Method and apparatus for substrate film thickness measurement and substrate processing
    2.
    发明公开
    Method and apparatus for substrate film thickness measurement and substrate processing 有权
    Verfahren und VorrichtungfürSchichtdickenmessung und Substratverarbeitung

    公开(公告)号:EP1108979A2

    公开(公告)日:2001-06-20

    申请号:EP00127374.7

    申请日:2000-12-13

    申请人: EBARA CORPORATION

    IPC分类号: G01B11/06

    摘要: A jet of water in a cylindrical form is supplied from a jet nozzle onto a measurement surface of a substrate to form a column of the water extending between the nozzle and the measurement surface. Light is emitted from an irradiation fiber and transmitted through the column of water to the measurement surface. The light reflected by the measurement surface is received by a light-receiving fiber through the column of water. A measurement calculation unit measures the thickness of a film formed on the substrate, based on the intensity of the reflected light.

    摘要翻译: 将圆柱形的水射流从射流喷嘴供应到基板的测量表面上,以形成在喷嘴和测量表面之间延伸的水柱。 光从照射纤维发射并通过水柱传递到测量表面。 由测量表面反射的光被受光纤通过水柱接收。 测量计算单元基于反射光的强度来测量形成在基板上的膜的厚度。

    Polishing method and polishing apparatus
    7.
    发明公开
    Polishing method and polishing apparatus 审中-公开
    抛光方法和抛光装置

    公开(公告)号:EP2586568A3

    公开(公告)日:2017-10-04

    申请号:EP12007343.2

    申请日:2012-10-25

    申请人: EBARA CORPORATION

    发明人: Kimba, Toshifumi

    摘要: A polishing method capable of obtaining an accurate thickness of a silicon layer during polishing of a substrate and determining an accurate polishing end point of the substrate based on the thickness of the silicon layer obtained. The method includes: calculating relative reflectance by dividing the measured intensity of the infrared ray by predetermined reference intensity; producing spectral waveform representing relationship between the relative reflectance and wavelength of the infrared ray; performing a Fourier transform process on the spectral waveform to determine a thickness of the silicon layer and a corresponding strength of frequency component; and determining a polishing end point of the substrate based on a point of time when the determined thickness of the silicon layer has reached a predetermined target value.

    摘要翻译: 本发明提供一种研磨方法,该研磨方法能够在研磨基板时得到正确的硅层厚度,并且基于所得到的硅层的厚度来确定基板的精密研磨终点。 该方法包括:通过将测量的红外线的强度除以预定的参考强度来计算相对反射率; 产生代表红外线的相对反射率和波长之间关系的光谱波形; 对所述频谱波形执行傅里叶变换处理以确定所述硅层的厚度和相应的频率分量的强度; 以及基于所确定的硅层的厚度已经达到预定目标值的时间点来确定衬底的抛光终点。

    Polishing method and polishing apparatus
    8.
    发明公开
    Polishing method and polishing apparatus 审中-公开
    Polierverfahren und Poliervorrichtung

    公开(公告)号:EP2586568A2

    公开(公告)日:2013-05-01

    申请号:EP12007343.2

    申请日:2012-10-25

    申请人: EBARA CORPORATION

    发明人: Kimba, Toshifumi

    IPC分类号: B24B49/12 B24B37/013

    摘要: A polishing method capable of obtaining an accurate thickness of a silicon layer during polishing of a substrate and determining an accurate polishing end point of the substrate based on the thickness of the silicon layer obtained. The method includes: calculating relative reflectance by dividing the measured intensity of the infrared ray by predetermined reference intensity; producing spectral waveform representing relationship between the relative reflectance and wavelength of the infrared ray; performing a Fourier transform process on the spectral waveform to determine a thickness of the silicon layer and a corresponding strength of frequency component; and determining a polishing end point of the substrate based on a point of time when the determined thickness of the silicon layer has reached a predetermined target value.

    摘要翻译: 一种抛光方法,其能够在抛光基板期间获得准确的硅层厚度,并且基于获得的硅层的厚度确定基板的精确抛光终点。 该方法包括:通过将测量的红外线强度除以预定参考强度来计算相对反射率; 产生表示红外线的相对反射率和波长之间的关系的光谱波形; 对光谱波形执行傅立叶变换处理以确定硅层的厚度和相应的频率分量强度; 并且基于所确定的硅层的厚度达到预定目标值的时间点来确定衬底的抛光终点。