公开(公告)号：EP0423446A1

公开(公告)日：1991-04-24

申请号：EP90114949.2

申请日：1990-08-03

Applicant: SHIPLEY COMPANY INC.

Inventor： Lamola, Angelo A. ,  Calabrese, Gary ,  Sinta, Roger

IPC: G03F7/038

CPC classification number: G03F7/0045 ,  G03F7/038

Abstract: A photoacid-generating photoresist composition sensitized with an aromatic, multi-ring, heterocylcic nitrogen containing sensitizer, preferably a ring extended phenothiazine derivative. The use of the sensitizer permits exposure of photoresists to near UV irradiation where such photoresists have heretofore been exposed to deep UV irradiation. The invention is especially useful for acid hardening photoresist systems.

Abstract translation: 一种产生光致酸的光致抗蚀剂组合物，其用芳香族，多环，杂环状含氮增感剂，优选环延长的吩噻嗪衍生物敏化。 敏化剂的使用允许光致抗蚀剂暴露于近紫外辐射下，其中这种光刻胶已经暴露于深紫外线照射。 本发明特别适用于酸硬化光致抗蚀剂体系。

公开(公告)号：EP0163202B1

公开(公告)日：1991-02-06

申请号：EP85105992.3

申请日：1985-05-15

Applicant: SHIPLEY COMPANY INC.

Inventor： Martin, Robert ,  Perkins, Majorie

IPC: G03F7/42

CPC classification number: G03F7/425

公开(公告)号：EP0397988A2

公开(公告)日：1990-11-22

申请号：EP90105228.2

申请日：1990-03-20

Applicant: SHIPLEY COMPANY INC.

Inventor： Gulla, Michael ,  Sricharoenchaikit, Prasit

IPC: G03F7/40

CPC classification number: H05K3/185 ,  G03F7/265 ,  G03F7/40

Abstract: This invention describes methods for altering a substrate in a fine line image pattern using a microlithographic process including formation of a metal mask over a photoresist coating to protect the photoresist coating during dry development of the same. The invention also describes a method for formation of the metal mask. Briefly stated, the process of the invention comprises the steps of coating a substrate with a photoresist coating, exposing the photoresist coating so formed to a desired pattern of actinic radiation, catalyzing the entire surface of the photoresist coating with an electroless plating catalyst, developing the photoresist layer to a depth at least sufficient to remove the undesired catalyst layer in an image pattern, forming a metal pattern on the desired (remaining) catalyst layer and dry developing the remaning photoresist coating unprotected by the metal mask.

Abstract translation: 本发明描述了使用包括在光致抗蚀剂涂层上形成金属掩模的微光刻工艺来改变细线图像图案中的衬底的方法，以在其干燥显影期间保护光致抗蚀剂涂层。 本发明还描述了形成金属掩模的方法。 简要说明，本发明的方法包括以下步骤：用光致抗蚀剂涂层涂覆基材，将形成的光致抗蚀剂涂层暴露于期望的光化辐射图形，用化学镀催化剂催化光致抗蚀剂涂层的整个表面， 光致抗蚀剂层至少足以去除图案图案中的不需要的催化剂层的深度，在期望的（剩余的）催化剂层上形成金属图案，并干燥显影未被金属掩模保护的残留光刻胶涂层。

公开(公告)号：EP0244567A3

公开(公告)日：1990-03-21

申请号：EP87101903.0

申请日：1987-02-11

Applicant: SHIPLEY COMPANY INC.

Inventor： Vidusek, David A. ,  Legenza, Michael ,  Vincent, Jeffery L.

IPC: G03F7/26 ,  G03F7/02

CPC classification number: G03F7/322 ,  G03F7/094

Abstract: The invention is for a developer for a bilayer photoresist film comprising a first relatively thick layer of a polyglutarimide and a second relatively thin layer of a diazo sensitized novolak resin. The developer is an aqueous solution of a tetra alkyl ammonium hydroxide where at least two of the alkyl groups have two or more carbon atoms. The developer of the invention permits development of the bottom resist layer without erosion of the top resist layer.

Abstract translation: 本发明是用于双层光致抗蚀剂膜的显影剂，其包含聚戊二酰亚胺的第一较厚层和重氮敏化酚醛清漆树脂的第二较薄层。 显影剂是四烷基氢氧化铵的水溶液，其中至少两个烷基具有两个或更多个碳原子。 本发明的显影剂允许显影底部抗蚀剂层而不会侵蚀顶部抗蚀剂层。

公开(公告)号：EP0285025A2

公开(公告)日：1988-10-05

申请号：EP88104834.2

申请日：1988-03-25

Applicant: SHIPLEY COMPANY INC.

Inventor： Cunningham, Wells Crassous

IPC: G03F7/10

CPC classification number: G03F7/0758

Abstract: Both positive and negative acting photoresist compositions are provided which contain one or more silylated poly(vinyl)phenol polymers and at least one sensitizer which forms an acid upon irradiation. The anion of such acids has an affinity for silicon.

Abstract translation: 提供正和负作用的光致抗蚀剂组合物，其含有一种或多种甲硅烷基化聚（乙烯基）酚聚合物和至少一种在照射时形成酸的敏化剂。 这种酸的阴离子对硅具有亲和力。

公开(公告)号：EP0255557A3

公开(公告)日：1988-08-10

申请号：EP86112660

申请日：1986-09-12

Applicant: SHIPLEY COMPANY INC.

Inventor： Rodriquez, Stephen S. ,  Hawkins, Robert E.

