公开(公告)号：EP1027482A1

公开(公告)日：2000-08-16

申请号：EP98939246.9

申请日：1998-08-05

申请人： ADVANCED TECHNOLOGY MATERIALS, INC.

发明人： BHANDARI, Gautam ,  OLANDER, W. Karl ,  TODD, Michael, A. ,  GLASSMAN, Timothy E.

IPC分类号： C30B23/02 ,  C30B25/14 ,  C30B35/00

CPC分类号： H01L21/383 ,  C23C16/4488 ,  C30B25/14 ,  C30B31/16

摘要： A method and apparatus for generating a dopant gas species which is a reaction product of a metal and a gas reactive therewith to form the dopant gas species. A source mass of metal (16) is provided and contacted with the reactive gas to yield a dopant gas species. The dopant gas species may be passed to a chemical vapor deposition reactor (320), or flowed to an ionization chamber (46) to generate ionic species for ion implantation.

公开(公告)号：EP1014431A2

公开(公告)日：2000-06-28

申请号：EP99124785.9

申请日：1999-12-14

申请人： DaimlerChrysler AG

发明人： Kibbel, Horst ,  Kuchenbecker, Jessica

IPC分类号： H01L21/203 ,  C30B23/02

CPC分类号： C30B23/02 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02658

摘要： Die Erfindung beschreibt ein Verfahren zur Herstellung von relaxierten Epitaxieschichten auf einem Halbleitersubstrat mittels Molekularstrahlepitaxie mit einer Wasserstoffquelle, indem in einer in situ Prozeßfolge

an oder nahe der Substratoberfläche eine wasserstoffhaltige Zwischenschicht deponiert oder eingebracht wird,
darauf eine verspannte Epitaxieschicht aufgewachsen wird und
die Epitaxieschicht mittels einer Temperaturbehandlung relaxiert wird.

摘要翻译： 松弛的外延层生产包括含氢中间层形成，应变外延层生长和热松弛。 特别是通过使用氢源的分子束外延，半导体衬底上的弛豫外延层生产包括在衬底表面上或附近形成含氢中间层（11-13），生长应变外延层并热释放该层。 还包括由上述方法制备的层序列的独立权利要求，其包括具有含氢中间层（11-13）的硅衬底（1），第一松弛外延Si1-xGex（x = 0.1至0.3）缓冲液 第二弛豫外延Si1-xGex（x = 0.3〜0.5）缓冲层和Si1-xGex器件结构。

公开(公告)号：EP0732428B1

公开(公告)日：2000-05-17

申请号：EP96301467.5

申请日：1996-03-05

申请人： AT&T Corp.

发明人： Gyorgy, Ernst Michael ,  Suzuki, Yuri ,  Phillips, Julia Mae ,  Van Dover, Robert Bruce

IPC分类号： C30B23/02 ,  H01F10/30 ,  H01F10/20 ,  H01F41/20

CPC分类号： H01F41/20 ,  H01F10/20 ,  H01F10/265 ,  H01F10/30

公开(公告)号：EP0852416A4

公开(公告)日：1999-04-07

申请号：EP96930428

申请日：1996-09-17

申请人： HITACHI LTD

发明人： TANAKA TOSHIAKI ,  AOKI SHIGERU

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L33/34 ,  H01L33/36 ,  H01L33/46 ,  H01S5/02 ,  H01S5/183 ,  H01S5/20 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323 ,  H01S5/42 ,  H01S3/18 ,  C30B23/02 ,  H01L21/205

CPC分类号： H01L33/025 ,  B82Y20/00 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02387 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/16 ,  H01L33/20 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0207 ,  H01S5/0208 ,  H01S5/0213 ,  H01S5/18319 ,  H01S5/18338 ,  H01S5/18341 ,  H01S5/1835 ,  H01S5/2077 ,  H01S5/223 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/423 ,  H01S2304/12

