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公开(公告)号：EP2052293B1
公开(公告)日：2013-03-13
申请号：EP07789633.0
申请日：2007-08-07
发明人： WU, Hengpeng , XIANG, Zhong , ZHUANG, Hong , SHAN, Jianhui , YIN, Jian , YAO, Huirong , LU, Ping-Hung
IPC分类号： G03F7/09
CPC分类号： G03F7/091 , Y10S438/952
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2.发明公开ANTIREFLECTIVE COATING COMPOSITIONS COMPRISING SOLVENT MIXTURES FOR PHOTORESISTS 审中-公开随着对光刻胶溶剂混合物ANTI REFLEX涂料组合物
公开(公告)号：EP2126633A1
公开(公告)日：2009-12-02
申请号：EP08709719.2
申请日：2008-01-16
CPC分类号： G03F7/091 , C09D7/20 , G03F7/0048
摘要： The invention relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least one primary organic solvent and at least one secondary organic solvent selected from any of structures 1, 2 and 3, where, R1, R3, and R4, are selected from H and C1-C6 alkyl, and R2, R5, R6, R7, R8, and R9 are selected from C1-C6 alkyl, and n=1-5. The invention also relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least 2 organic solvents, and where the antireflective coating composition has a liquid particle count at 0.2 micron of less than 100/ml after accelerated aging.
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公开(公告)号：EP2035518A2
公开(公告)日：2009-03-18
申请号：EP07734993.4
申请日：2007-06-20
发明人： ZHANG, Ruzhi , NEISSER, Mark, O. , KIM, Woo-Kyu , ABDALLAH, David, J. , HOULIHAN, Francis , LU, Ping-Hung , ZHUANG, Hong
IPC分类号： C09D183/04 , H01L21/312
CPC分类号： C09D183/04 , G03F7/038 , G03F7/0757 , G03F7/091 , H01L21/02126 , H01L21/02216 , H01L21/02282
摘要： The present invention relates to a novel antireflective coating composition for forming an underlayer for a photoresist comprising an acid generator and a novel siloxane polymer, where the siloxane polymer comprises at least one absorbing chromophore and at least one self-crosslinking functionality of structure (1), where m is 0 or 1, W and W are independently a valence bond or a connecting group linking the cyclic ether to the silicon of the polymer and L is selected from hydrogen, W and W, or L and W are combined to comprise a cycloaliphatic linking group linking the cyclic ether to the silicon of the polymer. The invention also relates to a process for imaging the photoresist coated over the novel antireflective coating composition and provides good lithographic results. The invention further relates to a novel siloxane polymer, where the siloxane polymer comprises at least one absorbing chromophore and at least one self-crosslinking functionality of structure (1).
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公开(公告)号：EP1805561A2
公开(公告)日：2007-07-11
申请号：EP05812626.9
申请日：2005-09-15
发明人： WU, Hengpeng , DING-LEE, Shuji , XIANG, Zhong , HISHIDA, Aritaka , SHAN, Jianhui , ZHUANG, Hong
IPC分类号： G03F7/09
CPC分类号： G03F7/091
摘要： The present invention relates to a coating solution comprising a polymer obtained by reacting a glycoluril compound with at least one reactive compound containing at least one hydroxy group and/or at least one acid group, and further where the polymer is soluble in an organic solvent. The invention also relates to a process for imaging a photoresist coated over such a coating composition and to a polymer for the coating composition.
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5.发明授权
公开(公告)号：EP1497697B1
公开(公告)日：2012-08-08
申请号：EP03720384.1
申请日：2003-03-28
发明人： WANAT, Stanley, F. , PLASS, Robert, R. , OBERLANDER, Joseph, E. , MCKENZIE, Douglas , ZHUANG, Hong
CPC分类号： G03F7/0048 , G03F7/0233 , G03F7/0236 , G03F7/0382 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： Disclosed is a photoresist composition comprising: a) at least one film forming resin selected from the group consisting of novolak resins, and polyhydroxystyrenes; b) at least one photoactive compound or photoacid generator; and c) a solvent composition comprising at least one solvent selected from the group consisting of acetals and ketals. Also disclosed is a photoresist composition comprising a polycarbonate resin and a solvent composition comprising at least one solvent selected from the group consisting of acetals and ketals. Also disclosed is a process for imaging a photoresist composition, comprising the steps of: a) coating a suitable substrate with any of the aforementioned photoresist compositions; b) baking the substrate to substantially remove the solvent; c) imagewise irradiating the photoresist film; and d) removing the imagewise exposed or, alternatively, the unexposed areas of the coated substrate with a suitable developer.
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6.发明公开
公开(公告)号：EP1877865A2
公开(公告)日：2008-01-16
申请号：EP06744634.4
申请日：2006-03-10
发明人： CHEN, Chunwei , LU, Ping-Hung , ZHUANG, Hong , NEISSER, Mark
CPC分类号： G03F7/0226 , G03F7/0047 , G03F7/0392 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/151
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.
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公开(公告)号：EP1877864A2
公开(公告)日：2008-01-16
申请号：EP06727393.8
申请日：2006-03-10
发明人： CHEN, Chunwei , LU, Ping-Hung , ZHUANG, Hong , NEISSER, Mark
CPC分类号： G03F7/0047 , G03F7/027 , G03F7/0382 , Y10S430/106
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizeable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator.
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公开(公告)号：EP2121857B1
公开(公告)日：2014-06-04
申请号：EP08709863.8
申请日：2008-02-15
发明人： WU, Hengpeng , KIM, Wookyu , ZHUANG, Hong , LU, PingHung , NEISSER, Mark , ABDALLAH, David , ZHANG, Ruzhi
IPC分类号： C09D183/04 , H01L21/312 , C08G77/06
CPC分类号： C09D183/04 , C08G77/06
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公开(公告)号：EP2181166A2
公开(公告)日：2010-05-05
申请号：EP08789018.2
申请日：2008-07-30
发明人： ZHUANG, Hong , YAO, Huirong , WU, Hengpeng , NEISSER, Mark , LIU, Weihong , SHAN, Jianhui , XIANG, Zhong
IPC分类号： C09D163/00 , C09D133/00 , G03F7/09
CPC分类号： C09D163/00 , C09D133/06 , C09D167/00 , G03F7/091
摘要： The present invention relates to an underlayer coating composition capable of being crosslinked comprising a polymer, a compound capable of generating a strong acid, and optionally a crosslinker, where the polymer comprises at least one absorbing chromophore and at least one moiety selected from an epoxy group, an aliphatic hydroxy group and mixtures thereof. The invention further relates to a process of imaging the underlayer coating compositions.
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公开(公告)号：EP2152822A2
公开(公告)日：2010-02-17
申请号：EP08750949.3
申请日：2008-05-09
发明人： ZHUANG, Hong , SHAN, Jianhui , XIANG, Zhong , WU, Hengpeng , YIN, Jian
IPC分类号： C09D167/00 , C09D171/00 , G03F7/09 , H01L21/00
CPC分类号： G03F7/091 , C08G63/20 , C08G65/2615 , C08L67/00 , C08L71/00 , C09D167/00 , C09D171/00 , C08L2666/22 , C08L2666/18
摘要： The present invention relates to anti reflective coating compositions.
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