中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

94 records (took 0.012 seconds)

    Passive thermal isolation structure
    41.
    发明公开
    Passive thermal isolation structure 审中-公开
    被动Wärmeisolationsstruktur

    公开(公告)号：EP1829819A2

    公开(公告)日：2007-09-05

    申请号：EP06125198.9

    申请日：2006-12-01

    Applicant: Honeywell International Inc.

    Inventor： Younger, Dan W. ,  Lust, Lisa M

    IPC: B81B7/00

    CPC classification number: B81B7/0087 ,  B81B2201/032 ,  F28F13/00 ,  F28F2270/00 ,  G05D23/024

    Abstract: A thermal isolation structure for use in passively regulating the temperature of a microdevice is disclosed. The thermal isolation structure can include a substrate wafer and a cap wafer defining an interior cavity, and a number of double-ended or single-ended thermal bimorphs coupled to the substrate wafer and thermally actustable between an initial position and a deformed position. The thermal bimorphs can be configured to deform and make contact with the cap wafer at different temperatures, creating various thermal shorts depending on the temperature of the substrate wafer. When attached to a microdevice such as a MEMS device, the thermal isolation structure can be configured to maintain the attached device at a constant temperature or within a particular temperature range.

    Abstract translation: 公开了一种用于被动调节微型设备的温度的隔热结构。 热隔离结构可以包括衬底晶片和限定内腔的帽晶片，以及耦合到衬底晶片并且在初始位置和变形位置之间可发热的多个双端或单端热双压电晶片。 热双晶体可以被配置成在不同的温度下变形并与盖晶片接触，根据衬底晶片的温度产生各种热短路。 当连接到诸如MEMS器件的微器件时，热隔离结构可以被配置为将连接的器件保持在恒定温度或特定温度范围内。

    Piezoresistive sensing structure
    43.
    发明公开
    Piezoresistive sensing structure 有权
    压阻传感器

    公开(公告)号：EP1721865A2

    公开(公告)日：2006-11-15

    申请号：EP06075963.6

    申请日：2006-04-28

    Applicant: Delphi Technologies, Inc.

    Inventor： Rich, David B. ,  Crist, Steven M.

    IPC: B81B3/00

    CPC classification number: B81C1/00142 ,  B81B2201/0235 ,  B81B2201/032 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/016 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

    Abstract: A technique for manufacturing a piezoresistive sensing structure (170) includes a number of process steps. Initially, a piezoresistive element (108) is implanted into a first side of an assembly (102,106,104A) that includes a semiconductor material (102,104A). A passivation layer (110A) is then formed on the first side of the assembly (102,106,104A) over the element (108). The passivation layer (110A) is then removed from selected areas on the first side of the assembly (102,106,104A). A first mask is then provided on the passivation layer (110A) in a desired pattern. A beam (152), which includes the element (108), is then formed in the assembly over at least a portion of the assembly (102,106,104A) that is to provide a cavity (103). The passivation layer (110A) provides a second mask, in the formation of the beam (152), that determines a width of the formed beam (152).

    Abstract translation: 制造压阻感测结构（170）的技术包括多个工艺步骤。 最初，将压阻元件（108）注入包括半导体材料（102,104A）的组件（102,106,104A）的第一侧。 然后在元件（108）上方的组件（102,106,104A）的第一侧上形成钝化层（110A）。 然后从组件（102,106,104A）的第一侧上的选定区域去除钝化层（110A）。 然后以期望的图案在钝化层（110A）上提供第一掩模。 然后，包括元件（108）的梁（152）在组件中形成在组件（102,106,104A）的至少一部分上，以提供空腔（103）。 钝化层（110A）在确定所形成的光束（152）的宽度的波束（152）的形成中提供第二掩模。

    MICROMACHINED ELECTROSTATIC ACTUATOR WITH AIR GAP
    46.
    发明授权
    MICROMACHINED ELECTROSTATIC ACTUATOR WITH AIR GAP 有权
    具有空气隙的微观力学静电驱动器

    公开(公告)号：EP1183566B1

    公开(公告)日：2004-08-18

    申请号：EP00930822.2

    申请日：2000-05-19

    Applicant: MCNC

    Inventor： GOODWIN-JOHANSSON, Scott, Halden

    IPC: G02B26/02

    CPC classification number: B81C1/00666 ,  B81B2201/032 ,  B81B2203/0118 ,  B81C2201/0167 ,  G02B6/353 ,  G02B6/3566 ,  G02B6/357 ,  G02B6/3594 ,  H01H59/0009 ,  H01H2059/0081

    Abstract: A MEMS (Micro Electro Mechanical System) electrostatic device operated with lower and more predictable operating voltages is provided. An electrostatic actuator, an electrostatic attenuator of electromagnetic radiation, and a method for attenuating electromagnetic radiation are provided. Improved operating voltage characteristics are achieved by defining a non increasing air gap between the substrate electrode and flexible composite electrode within the electrostatic device. A medial portion of a multilayer flexible composite overlying the electromechanical substrate is held in position regardless of the application of electrostatic force, thereby sustaining the defined air gap. The air gap is relatively constant in separation from the underlying microelectronic surface when the medial portion is cantilevered in one embodiment. A further embodiment provides an air gap that decreases to zero when the medial portion approaches and contacts the underlying microelectronic surface. A moveable distal portion of the flexible composite is biased to curl naturally due to differences in thermal coefficients of expansion between the component layers. In response to electrostatic forces, the distal portion moves and thereby alters the distance separating the flexible composite from the underlaying microelectronic surface. Structures and techniques for controlling bias in the medial portion and the resulting air gap are provided. The electrostatic device may be disposed to selectively clear or intercept the path of electromagnetic radiation. Materials used in the attenuator can be selected to pass, reflect, or absorb various types of electromagnetic radiation. A plurality of electromagnetic attenuators may be disposed in an array and selectively activated in subsets.

    MEMS DEVICE AND METHOD OF FABRICATION
    49.
    发明授权
    MEMS DEVICE AND METHOD OF FABRICATION 有权
    MEMS器件和制造方法

    公开(公告)号：EP2504274B1

    公开(公告)日：2016-04-20

    申请号：EP10787532.0

    申请日：2010-11-22

    Applicant: BAE Systems PLC

    Inventor： ELEY, Rebecka ,  HUCKER, Martyn John ,  STURLAND, Ian Michael

    IPC: B81B3/00 ,  H01L41/09 ,  H01L41/22

    CPC classification number: H02N2/043 ,  B81B3/0021 ,  B81B2201/032 ,  B81B2203/0109 ,  H01L41/0933 ,  H01L41/22

    Abstract: A MEMS device, and method of fabrication thereof, comprising: a wall arranged as a closed loop(for example, comprising a plurality of interconnected lengths (11-18)); and a bridging portion (54) having two ends and an intermediate portion between these ends; the bridging portion (54) is connected at one end to a first portion of the wall and at the other end to a second portion of the wall non-contiguous to the first; whereby when the intermediate portion is displaced in a direction through a plane defined between the two ends, the portions of the wall connected to the bridging portion (54) are each displaced in a respective direction in the plane, and at least one further portion of the wall is displaced in a direction that is in the plane and that is different to the directions that the two portions connected to the bridging portion (54) are displaced in.

Patent Agency Ranking