公开(公告)号：EP0739250A4

公开(公告)日：1998-09-02

申请号：EP95913954

申请日：1995-01-17

申请人： QQC INC

发明人： MISTRY PRAVIN ,  TURCHAN MANUEL

IPC分类号： C04B41/80 ,  B01J19/12 ,  B23K26/06 ,  B81C99/00 ,  C21D1/09 ,  C23C14/06 ,  C23C14/22 ,  C23C14/28 ,  C23C16/26 ,  C23C16/27 ,  C23C16/44 ,  C23C20/06 ,  C23C26/00 ,  C30B23/02 ,  C30B25/02 ,  C30B25/10 ,  C30B25/18 ,  C30B29/04 ,  H01S3/00 ,  B05D3/06

CPC分类号： B05D3/06 ,  B23K26/0604 ,  B23K26/0622 ,  C23C14/0605 ,  C23C14/22 ,  C23C14/28 ,  C23C16/26 ,  C23C16/27 ,  C23C16/4418 ,  C30B23/02 ,  C30B25/105 ,  C30B25/18 ,  C30B29/04

摘要： Energy, such as from three different lasers, is directed at the surface of a substrate to mobilize and vaporize a carbon constituent element (e.g., carbide) within the substrate (e.g., steel). The vaporized constituent element is reacted by the energy to alter its physical structure (e.g., from carbon to diamond) to that of a composite material which is diffused back into the substrate as a composite material. An additional secondary element, which also contains carbon, may optionally be directed (e.g., sprayed) onto the substrate to augment, enhance and/or modify the formation of the composite material, as well as to supply sufficient or additional material for fabricating a diamond or diamond-like coating on the surface of the substrate. The process can be carried out in an ambient environment (e.g., without a vacuum), and without pre-heating or post-cooling of the substrate.

公开(公告)号：EP0810308A2

公开(公告)日：1997-12-03

申请号：EP97303596.7

申请日：1997-05-27

申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Tanaka, Shun-ichiro

发明人： Tanaka, Shun-ichiro ,  Xu, BingShe

IPC分类号： C30B29/02 ,  C30B23/02 ,  C22C1/00 ,  C23C14/28

CPC分类号： C23C14/30 ,  B22F9/30 ,  B22F2999/00 ,  C23C14/14 ,  C30B23/002 ,  C30B23/02 ,  C30B29/02 ,  Y10T428/30 ,  B22F2202/11

摘要： An ultrafine Al particle consists of an Al multiply twinned particle. The Al multiply twinned particle has a decahedron structure surrounded by {111} planes. The Al multiply twinned decahedral partucle has a diameter of 10 to 30 nm. Such an ultrafine Al particle consisting of the Al multiply twinned decahedral particle is obtained as follows. A metastable Al oxide particle is placed on an amorphous carbon substrate having the reduction effect. Then the electron beam is irradiated to the metastable Al oxide particle placed on the amorphous carbon substrate in the vacuum atmosphere. From the metastable Al oxide particle, Al atoms or Al clusters are emitted and adsorbed to the substrate. By adjusting the electron beam intensity so that the ultrafine Al particle in the above procedure has a diameter from 10 to 30 nm, the Al multiply twinned particle having a decahedron is obtained.

摘要翻译： 超细Al颗粒由Al多重孪晶颗粒组成。 Al多重双粒子具有由ä111ü飞机包围的十面体结构。 Al多重孪生十面体单核具有10至30nm的直径。 由Al多重双晶十面体粒子组成的这种超细Al粒子如下获得。 将亚稳态Al氧化物颗粒置于具有还原效果的无定形碳衬底上。 然后在真空气氛中将电子束照射到放置在非晶碳基板上的亚稳态Al氧化物颗粒。 从亚稳态Al氧化物颗粒中，Al原子或Al簇被发射并吸附到衬底上。 通过调节电子束强度，使上述方法中的超细Al粒子的直径为10〜30nm，得到具有十面体的Al倍增孪晶粒子。