IPC: H05K03/00 ,  G03C07/16 ,  G03F07/00 ,  C23F01/02 ,  C25D05/02

CPC classification number: H05K3/061 ,  G03F7/00 ,  G03F7/164 ,  H05K1/117 ,  H05K3/108 ,  H05K3/243 ,  H05K2201/0355 ,  H05K2203/0582 ,  H05K2203/0723 ,  H05K2203/0783 ,  H05K2203/135

Abstract: A method for coating a conductive surface with an organic coating where one discrete area of the organic coating is coated onto the surface in an image pattern by conventional means and another discrete area of the organic coating is electrophoretically deposited onto the surface. The process is useful for diverse applications including the fabrication of printed circuit boards.

公开(公告)号：EP0261424A2

公开(公告)日：1988-03-30

申请号：EP87112337.8

申请日：1987-08-25

Applicant: SHIPLEY COMPANY INC.

Inventor： Wilkinson, Gary Morgan ,  Deckert, Cheryl Ann ,  Doubrava, Jeffrey J.

IPC: C23C18/28 ,  H05K3/42

CPC classification number: H05K3/422 ,  C23C18/28 ,  H05K3/0055 ,  H05K3/383 ,  H05K3/42 ,  H05K3/427 ,  H05K2203/0796 ,  H05K2203/122

Abstract: A process for the formation of a plated through-hole printed circuit board comprising treating a circuit board base material as follows:

1. condition with an oxidant solution;
2 (A). contact with a copper etchant that etches copper and neutralizes oxidant residues on the surface to be plated; and
2 (B). contact with a conditioner that conditions the board surface for enhanced catalyst adsorption; or
2 (A). contact with a neutralizer for oxidant residues that neutralizes said residues and conditions the board surface for enhance catalyst asdorption; and
2 (B). contact with a copper etchant; and
3. catalyze the board; and
4. plate electroless metal onto catalyzed surfaces from a plating solution containing a source of halide ions in a concentration of at least 0.1 moles per liter of solution.
The process is characterized by the absence of a step of acceleration and contains fewer processing steps than prior art processes.

Abstract translation: 一种用于形成电镀通孔印刷电路板的方法，包括如下处理电路板基材：1.用氧化剂溶液的状态; 2（A）。 与蚀刻铜并消除待镀表面上的氧化剂残留物的铜蚀刻剂接触; 和2（B）。 与调节板表面的调理剂接触以增强催化剂吸附; 或2（A）。 与用于中和所述残留物的氧化剂残余物的中和剂接触，并且调节板表面以增强催化剂的吸收; 和2（B）。 与铜蚀刻剂接触; 和3.催化董事会; 和4.从含有浓度为每升溶液至少0.1摩尔的卤离子源的电镀溶液将催化表面上的无电金属镀到板上。 该方法的特征在于不存在加速步骤，并且比现有技术方法包含较少的加工步骤。

公开(公告)号：EP0242530A2

公开(公告)日：1987-10-28

申请号：EP87102422.0

申请日：1987-02-20

Applicant: SHIPLEY COMPANY INC.

Inventor： Fisher, Gordon

IPC: G01N27/42 ,  C25D21/12

CPC classification number: G01N27/423 ,  H05K3/241 ,  H05K3/423

Abstract: A method for determining the effective quantity of an organic additive in an electroplating bath involving passing an inert electrode through a predetermined sequence of voltammetric steps including a step of plating the electrode at a given applied potential, stripping the plated metal at a given applied potential, and conditioning the inert electrode without applied potential; correlating the quantity of additive with the coulombs utilized during the metal stripping step; and using the same predetermined sequence of voltammetric steps for a bath having an unknown quantity of additive.

Abstract translation: 一种用于确定电镀浴中有机添加剂的有效量的方法，包括使惰性电极通过预定的伏安步骤顺序，包括在给定的施加电位下电镀电极的步骤，在给定的施加电位下汽提镀覆的金属， 并调节惰性电极而不施加电位; 将添加剂的量与在金属汽提步骤期间使用的库仑相关联; 并且对于具有未知量的添加剂的浴使用相同的伏安法步骤。

公开(公告)号：EP0202396A2

公开(公告)日：1986-11-26

申请号：EP86101866.1

申请日：1986-02-14

Applicant: SHIPLEY COMPANY INC.

Inventor： Hertlein, Walter G. c/o Shipley AG

IPC: G03B27/72 ,  G03F7/20

CPC classification number: G03F7/70583 ,  G03F7/20

Abstract: A method and a system for determining the characteristics of a photoresist are disclosed. This scanning wedge method is accomplished by linearly varying the exposure dose the photoresist receives. Thereafter, the photoresist is developed. The location of interference fringes on the developed photoresist is then determined. This provides the data necessary to determine the characteristics of the photoresist.

Abstract translation: 公开了一种用于确定光致抗蚀剂的特性的方法和系统。 该扫描楔形法通过线性地改变光致抗蚀剂所接收的曝光剂量来实现。 此后，显影光致抗蚀剂。 然后确定在显影的光致抗蚀剂上的干涉条纹的位置。 这提供了确定光致抗蚀剂特性所需的数据。

公开(公告)号：EP0163202A3

公开(公告)日：1986-10-01

申请号：EP85105992

申请日：1985-05-15

Applicant: SHIPLEY COMPANY INC.

Inventor： Martin, Robert ,  Perkins, Majorie

IPC: G03F07/26

CPC classification number: G03F7/425

Abstract: A composition for stripping a photoresist from a substrate comprising a mixture of lactams where a first Lactam comprises at least 60% of the stripping solution and a second, different lactam comprises the balance. The use of the mixed lactam solution enhances the rate of removal of the resist from a substrate. The preferred lactams are pyrrolidones.