摘要:
The present invention provides a bonding material and a method of bonding for metal bonding at a bonding interface capable of a higher bonding strength at a lower temperature without application of pressure, compared to a bonding material of metal particles having an average particle size of not greater than 100 nm. An electrically conductive bonding material including (A) silver particles (202), (B) silver oxide (203), and (C) a dispersant including organic material containing not more than 30 carbon atoms as essential components, wherein a total amount of (A) the silver powder, (B) the silver oxide powder, and (C) the dispersant including an organic material containing not more than 30 carbon atoms is in a range of 99.0% to 100% by weight, is provided. In other words, no resin binder is contained.
摘要:
According to the present invention an electrically conductive bonding material comprises silver particles (202), silver oxides particles (203), a dispersant comprising an organic material containing not more than 30 carbon atoms, and an organic solvent having a boiling point of not higher than 350°C as essential components. The total amount of the silver particles (202), the silver oxide particles (203), the dispersant, and the organic solvent is 100 mass parts and an amount of the organic solvent is not more than 90 mass parts. The silver particles (202) are in flake form; and the total amount of the silver particles (202), the silver oxide particles (203), the dispersant, and the organic solvent is in a range of 99.0% to 100% by weight.
摘要:
Metallpaste enthaltend (A) 75 bis 90 Gew.-% wenigstens eines Metalls, das in Form von Partikeln vorliegt, die ein Coating aufweisen, das wenigstens eine organische Verbindung enthält, (B) 0 bis 12 Gew.-% wenigstens eines Metallprecursors, (C) 6 bis 20 Gew.-% eines Gemischs mindestens zweier organischer Lösemittel und (D) 0 bis 10 Gew.-% wenigstens eines Sinterhilfsmittels, dadurch gekennzeichnet, dass das Lösemittelgemisch (C) zu 30 bis 60 Gew.-% aus mindestens einem mit Ausnahme einer Methylsubsitution am vorletzten C-Atom unsubstituierten 1-Hydroxyalkan mit 16-20 C-Atomen besteht.
摘要:
A method that in one embodiment is useful in bonding a first substrate (103) to a second substrate (303) includes forming a layer including metal over the first substrate. The layer including metal in one embodiment surrounds a semiconductor device, which can be a micro electromechanical system (MEMS) device. On the second substrate (303) is formed a first layer comprising silicon (401). A second layer (403) comprising germanium and silicon is formed on the first layer. A third layer (405) comprising germanium is formed on the second layer. The third layer is brought into contact with the layer including metal. Heat (and pressure in some embodiments) is applied to the third layer and the layer including metal to form a mechanical bond material between the first substrate and the second substrate in which the mechanical bond material is electrically conductive. In the case of the mechanical bond surrounding a semiconductor device such as a MEMS, the mechanical bond can be particularly advantageous as a hermetic seal for protecting the MEMS.
摘要:
Ce procédé comporte les étapes a) fournir la première structure (10, 11) et la seconde structure (20, 21), la première structure (10, 11) comportant une surface sur laquelle est formée une couche de silicium ; b) bombarder la couche de silicium par un faisceau (F) d'espèces configuré pour atteindre la surface de la première structure (10, 11), et pour conserver une partie (3a) de la couche de silicium avec une rugosité de surface inférieure à 1 nm RMS à l'issue du bombardement; c) coller la première structure (10, 11) et la seconde structure (2) par une adhésion directe entre la partie (3a) de la couche de silicium conservée lors de l'étape b) et la seconde structure (20, 21), les étapes b) et c) étant exécutées au sein d'une même enceinte soumise à un vide inférieur à 10 -2 mbar.
摘要:
The invention relates to a method for assembling, by molecular adhesion, a first substrate and a second substrate along the contact faces, the contact face of the first substrate having an electrically conductive layer on at least a portion of its surface. The inventive method comprises the following steps: depositing a connecting layer on at least a portion of the electrically conductive layer, said connecting layer being capable of ensuring a molecular adhesion with an area of the contact face of the second substrate and capable of being combined with the electrically conductive layer in order to form a conductive alloy; placing the connecting layer of the first substrate in contact with the area of the contact face of the second substrate and bonding it by molecular adhesion; transforming, on all or a portion of its width, all or part of the electrically conductive layer with all or part of the connecting layer and with at least a portion of the width of the area of the contact face over all or part of the surface of the second substrate in order to form a conductive alloy area.
摘要:
The invention relates to an electronic component as well as a semiconductor wafer and a component support for producing said component. The inventive electronic component comprises a semiconductor chip (1) encompassing a top face (2) that is provided with an integrated circuit and a bottom face (3) which is provided with a magnetic layer (7). The top face (5) of a chip support is also provided with a magnetic layer (8). At least one of the two layers (7, 8) is permanently magnetic such that the semiconductor chip is magnetically fixed to the chip support (5).