利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

974 条记录 (耗时 0.022 秒)

    High-rate reactive sputtering of dielectric stoichiometric films
    61.
    发明公开
    High-rate reactive sputtering of dielectric stoichiometric films 有权
    化学计量的电介质膜的高性能反应性溅射

    公开(公告)号：EP2770083A1

    公开(公告)日：2014-08-27

    申请号：EP13155936.1

    申请日：2013-02-20

    申请人： University of West Bohemia in Pilsen ,  TRUMPF Huettinger Sp. Z o. o.

    发明人： Bugyi, Rafal ,  Vlcek, Jaroslav ,  Rezek, Jiri ,  Lazar, Jan

    IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/54

    CPC分类号： C23C14/0042 ,  C23C14/0094 ,  C23C14/08 ,  C23C14/548 ,  H01J37/3467

    摘要： A method and apparatus for monitoring and controlling reactive sputter deposition are provided. They are particularly useful for high-rate deposition of dielectric stoichiometric compounds (e.g., metal-oxides, metal-nitrides, metal-oxynitrides, etc.) on various substrates using high power magnetron sputtering a metal target, including high power impulse magnetron sputtering with target power densities of up to several kWcm -2 in short target (cathode) voltage pulses (typically 40 µs to 200 µs). For a given nominal target power level, target material and source gases, a pulsed flow rate of the reactive gas into a vacuum chamber is controlled at a constant target voltage, kept by a power supply, to promote sputter deposition of the dielectric stoichiometric films in a transition region between a "metallic mode" and a "covered (poisoned) mode".