公开(公告)号：EP2370346B1

公开(公告)日：2017-08-23

申请号：EP09805956.1

申请日：2009-11-25

Applicant: NXP USA, Inc. ,  COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Inventor： PERRUCHOT, François ,  DEFAY, Emmanuel ,  REY, Patrice ,  LIU, Lianjun ,  PACHECO, Sergio

IPC: B81B3/00 ,  H01L41/09

CPC classification number: B81B3/0072 ,  B81B2201/032 ,  H01L41/0933 ,  H01L41/094

公开(公告)号：EP3201121A1

公开(公告)日：2017-08-09

申请号：EP15771957.6

申请日：2015-09-30

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Université Grenoble Alpes

Inventor： CASSET, Fabrice ,  BASROUR, Skandar ,  CHAPPAZ, Cédrick ,  DANEL, Jean-Sébastien

IPC: B81B3/00 ,  H01L41/09 ,  H02N2/00

CPC classification number: B06B3/00 ,  B06B1/045 ,  B06B1/06 ,  B81B3/0021 ,  B81B3/0024 ,  B81B2201/032 ,  H01L41/094 ,  H01L41/18 ,  H01L41/25

Abstract: The invention relates to a mechanical structure comprising a stack containing an active substrate (10) and at least one actuator (20) suitable for generating vibrations in the region of said active substrate, said stack comprising a basic structure for the amplification of said vibrations (30), arranged between said actuator and said active substrate, the structure being used to transmit and amplify said vibrations; and comprising at least one trench (Ti) arranged between said actuator and said active substrate. The invention also relates to a method for producing said structure, comprising the use of a temporary substrate.

Abstract translation: 本发明涉及一种机械结构，该机械结构包括包含有源衬底（10）和适于在所述有源衬底的区域中产生振动的至少一个致动器（20）的叠层，所述叠层包括用于放大所述振动的基本结构 布置在所述致动器和所述有源衬底之间，所述结构用于传输和放大所述振动; 并且包括布置在所述致动器和所述有源衬底之间的至少一个沟槽（Ti）。 本发明还涉及一种用于制造所述结构的方法，包括使用临时衬底。

公开(公告)号：EP2370345B1

公开(公告)日：2017-07-05

申请号：EP09805955.3

申请日：2009-11-25

Applicant: NXP USA, Inc. ,  Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： LIU, Lianjun ,  PACHECO, Sergio ,  PERRUCHOT, François ,  DEFAY, Emmanuel ,  REY, Patrice

IPC: B81B3/00 ,  H01L41/09

CPC classification number: B81B3/0072 ,  B81B2201/032 ,  H01L41/0933 ,  H01L41/094

公开(公告)号：EP2833542A4

公开(公告)日：2015-12-30

申请号：EP13769062

申请日：2013-03-28

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： SUGINO TAKUSHI ,  ASAKA KINJI ,  TAKAHASHI ISAO ,  TAKATSUKA TOMOMASA ,  MITSUMORI KENICHI ,  HAGA NOBUAKI

IPC: H02N11/00 ,  B81B3/00 ,  C01B31/02 ,  C08K3/04 ,  C08K5/00 ,  C08L101/00

CPC classification number: H02N1/002 ,  B32B27/08 ,  B32B27/20 ,  B32B2262/106 ,  B32B2307/202 ,  B32B2457/00 ,  B81B3/0021 ,  B81B2201/032 ,  C08K3/041 ,  C08K3/044 ,  C08K3/046 ,  C08K5/315 ,  C08K5/3445 ,  C08K2201/011 ,  F03G7/005 ,  H01B1/24

Abstract: An object of this invention is to create an actuator in which the amount of deformation is maintained and no displacement in the reverse direction occurs, even when a constant voltage is continuously applied for a long period of time. As a means for achieving the above object, the invention provides a conductive thin film comprising a polymer gel containing at least one organic molecule selected from the group consisting of electron-donating organic molecules and electron-withdrawing organic molecules, a nano-carbon material, an ionic liquid, and a polymer.

公开(公告)号：EP2833542A8

公开(公告)日：2015-04-22

申请号：EP13769062.4

申请日：2013-03-28

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： SUGINO, Takushi ,  ASAKA, Kinji ,  TAKAHASHI, Isao ,  TAKATSUKA, Tomomasa ,  MITSUMORI, Kenichi ,  HAGA, Nobuaki

IPC: H02N11/00 ,  B81B3/00 ,  C01B31/02 ,  C08K3/04 ,  C08K5/00 ,  C08L101/00

CPC classification number: H02N1/002 ,  B32B27/08 ,  B32B27/20 ,  B32B2262/106 ,  B32B2307/202 ,  B32B2457/00 ,  B81B3/0021 ,  B81B2201/032 ,  C08K3/041 ,  C08K3/044 ,  C08K3/046 ,  C08K5/315 ,  C08K5/3445 ,  C08K2201/011 ,  F03G7/005 ,  H01B1/24

Abstract: An object of this invention is to create an actuator in which the amount of deformation is maintained and no displacement in the reverse direction occurs, even when a constant voltage is continuously applied for a long period of time.
As a means for achieving the above object, the invention provides a conductive thin film comprising a polymer gel containing at least one organic molecule selected from the group consisting of electron-donating organic molecules and electron-withdrawing organic molecules, a nano-carbon material, an ionic liquid, and a polymer.