公开(公告)号：EP0609886B1

公开(公告)日：1997-08-20

申请号：EP94101665.1

申请日：1994-02-03

申请人： RIKAGAKU KENKYUSHO

发明人： Kumagai, Hiroshi ,  Toyoda, Kouichi

IPC分类号： C30B25/02 ,  C30B23/02 ,  C30B29/16 ,  C30B29/18

CPC分类号： C30B25/02 ,  C23C16/45523 ,  C30B29/16 ,  C30B29/18 ,  C30B29/28 ,  Y10S117/904

摘要： The present invention has been achieved by perceiving the fact to the effect that a semiconductor production process-like manner such as CVD method or the like by which materials and film thickness can be controlled in an atomic scale may be utilized in case of preparing thin-film crystal, and employing such semiconductor production process-like manner being quite different from conventional technique. The invention relates to preparation of crystalline thin-films for solid-state lasers wherein a substrate contained in a vessel under a high vacuum condition is heated, materials for forming the laser material are supplied onto the surface of the aforesaid substrate in the form of gas, ion, single metal or metal compound to grow crystal on the surface of the aforesaid substrate, and a material of active ionic species is supplied onto the surface of the aforesaid substrate simultaneously with supply of the aforesaid materials for forming the laser host crystal, thereby controlling valence number of the material of active ionic species so as to be identical with the valence number of the metal ion constituting the crystal of the aforesaid laser host crystal.

公开(公告)号：EP0785299A1

公开(公告)日：1997-07-23

申请号：EP97100736.4

申请日：1997-01-17

申请人： MURATA MANUFACTURING CO., LTD.

发明人： Nakanishi, Hidefumi ,  Sakurai, Atsushi ,  Kobayashi, Masato ,  Yoshino, Yukio

IPC分类号： C30B23/02 ,  C30B29/02

CPC分类号： C30B23/02 ,  C30B29/02

摘要： By using a dual ion-beam sputtering apparatus (1), an aluminum thin-film (13) is formed on a glass substrate (12) made of an amorphous material. While radiating an ion beam (21) for assisting the film formation from an ion source (4) onto the glass substrate (12), the aluminum thin-film (13) is formed by depositing the sputtering ions which are generated by radiating an ion beam (22) onto an aluminum target (11).

摘要翻译： 通过使用双离子束溅射装置（1）对铝薄膜（13）形成在由非晶材料构成的玻璃基板（12）。 而放射至离子束（21），用于从在离子源（4）在玻璃基板（12）协助成膜，将铝薄膜（13）由通过照射到离子沉积生成哪个溅射离子形成的 光束（22），进入到铝靶（11）。

公开(公告)号：EP0532000B1

公开(公告)日：1997-07-23

申请号：EP92115508.1

申请日：1992-09-10

申请人： Masumoto, Tsuyoshi ,  Inoue, Akihisa ,  YKK CORPORATION ,  HONDA GIKEN KOGYO KABUSHIKI KAISHA

发明人： Inoue, Akihisa ,  Masumoto, Tsuyoshi ,  Sasahara, Jun, c/o K.K. Honda Gijutsu Kenkyusho ,  Nosaki, Katsutoshi, K.K. Honda Gijutsu Kenkyusho ,  Yamaguchi, Tadashi

IPC分类号： C22C1/10 ,  B22F1/02 ,  C30B23/00 ,  C30B23/02

CPC分类号： C22C1/10 ,  B22F1/025 ,  C22C32/0068 ,  C30B23/02 ,  Y10T428/12014 ,  Y10T428/12181

公开(公告)号：EP0650465A4

公开(公告)日：1997-05-21

申请号：EP94910900

申请日：1994-03-11

申请人： GRUEN DIETER M

发明人： GRUEN DIETER M

IPC分类号： C01B31/06 ,  C23C14/06 ,  C23C14/22 ,  C23C16/27 ,  C30B23/02 ,  C30B25/10 ,  C30B33/00 ,  H01J9/02

CPC分类号： C23C16/274 ,  C01B32/25 ,  C23C14/0605 ,  C23C14/0611 ,  C23C14/221 ,  C23C16/27 ,  C23C16/277 ,  C30B23/02 ,  C30B25/105 ,  C30B29/04 ,  C30B33/00 ,  H01J9/025 ,  Y10S423/39 ,  Y10S427/102 ,  Y10S427/106 ,  Y10T428/30

摘要： A method of forming synthetic hydrogen defect free diamond or diamond like films on a substrate. The method involves providing vapor containing fullerene molecules with or without an inert gas, providing a device to impart energy to the fullerene molecules, fragmenting at least in part some of the fullerene molecules in the vapor or energizing the molecules to incipient fragmentation, ionizing the fullerene molecules, impinging ionized fullerene molecules on the substrate to assist in causing fullerene fragmentation to obtain a thickness of diamond on the substrate.