摘要:
This disclosure relates to a dry film structure that includes a carrier substrate, and a polymeric layer supported by the carrier substrate. The polymeric layer includes at least one fully imidized polyimide polymer.
摘要:
This disclosure relates to a cleaning composition that contains 1) HF; 2) substituted or unsubstituted boric acid; 3) ammonium sulfate; 4) at least one metal corrosion inhibitor; 5) water; and 6) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
摘要:
This disclosure relates to a composition (e.g., a cleaning and/or stripping composition) containing (a) 0.5 - 25 percent by weight an alkaline compound; (b) 1 - 25 percent by weight an alcohol amine compound; (c) 0.1 - 20 percent by weight a hydroxylammonium compound; (d) 5 - 95 percent by weight an organic solvent; (e) 0.1 - 5 percent by weight a corrosion inhibitor compound; and (f) 2 -25 percent by weight water.
摘要:
This disclosure relates to a dry film structure that includes a carrier substrate, and a polymeric layer supported by the carrier substrate. The polymeric layer includes at least one fully imidized polyimide polymer.
摘要:
This disclosure relates to a cleaning composition that contains 1) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one monocarboxylic acid containing a primary or secondary amino group and at least one additional basic group containing nitrogen; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
摘要:
The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.
摘要:
This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
摘要:
This disclosure relates to a polymer that includes a first repeat unit and at least one end-cap group at one end of the polymer. The first repeat unit includes at least one imide moiety and at least one indane-containing moiety. The end-cap group is capable of undergoing a cycloreversion reaction. This disclosure also relates to a thermosetting composition containing the above polymer.
摘要:
This disclosure relates to photoresist stripping compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one alcohol solvent; 3) at least one quaternary ammonium hydroxide; 4) water; 5) at least one copper corrosion inhibitor selected from 6-substituted-2,4-diamino-1,3,5-triazines; and 6) optionally, at least one defoaming surfactant.