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117 条记录 (耗时 0.015 秒)

    SEMICONDUCTOR DEVICES COMPRISING A PINNED PHOTODIODE STRUCTURE
    76.
    发明公开
    SEMICONDUCTOR DEVICES COMPRISING A PINNED PHOTODIODE STRUCTURE 审中-公开

    公开(公告)号：EP3403284A1

    公开(公告)日：2018-11-21

    申请号：EP17738734.7

    申请日：2017-01-16

    申请人： Heptagon Micro Optics Pte. Ltd.

    发明人： BUETTGEN, Bernhard ,  KÖKLÜ, Gözen ,  LOELIGER, Theodor WALTER

    IPC分类号： H01L31/0352 ,  H01L21/265 ,  H01L21/329 ,  H01L21/33 ,  H01L31/11 ,  H01L31/111

    CPC分类号： H01L31/101 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612

    摘要： A semiconductor device operable to demodulate incident modulated electromagnetic radiation, the semiconductor device comprising: a pinned photodiode structure including a substrate of a first type, an implant layer of a second type disposed within the substrate, first and second auxiliary implant layers of the second type disposed within the substrate and each disposed adjacent to the implant layer of the second type, an implant layer of the first type disposed within the implant layer of the second type and extending into the first and second auxiliary implant layers of the second type, an insulator disposed on a surface of the substrate, and a photo-detection region; first and second transfer gates disposed on a surface of the insulator, the transfer gates being operable to generate a field within the substrate; and first and second floating diffusion implant layers of the second type disposed within the substrate.

    Method and Device for the demodulation of modulated optical signals
    77.
    发明授权
    Method and Device for the demodulation of modulated optical signals 有权

    公开(公告)号：EP1777811B1

    公开(公告)日：2018-10-03

    申请号：EP05405589.2

    申请日：2005-10-19

    申请人： Heptagon Micro Optics Pte. Ltd.

    发明人： Büttgen, Bernhard ,  Lehmann, Michael ,  Neukom, Simon ,  Oggier, Thierry ,  Lustenberger, Felix

    IPC分类号： H03D7/00

    CPC分类号： H03D7/00

    摘要： A demodulation device (1) in semiconductor technology is disclosed. The device (1) is capable of demodulating an injected modulated current. The device (1) comprises an input node (IN1), a sampling stage (DG1, IG1, GS1, IG2, DG2) and at least two output nodes (D1, D2). The sampling stage DG1, IG1, GS1, IG2, DG2) comprises transfer means (GL, GM, GR) for transferring a modulated charge-current signal from the input node (IN1) to one of the output nodes (D1, D2) allocated to the respective time interval within the modulation period. The small size and the ability to reproduce the device (1) in standard semiconductor technologies make possible a cost-efficient integration of the device (1).

    Large-area pixel for use in an image sensor
    78.
    发明授权
    Large-area pixel for use in an image sensor 有权

    公开(公告)号：EP1624490B1

    公开(公告)日：2018-10-03

    申请号：EP04405489.8

    申请日：2004-08-04

    申请人： Heptagon Micro Optics Pte. Ltd.

    发明人： Buttgen, Bernhard ,  Lustenberger, Felix ,  Seitz, Peter

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/14812 ,  H01L27/14603

    摘要： A pixel for detecting incident radiation (In) over a large area with high sensitivity and low power consumption. The pixel comprises a semiconductor substrate (1), covered by a thin insulating layer (2), on top of which a dendritic gate structure (3) is arranged. The dendritic gate (3) is electrically connected at two or more contacts (C1, C2) with voltage sources, leading to the flow of a current and a position-dependent potential distribution in the gate (3). Due to the use of arborescent structures and various materials (31, 32), the pixel can be optimized for a certain application, in particular in terms of the electric field distribution, the RC time constant, the power consumption and the spectral sensitivity. Due to its compact size, the photo sensor can be arranged in linear or two-dimensional manner for the realization of line and area sensors.