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200 条记录 (耗时 0.023 秒)

    PIEZOELECTRIC ELEMENT, PIEZOELECTRIC DEVICE, INK-JET HEAD, AND INK-JET PRINTER
    41.
    发明授权
    PIEZOELECTRIC ELEMENT, PIEZOELECTRIC DEVICE, INK-JET HEAD, AND INK-JET PRINTER 有权
    压电元件，压电元件，喷墨头和墨水JET

    公开(公告)号：EP2884551B1

    公开(公告)日：2017-04-12

    申请号：EP13827792.6

    申请日：2013-07-25

    申请人： Konica Minolta, Inc.

    发明人： MATSUDA, Shinya

    IPC分类号： H01L41/187 ,  H01L41/08 ,  B41J2/14

    CPC分类号： H01L41/18 ,  B41J2/14201 ,  B41J2/14233 ,  B41J2202/03 ,  H01L41/053 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/319

    摘要： A piezoelectric element which includes an undercoat layer and a piezoelectric material layer that have been formed on a substrate, the undercoat layer being for controlling the crystallinity of the piezoelectric material layer. The piezoelectric material layer is configured of crystals having an ABO 3 -type structure which contains at least Pb at the A sites. In the undercoat layer, the surface that faces the interface with the substrate contains, at the A sites, at least Pb and another substance that differs in content from that in the piezoelectric material layer and, at the B sites, substances having a content ratio different from that in the piezoelectric material layer. Due to this, the undercoat layer has a given crystal structure that has better crystallinity than the piezoelectric material layer. In the layer of the undercoat layer which is located upper than the surface that faces the interface with the substrate, the content of the other substance contained in the A sites of the undercoat layer gradually changes from the surface that faces the interface with the substrate to the surface that faces the interface with the piezoelectric material layer, while the content ratio of the substances contained in the B sites gradually changes. Thus, the composition of the undercoat layer comes closer to that of the piezoelectric material layer.

    PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC ELEMENT APPLIED DEVICE
    44.
    发明公开
    PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC ELEMENT APPLIED DEVICE 有权
    罂粟草植物元素在VORRICHTUNG MIT ANGEBRACHTEM PIEZOELEKTRISCHEM ELEMENT

    公开(公告)号：EP3098868A1

    公开(公告)日：2016-11-30

    申请号：EP16171516.4

    申请日：2016-05-26

    申请人： Seiko Epson Corporation

    发明人： KITADA, Kazuya ,  OMOTO, Masayuki

    IPC分类号： H01L41/187

    CPC分类号： H01L41/18 ,  B41J2/14233 ,  B41J2002/14241 ,  B41J2202/03 ,  H01L41/047 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1873 ,  H01L41/317 ,  H01L41/318

    摘要： There is provided a piezoelectric element which includes a first electrode which is formed on a substrate, a piezoelectric layer which is formed on the first electrode, and is formed from a compound oxide having an ABO 3 type perovskite structure in which potassium (K), sodium (Na), niobium (Nb), and manganese (Mn) are provided, and a second electrode which is formed on the piezoelectric layer. The manganese includes bivalent manganese (Mn 2+ ), trivalent manganese (Mn 3+ ), and tetravalent manganese (Mn 4+ ). A molar ratio (Mn 2+ /(Mn 3+ +Mn 4+ )) of the bivalent manganese to a sum of the trivalent manganese and the tetravalent manganese is equal to or greater than 0.31.

    摘要翻译： 提供了一种压电元件，其包括形成在基板上的第一电极，形成在第一电极上的压电层，并且由具有ABO 3型钙钛矿结构的复合氧化物形成，其中钾（K） 提供钠（Na），铌（Nb）和锰（Mn），以及形成在压电层上的第二电极。 锰包括二价锰（Mn 2+），三价锰（Mn 3+）和四价锰（Mn 4+）。 二价锰与三价锰和四价锰的和的摩尔比（Mn 2+ /（Mn 3+ + Mn 4+））等于或大于0.31。

    PIEZOELECTRIC ACOUSTIC RESONATOR WITH ADJUSTABLE TEMPERATURE COMPENSATION CAPABILITY
    46.
    发明公开
    PIEZOELECTRIC ACOUSTIC RESONATOR WITH ADJUSTABLE TEMPERATURE COMPENSATION CAPABILITY 审中-公开
    温度可调节补偿能力压电声谐振器

    公开(公告)号：EP2892153A4

    公开(公告)日：2016-02-24

    申请号：EP13804060

    申请日：2013-08-21

    申请人： ZTE CORP ,  UNIV TIANJIN

    发明人： ZHANG HAO ,  DU LIANGZHEN ,  PANG WEI ,  LI JIANBANG ,  HU NIANCHU ,  KANG KAI

    IPC分类号： H03H9/02 ,  H01L41/18

    CPC分类号： H03H9/02102 ,  H01L41/0477 ,  H01L41/18 ,  H01L41/183

    摘要： A piezoelectric acoustic resonator with an adjustable temperature compensation capability is disclosed. The piezoelectric acoustic resonator includes: a piezoelectric acoustic reflection structure, a first electrode, a second electrode, a piezoelectric layer between the first electrode and the second electrode, and a temperature compensation layer; wherein the temperature compensation layer is a single-layer temperature compensation layer formed of Si x O y material, or a composite temperature compensation layer formed by stacking material with a positive temperature coefficient of sound velocity and material with a negative temperature coefficient of sound velocity; and the temperature compensation layer is configured to: perform reverse compensation for a temperature frequency shift caused by the first electrode, the piezoelectric layer and the second electrode in the piezoelectric acoustic resonator; wherein x:y is not equal to 1:2.