for monitoring the intensity of a characteristic process parameter, typically an optical emission, and producing a signal indicative of said intensity, the unit (17) or controller (16) having a timer assembly determining the operation of the monitor (13) during each etching step, the assembly comprising at least two sequential timers (100)(105), the first timer (100) determining a time lag (tl) between the onset of the etching step and the operation of the second timer (105) which sets a time period (t2) within the etching step for monitoring the selected parameter.

    摘要翻译： 一种用于包括一系列交替蚀刻和聚合步骤的各向异性等离子体蚀刻工艺的终点控制器（12）和接口单元（17），控制器（12）具有监测器（13），用于监测 （17）或控制器（16）具有定时器组件，该定时器组件确定在每个蚀刻步骤期间监视器（13）的操作，该组件包括： 至少两个连续定时器（100）（105），第一定时器（100）确定蚀刻步骤开始与设定时间段（t2）的第二定时器（105）的操作之间的时滞（t1） 在用于监测所选参数的蚀刻步骤内。