公开(公告)号：EP2562837A4

公开(公告)日：2014-03-19

申请号：EP11771971

申请日：2011-04-18

Applicant: PANASONIC CORP

Inventor： OGAWA JUNYA ,  YAMAUCHI NORIHIRO ,  MATSUSHIMA TOMOAKI ,  AIZAWA KOICHI

IPC: H01L41/113 ,  B81B7/02 ,  G01J1/02 ,  G01P15/09 ,  H01L41/08 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/23 ,  H01L41/319 ,  H01L41/39 ,  H02N2/18

CPC classification number: H01L41/1136 ,  B81B2201/032 ,  B81C1/00658 ,  G01J5/04 ,  G01J5/046 ,  G01J5/34 ,  G01P15/09 ,  G01P2015/0828 ,  H01L37/02 ,  H01L41/0815 ,  H02N2/186

Abstract: A ferroelectric device comprises: a silicon substrate (a first substrate) 10; a lower electrode (a first electrode) 14a formed on one surface side of first substrate 10; a ferroelectric film 14b formed on a surface of lower electrode 14a opposite to first substrate 10 side; and an upper electrode (a second electrode) 14c formed on a surface of ferroelectric film 14b opposite to lower electrode 14a side. The ferroelectric film 14b is formed of a ferroelectric material with a lattice constant difference from silicon. The ferroelectric device further comprises a shock absorbing layer 14d formed of a material with better lattice matching with ferroelectric film 14b than silicon and provided directly below the lower electrode 14a. The first substrate 10 is provided with a cavity 10a that exposes a surface of shock absorbing layer 14d opposite to lower electrode 14a side.

公开(公告)号：EP2018673B1

公开(公告)日：2014-01-08

申请号：EP07725309.4

申请日：2007-05-16

Applicant: MicroGaN GmbH

Inventor： KUNZE, Mike ,  DAUMILLER, Ingo

IPC: H01L41/09 ,  H01L41/047 ,  H01H57/00 ,  H01G5/18 ,  F04B43/04

CPC classification number: F04B43/046 ,  B81B3/0024 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/032 ,  H01F21/04 ,  H01F2007/068 ,  H01G5/18 ,  H01L41/047 ,  H01L41/0933 ,  H01L41/094 ,  H01L41/0973

公开(公告)号：EP2504274A1

公开(公告)日：2012-10-03

申请号：EP10787532.0

申请日：2010-11-22

Applicant: BAE Systems Plc.

Inventor： ELEY, Rebecka ,  HUCKER, Martyn John ,  STURLAND, Ian Michael

IPC: B81B3/00 ,  H01L41/09 ,  H01L41/22

CPC classification number: H02N2/043 ,  B81B3/0021 ,  B81B2201/032 ,  B81B2203/0109 ,  H01L41/0933 ,  H01L41/22

Abstract: A MEMS device, and method of fabrication thereof, comprising: a wall arranged as a closed loop(for example, comprising a plurality of interconnected lengths (11-18)); and a bridging portion (54) having two ends and an intermediate portion between these ends; the bridging portion (54) is connected at one end to a first portion of the wall and at the other end to a second portion of the wall non-contiguous to the first; whereby when the intermediate portion is displaced in a direction through a plane defined between the two ends, the portions of the wall connected to the bridging portion (54) are each displaced in a respective direction in the plane, and at least one further portion of the wall is displaced in a direction that is in the plane and that is different to the directions that the two portions connected to the bridging portion (54) are displaced in.

公开(公告)号：EP2018673A2

公开(公告)日：2009-01-28

申请号：EP07725309.4

申请日：2007-05-16

Applicant: MicroGaN GmbH

Inventor： KUNZE, Mike ,  DAUMILLER, Ingo

IPC: H01L41/09 ,  F03G7/06 ,  H01H57/00 ,  H01G5/16 ,  H01F21/04 ,  F04B43/04

CPC classification number: F04B43/046 ,  B81B3/0024 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/032 ,  H01F21/04 ,  H01F2007/068 ,  H01G5/18 ,  H01L41/047 ,  H01L41/0933 ,  H01L41/094 ,  H01L41/0973

Abstract: The invention relates to a semiconductor actuator comprising a substrate base (1), a bending structure (2) which is connected to the substrate base and can be bent at least partially in relation to the substrate base and is provided with semiconductor compounds based on nitrides of main group III elements, and at least two electrical supply contacts (3a, 3b) for impressing an electrical current into the bending structure or for applying an electrical voltage to the bending structure. At least two of the supply contacts are interspaced respectively on the bending structure and/or integrated into the same.

公开(公告)号：EP1934133A1

公开(公告)日：2008-06-25

申请号：EP05791165.3

申请日：2005-10-10

Applicant: Silverbrook Research Pty. Ltd

Inventor： SILVERBROOK, Kia

IPC: B81C1/00 ,  B41J2/05 ,  B41J2/16

CPC classification number: B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/032 ,  B81B2201/052 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0108 ,  B81C2201/0126

Abstract: A method of forming a suspended beam in a MEMS process is disclosed. In the process a pit (8) is etched into a substrate (5). Sacrificial material (10) is deposited in the pit (8) and on the surrounding substrate surface. The sacrificial material (10) is then removed from the surrounding substrate surface and from the periphery of the pit (8) so that there is a gap between the sacrificial material and at least two sidewalls of the pit. The sacrificial material is then heated so that it reftows such that the remaining sacrificial material contacts the sidewalls of the pit. Material for the beam (12), which is typically a metal, is then deposited on the substrate surface and the reflowed sacrificial material, and the sacrificial material is then removed to form the suspended beam. The beam could be used as the heating element in an inkjet printer.