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814 条记录 (耗时 0.018 秒)

    Thin film transistor with a LDD structure and method of producing the same
    62.
    发明公开
    Thin film transistor with a LDD structure and method of producing the same 审中-公开
    具有制备LDD结构和方法的薄膜晶体管

    公开(公告)号：EP0921576A3

    公开(公告)日：1999-11-03

    申请号：EP98122700.2

    申请日：1998-11-30

    申请人： MATSUSHITA ELECTRONICS CORPORATION

    发明人： Oka, Hitoshi ,  Ito, Yutaka

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/66757 ,  H01L29/78621

    摘要： On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are formed. The region 4 has a low impurity concentration, and the region 5 has a high impurity concentration. The length of the low concentration region 4 measured from the edge of gate insulating film 9 is not smaller than the average grain size of the polycrystal semiconductor film 3. The LCD device employing the TFT thus constructed is free from white spots (micro brighter spots) in a high temperature atmosphere.

    Method for forming thin film
    64.
    发明公开
    Method for forming thin film 审中-公开
    Verfahren zum Herstellen einerDünnschicht

    公开(公告)号：EP0947602A2

    公开(公告)日：1999-10-06

    申请号：EP99302080.9

    申请日：1999-03-18

    申请人： Matsushita Electronics Corporation

    发明人： Kobayashi, Kazunori ,  Nakamura, Akira ,  Ishihara, Tomoaki ,  Nobusada, Toshihide, A-906 Ibaraki-Rekkusu-Manshon

    IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/56 ,  H01J37/34

    CPC分类号： C23C14/566 ,  C23C14/0036 ,  C23C14/56

    摘要： A method for forming a thin film of the present invention includes the steps of performing sequentially first idling discharge under application of a first level of discharge power upon gas introduction (period t 1a ), intermediate idling discharge under application of a second level of discharge power lower than the first level (period t 1b ), and second idling discharge at the first level of discharge power (period t 1c ), so that the pressure of sputtering gas and an intermediate product produced during the idling discharge are stabilized. The discharge power is lowered to the second level, the shutter is opened, and an ITO thin film, for example, is formed on a first substrate (t 2 ). Thereafter, the same cycles are repeated to form ITO thin films on substrates.

    摘要翻译： 本发明的薄膜形成方法包括以下步骤：在施加气体导入时的第一放电电力（时间段t1a）时进行第一次怠速放电，在施加第二放电功率的情况下进行中间怠速放电 比第1级（期间t1b）以及第1次放电时的第2怠速放电（期间t1c），使得在空转时产生的溅射气体和中间产物的压力稳定。 放电功率降低到第二水平，闸门打开，并且例如在第一基板（t2）上形成ITO薄膜。 此后，重复相同的循环以在衬底上形成ITO薄膜。

    Discharge lamp and luminaire
    65.
    发明公开
    Discharge lamp and luminaire 有权
    无极灯和灯

    公开(公告)号：EP0945894A1

    公开(公告)日：1999-09-29

    申请号：EP99302274.8

    申请日：1999-03-24

    申请人： Matsushita Electronics Corporation

    发明人： Mori, Toshio ,  Mukai, Kenji, 502, Hatishinobugaoka2bankan ,  Tanaka, Hiromi ,  Higashi, Toru ,  Takeuchi, Tetsuji ,  Kanaya, Sueko ,  Shibata, Haruo ,  Iwama, Katsuaki

    IPC分类号： H01J61/42 ,  C09K11/77 ,  H01J61/44

    CPC分类号： H01J61/44

    摘要： A discharge lamp of the present invention radiates visible light having the following lights combined: light having an emission peak in 400 to 490 nm wavelength range in a blue spectral region; light having an emission peak in a 500 to 550 nm wavelength range in a green spectral region; and light having with an emission peak in 600 to 670 nm wavelength range in a red spectral region. The color point of the radiated light lies within a region common to the following regions: a region bounded by an ellipse with a color point (u, v) = (0.224, 0.330) as a center thereof, a major axis of 0.056, a minor axis of 0.024, and an angle from the u axis of 20 degrees in the CIE 1960 UCS diagram; a region bounded by an ellipse with a color point (u, v) = (0.224, 0.330) as a center thereof, a major axis of 0.078, a minor axis of 0.014, and an angle from the u axis of 30 degrees in the CIE 1960 UCS diagram; a region bounded by an ellipse with a color point (u, v) = (0.235, 0.335) as a center thereof, a major axis of 0.060, a minor axis of 0.030, and an angle from the u axis of 30 degrees in the CIE 1960 UCS diagram; a region bounded by an ellipse with a color point (u, v) = (0.225, 0.330) as a center thereof, a major axis of 0.060, a minor axis of 0.018, and an angle from the u axis of 20 degrees in the CIE 1960 UCS diagram; and a region on a side of color temperature lower than an isotemperature line of a correlated color temperature of 3500K.

    Plasma nitridation of a silicon oxide film
    67.
    发明公开
    Plasma nitridation of a silicon oxide film 失效
    等离子渗氮一Silizumoxidfilms的

    公开(公告)号：EP0886308A3

    公开(公告)日：1999-09-22

    申请号：EP98111351.7

    申请日：1998-06-19

    申请人： Japan Science and Technology Corporation ,  Matsushita Electronics Corporation

    发明人： Kobayashi, Hikaru ,  Yoneda, Kenji

    IPC分类号： H01L21/314 ,  H01J37/32

    CPC分类号： H01L21/28202 ,  H01J2237/3387 ,  H01L21/3144 ,  Y10S438/961

    摘要： Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate (1) capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0°C to 700°C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.

    CDMA MOBILE STATION AND CDMA TRANSMISSION METHOD
    68.
    发明公开
    CDMA MOBILE STATION AND CDMA TRANSMISSION METHOD 失效
    CDMA移动电话CDMAÜBERTRAGUNGSVERFAHREN

    公开(公告)号：EP0936831A1

    公开(公告)日：1999-08-18

    申请号：EP98932553.5

    申请日：1998-07-16

    申请人： Matsushita Electronics Corporation

    发明人： YAMADA, Daisuke S-306 Life Hills Kanazawa Hakkei

    IPC分类号： H04Q7/38

    CPC分类号： H04W52/54

    摘要： Burst frame generation circuit 307 generates burst data solely made of pilot symbols and transmission power control symbols. Transmission interval control circuit 308 controls the transmission interval of said burst data N times (N: a natural number) one slot at the end of transmission and maintains synchronization while reducing power consumption.

    摘要翻译： 突发帧生成电路307生成由导频符号和发送功率控制符号构成的突发数据。 发送间隔控制电路308在发送结束时控制所述突发数据的发送间隔N次（N：自然数）一个时隙，并且在减少功耗的同时保持同步。