公开(公告)号：EP3262694A4

公开(公告)日：2018-01-24

申请号：EP15906439

申请日：2015-10-20

Applicant: GOERTEK INC

Inventor： ZOU QUANBO ,  WANG ZHE

IPC: H01L33/00 ,  H01L25/075

CPC classification number: H01L33/0079 ,  H01L25/0753 ,  H01L2224/95

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LEDs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.

公开(公告)号：EP3218939A4

公开(公告)日：2017-10-25

申请号：EP15901411

申请日：2015-08-18

Applicant: GOERTEK INC

Inventor： ZOU QUANBO ,  WANG ZHE

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L21/67144 ,  H01L24/83 ,  H01L24/95 ,  H01L27/15 ,  H01L33/0095 ,  H01L33/405 ,  H01L2924/12042

Abstract: A pre-screening method, manufacturing method, device and electronic apparatus of micro-LED. The method for pre-screening defect micro-LEDs comprises: obtaining a defect pattern of defect micro-LEDs on a laser-transparent substrate (S6100); and irradiating the laser-transparent substrate with laser from the laser-transparent substrate side in accordance with the defect pattern (S6200), to lift-off the defect micro-LEDs from the laser-transparent substrate.

公开(公告)号：EP3257072A4

公开(公告)日：2018-02-07

申请号：EP15903360

申请日：2015-09-09

Applicant: GOERTEK INC

Inventor： ZOU QUANBO ,  WANG ZHE

IPC: H01L21/677 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/0095 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/83 ,  H01L2224/98 ,  H01L2933/0066

Abstract: A repairing method, manufacturing method, device and electronics apparatus of micro-LED. The method for repairing a micro-LED comprises: bringing a known-good micro-LED (204) on a conductive pick-up head (205) into contact with a first pad on a defective position of a receiving substrate (209), wherein the conductive pick-up head (205) and the known-good micro-LED (204) are bonded via a conductive adhesive (206); locally joule heating a first bonding layer (214) through the conductive pick-up head (205), to melt the first bonding layer (214), wherein the first bonding layer (214) is provided between the known-good micro-LED (204) and the first pad; and lifting up the conductive pick-up head (205) after the first bonding layer (214) is cooled, leaving the known-good micro-LED (204) on the receiving substrate.

公开(公告)号：EP3248226A4

公开(公告)日：2018-02-07

申请号：EP15907618

申请日：2015-11-04

Applicant: GOERTEK INC

Inventor： ZOU QUANBO ,  LU MANEN ,  WANG ZHE

IPC: H01L33/00 ,  H01L33/20

CPC classification number: H01L33/0095 ,  H01L33/20

Abstract: A transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LEDs comprises: forming a mask layer on the backside of a laser-transparent original substrate, wherein micro-LEDs are formed on the front-side of the original substrate (s4100); bringing the micro-LEDs on the original substrate in contact with preset pads on a receiving substrate (s4200); and irradiating the original substrate from the original substrate side with laser through the mask layer, to lift-off micro-LEDs from the original substrate (s4300).

公开(公告)号：EP3218938A4

公开(公告)日：2017-09-20

申请号：EP15901410

申请日：2015-08-18

Applicant: GOERTEK INC

Inventor： ZOU QUANBO ,  WANG ZHE

IPC: H01L33/00 ,  H01L23/00 ,  H01L25/075

CPC classification number: H01L33/0095 ,  H01L24/95 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/62 ,  H01L2933/0066

Abstract: A repairing method, manufacturing method, device and electronic apparatus of micro-LED are disclosed. The method for repairing micro-LED defects comprises: obtaining a micro-LED defect pattern on a receiving substrate; forming micro-LEDs (703b) corresponding to the defect pattern on a laser-transparent repair carrier substrate (707); aligning the micro-LEDs (703b) on the repair carrier substrate (707) with defect positions on the receiving substrate, and bringing the micro-LEDs (703b) into contact with pads at the defect positions; and irradiating the repair carrier substrate with a laser from the repair carrier substrate side, to lift-off the micro-LEDs from the repair carrier substrate (707).

Abstract translation: 公开了一种微型LED的修复方法，制造方法，装置和电子设备。 所述修复微LED缺陷的方法包括：获取接收基板上的微LED缺陷图案; 在激光透明修复载体衬底（707）上形成对应于缺陷图案的微型LED（703b）; 使修复载体基板（707）上的微型LED（703b）与接收基板上的缺陷位置对准，并使微型LED（703b）与缺陷位置处的焊盘接触; 以及用修复载体衬底侧的激光照射修复载体衬底，以从修复载体衬底（707）剥离微型LED。

公开(公告)号：EP3323145A4

公开(公告)日：2018-05-23

申请号：EP15897981

申请日：2015-07-14

Applicant: GOERTEK INC

Inventor： ZOU QUANBO ,  WANG ZHE

IPC: H01L21/70 ,  H01L33/00

CPC classification number: H01L24/97 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/81005 ,  H01L2224/81143 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/83143 ,  H01L2224/83851 ,  H01L2224/95001 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2924/12041 ,  H01L2933/0066

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate; irradiating the original substrate with laser from the original substrate side to lift-off the micro-LEDs from the original substrate; bring the micro-LEDs into contact with pads preset on a receiving substrate through a contactless action.

