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1.发明授权
公开(公告)号：EP2158279B1
公开(公告)日：2012-08-29
申请号：EP08751011.1
申请日：2008-05-20
发明人： HOULIHAN, Francis , ABDALLAH, David , RAHMAN, M., Dalil , MCKENZIE, Douglas , ZHANG, Ruzhi , TIMKO, Allen, G. , KIM, Wookyu , LU, Ping-Hung
IPC分类号： C09D165/00
CPC分类号： C09D165/00 , G03F7/091 , H01L21/0276
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公开(公告)号：EP1297386B1
公开(公告)日：2006-12-27
申请号：EP01934000.9
申请日：2001-05-22
发明人： XU, Pingyong , LU, Ping-Hung , DAMMEL, Ralph, R.
IPC分类号： G03F7/038
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/106 , Y10S430/122
摘要： A chemically-amplified, negative-acting, radiation-sensitive photoresist composition that is developable in an alkaline medium, the photoresist comprising: a) a phenolic film-forming polymeric binder resin having ring bonded hydroxyl groups; b) a photoacid generator that forms an acid upon exposure to radiation, in an amount sufficient to initiate crosslinking of the film-forming binder resin; c) a crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises an etherified aminoplast polymer or oligomer; d) a second crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises either 1) a hydroxy substituted- or 2) a hydroxy C1-C4 alkyl substituted- C1-C12 alkyl phenol, wherein the total amount of the crosslinking agents from steps c) and d) is an effective crosslinking amount; and e) a photoresist solvent, and a process for producing a microelectronic device utilizing such a photoresist composition.
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公开(公告)号：EP1042381B1
公开(公告)日：2006-08-23
申请号：EP98965207.8
申请日：1998-12-01
CPC分类号： G03F7/0236 , C08G8/00 , C08G8/08
摘要： The present invention provides a method for producing a film forming, fractionated novolak resin having consistent molecular weight and superior performance in photoresist composition, by isolating such a novolak resin fraction. A method is also provided for producing photoresist composition from such a fractionated novolak resin and for producing semiconductor devices using such a photoresist composition.
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公开(公告)号：EP2052293B1
公开(公告)日：2013-03-13
申请号：EP07789633.0
申请日：2007-08-07
发明人： WU, Hengpeng , XIANG, Zhong , ZHUANG, Hong , SHAN, Jianhui , YIN, Jian , YAO, Huirong , LU, Ping-Hung
IPC分类号： G03F7/09
CPC分类号： G03F7/091 , Y10S438/952
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公开(公告)号：EP2122418A2
公开(公告)日：2009-11-25
申请号：EP08702204.2
申请日：2008-01-03
发明人： ZHANG, Ruzhi , LU, Ping-Hung
IPC分类号： G03F7/42
摘要： The invention relates to compositions and methods of removing silicon- based anti-reflective coatings/hardmask layers.
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公开(公告)号：EP2035518A2
公开(公告)日：2009-03-18
申请号：EP07734993.4
申请日：2007-06-20
发明人： ZHANG, Ruzhi , NEISSER, Mark, O. , KIM, Woo-Kyu , ABDALLAH, David, J. , HOULIHAN, Francis , LU, Ping-Hung , ZHUANG, Hong
IPC分类号： C09D183/04 , H01L21/312
CPC分类号： C09D183/04 , G03F7/038 , G03F7/0757 , G03F7/091 , H01L21/02126 , H01L21/02216 , H01L21/02282
摘要： The present invention relates to a novel antireflective coating composition for forming an underlayer for a photoresist comprising an acid generator and a novel siloxane polymer, where the siloxane polymer comprises at least one absorbing chromophore and at least one self-crosslinking functionality of structure (1), where m is 0 or 1, W and W are independently a valence bond or a connecting group linking the cyclic ether to the silicon of the polymer and L is selected from hydrogen, W and W, or L and W are combined to comprise a cycloaliphatic linking group linking the cyclic ether to the silicon of the polymer. The invention also relates to a process for imaging the photoresist coated over the novel antireflective coating composition and provides good lithographic results. The invention further relates to a novel siloxane polymer, where the siloxane polymer comprises at least one absorbing chromophore and at least one self-crosslinking functionality of structure (1).
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公开(公告)号：EP2122418B1
公开(公告)日：2012-08-08
申请号：EP08702204.2
申请日：2008-01-03
发明人： ZHANG, Ruzhi , LU, Ping-Hung
IPC分类号： G03F7/42
摘要： The invention relates to compositions and methods of removing silicon- based anti-reflective coatings/hardmask layers.
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8.发明公开
公开(公告)号：EP2158279A2
公开(公告)日：2010-03-03
申请号：EP08751011.1
申请日：2008-05-20
发明人： HOULIHAN, Francis , ABDALLAH, David , RAHMAN, M., Dalil , MCKENZIE, Douglas , ZHANG, Ruzhi , TIMKO, Allen, G. , KIM, Wookyu , LU, Ping-Hung
IPC分类号： C09D165/00
CPC分类号： C09D165/00 , G03F7/091 , H01L21/0276
摘要： The present invention relates to an organic spin coatable anti reflective coating composition comprising a polymer comprising at least one unit with 3 or more fused aromatic rings in the backbone of the polymer and at least one unit with an aliphatic moiety in the backbone of the polymer. The invention further relates to a process for imaging the present composition.
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9.发明公开
公开(公告)号：EP1877865A2
公开(公告)日：2008-01-16
申请号：EP06744634.4
申请日：2006-03-10
发明人： CHEN, Chunwei , LU, Ping-Hung , ZHUANG, Hong , NEISSER, Mark
CPC分类号： G03F7/0226 , G03F7/0047 , G03F7/0392 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/151
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.
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公开(公告)号：EP1877864A2
公开(公告)日：2008-01-16
申请号：EP06727393.8
申请日：2006-03-10
发明人： CHEN, Chunwei , LU, Ping-Hung , ZHUANG, Hong , NEISSER, Mark
CPC分类号： G03F7/0047 , G03F7/027 , G03F7/0382 , Y10S430/106
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizeable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator.
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