公开(公告)号：EP3221882A4

公开(公告)日：2018-05-02

申请号：EP15897979

申请日：2015-07-14

Applicant: GOERTEK INC

Inventor： ZOU QUANBO ,  WANG ZHE

IPC: H01L21/60 ,  H01L21/66 ,  H01L21/683

CPC classification number: H01L24/97 ,  H01L21/50 ,  H01L21/6835 ,  H01L22/14 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0753 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/2939 ,  H01L2224/32013 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81121 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/81907 ,  H01L2224/83005 ,  H01L2224/83101 ,  H01L2224/83143 ,  H01L2224/83851 ,  H01L2224/83855 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2221/68304 ,  H01L21/78 ,  H01L22/10 ,  H01L2224/83104 ,  H01L2924/014

Abstract: The present invention discloses a assembling method, a manufacturing method, an device and an electronic apparatus of flip-die. The method for assembling a flip-die, comprises: temporarily bonding the flip-die onto a laser-transparent first substrate, wherein bumps of the flip-die are located on the side of the flip-die opposite to the first substrate; aligning the bumps with pads on a receiving substrate; irradiating the original substrate with laser from the first substrate side to lift-off the flip-die from the first substrate; and attaching the flip-die on the receiving substrate. A faster assembly rate can be achieved by using the present invention. A smaller chip size can be achieved by using the present invention. A lower profile can be achieved by using the present invention.

公开(公告)号：EP3186979A4

公开(公告)日：2018-02-28

申请号：EP14900342

申请日：2014-08-27

Applicant: GOERTEK INC

Inventor： WANG ZHE ,  ZOU QUANBO ,  TAO JIFANG

IPC: H04R19/04 ,  H04R1/02 ,  H04R1/08 ,  H04R3/00 ,  H04R19/00

CPC classification number: H04R1/083 ,  H04R1/023 ,  H04R3/007 ,  H04R19/005 ,  H04R19/016 ,  H04R19/04 ,  H04R2201/003

Abstract: The disclosure provides a MEMS device. The MEMS device comprises a printed circuit board, a cover attached to the printed circuit board to form a housing, at least one sound hole formed in the housing, a transducer with a diaphragm inside the housing, and at least one shutter structure. Each shutter structure is mounted to the housing around a respective sound hole. Each shutter structure comprises a moveable component disposed near the inner surface of the housing, the moveable component remains at an open position under regular pressure such that an air flow path from the sound hole to the at least one ventilation hole of the substrate across the moveable component is opened, and moves to a first closed position under a high external pressure to block the at least one ventilation hole and close the air flow path.

公开(公告)号：EP3271953A4

公开(公告)日：2018-02-21

申请号：EP15892223

申请日：2015-05-21

Applicant: GOERTEK INC

Inventor： ZOU QUANBO ,  WANG ZHE

IPC: H01L33/48 ,  H01L33/00

CPC classification number: H01L24/97 ,  H01L24/00 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/81005 ,  H01L2224/81143 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/83143 ,  H01L2224/83851 ,  H01L2224/95001 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2924/12041 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED, comprises: forming micro-LEDs (202) on a laser-transparent original substrate (201), providing an anisotropic conductive layer (203) on a receiving substrate (204), bringing the micro-LEDs (202) into contact with the anisotropic conductive layer (203) on the receiving substrate (204), irradiating the original substrate (201) with laser from the original substrate side to lift-off the micro-LEDs (202) from the original substrate (201), and processing the anisotropic conductive layer (203), to electrically connect the micro-LEDs (202) with the pads (205′) on the receiving substrate (204).

公开(公告)号：EP3271951A4

公开(公告)日：2018-02-21

申请号：EP15892224

申请日：2015-05-21

Applicant: GOERTEK INC

Inventor： ZOU QUANBO ,  WANG ZHE

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L21/67144 ,  H01L21/6835 ,  H01L24/00 ,  H01L25/0753 ,  H01L33/38 ,  H01L33/44 ,  H01L33/52 ,  H01L33/62 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066

Abstract: A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED (402) are disclosed. The method for transferring micro-LED (402) comprises: transferring at least one micro-LED (402) from an original substrate (406) to a support body (412); transferring the at least one micro-LED (402) from the support body (412) to a backup substrate (415); and transferring the at least one micro-LED (402) from the backup substrate (415) to a receiving substrate (417).