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公开(公告)号：EP0971397B1
公开(公告)日：2003-04-23
申请号：EP98955993.5
申请日：1998-11-30
IPC分类号： H01L21/04 , H01L21/265 , H01L21/268
CPC分类号： H01L29/6606 , H01L21/046 , H01L29/1608 , H01L29/861 , Y10T29/41
摘要： A method for activating semiconductor impurities, which comprises irradiating an impurity-doped SiC substrate (1) or thin film (2) either with laser beams (5) having a wavelength greater than the one which causes the band edge absorption of the semiconductor, or with laser beams (5) having a wavelength which causes the same absorption as a result of the vibration of the bond between the impurity element and the element constituting the semiconductor, for example, a wavelength of 9-11 νm. In particular, when SiC is doped with Al, the irradiation is effected with laser beams (5) having a wavelength of 9.5 - 10 νm.
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2.发明公开METHOD AND DEVICE FOR ACTIVATING SEMICONDUCTOR IMPURITIES 有权VERFAHREN UND VORRICHTUNG ZUR BEHANDLUNG VON VERUNREINIGUNGEN IN EINEM HALBLEITER
公开(公告)号：EP0971397A1
公开(公告)日：2000-01-12
申请号：EP98955993.5
申请日：1998-11-30
IPC分类号： H01L21/265 , H01L21/268
CPC分类号： H01L29/6606 , H01L21/046 , H01L29/1608 , H01L29/861 , Y10T29/41
摘要： An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 µm to 11 µm. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 µm to 10 µm.
摘要翻译： 用波长比发生半导体的带边缘吸收波长的波长的激光5照射杂质掺杂的SiC衬底1和SiC薄膜2。激光5的波长可以是 吸收是由杂质元素和构成半导体的元素的结合引起的振动引起的，例如波长为9μm〜11μm。 具体地说，在SiC中掺杂Al的情况下，激光5的波长可以在9.5μm〜10μm的范围内。
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公开(公告)号：EP0971394A1
公开(公告)日：2000-01-12
申请号：EP98936742.0
申请日：1998-08-11
发明人： KITABATAKE, Makoto
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/336 , H01L29/73 , H01L29/78 , H01L21/331 , H01L29/739
CPC分类号： H01L29/7802 , H01L21/7813 , H01L29/1608 , H01L29/165 , H01L29/267 , H01L29/66068 , H01L29/7809
摘要： A MOS transistor is composed of a semiconductor substrate 11 in which a Si thin film 13 is heteroepitaxially grown on a surface of an SiC substrate 12. A source electrode 38 and a drain electrode 34 are so provided that the above SiC substrate 12 is disposed in an output current path. According to this construction, a semiconductor device with a high dielectric strength and current-carrying capacity is achieved.
摘要翻译： MOS晶体管由在SiC衬底12的表面上异质外延生长Si薄膜13的半导体衬底11构成。设置源电极38和漏电极34，使得上述SiC衬底12设置在 输出电流路径。 根据这种结构，可以实现具有高介电强度和电流承载能力的半导体器件。
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公开(公告)号：EP1596434A1
公开(公告)日：2005-11-16
申请号：EP04772945.4
申请日：2004-09-06
CPC分类号： H01L23/3735 , H01L23/3672 , H01L23/4334 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/01004 , H01L2924/0102 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12032 , H01L2924/12036 , H01L2924/1301 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor apparatus includes a semiconductor chip 61 including a power semiconductor device using a wide band gap semiconductor, base materials 62 and 63, first and second intermediate members 65 and 68a, a heat conducting member 66, a radiation fin 67, and an encapsulating material 68 for encapsulating the semiconductor chip 61, the first and second intermediate member 65 and 68a and the heat conducting member 66. The tips of the base materials 62 and 63 work respectively as external connection terminals 62a and 63a. The second intermediate member 68a is made of a material with lower heat conductivity than the first intermediate member 65, and a contact area with the semiconductor chip 61 is larger in the second intermediate member 68a than in the first intermediate member.
摘要翻译： 半导体装置包括：包括使用宽带隙半导体的功率半导体器件的半导体芯片61，基材62和63，第一和第二中间构件65和68a，导热构件66，散热片67和封装材料 68，用于封装半导体芯片61，第一和第二中间构件65和68a以及导热构件66.基体材料62和63的尖端分别作为外部连接端子62a和63a。 第二中间构件68a由导热率比第一中间构件65低的材料制成，并且在第二中间构件68a中与半导体芯片61的接触面积大于第一中间构件中的半导体芯片61的接触面积。
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公开(公告)号：EP0841677B1
公开(公告)日：2001-01-24
申请号：EP97908514.9
申请日：1997-03-26
发明人： HIRAKI, Akio , ITO, Toshimichi , HATTA, Akimitsu , DEGUCHI, Masahiro , EIMORI, Nobuhiro , KITABATAKE, Makoto
CPC分类号： B82Y10/00 , H01J1/312 , H01J2201/30457
摘要： An electron emitting device which efficiently emits electrons by supplying electrons to a p-type diamond layer (13) from an electron supplying layer (12) by impressing a forward bias upon MIS, p-n, and pin structures using diamond layers. In the production process of the electron emitting device, a continuous diamond layer (13) is formed by a vapor synthesizing method and the thickness of the diamond layer is adjusted to a prescribed value by etching. In order to arbitrarily control the electron affinity of the surface of the diamond layer (13), the surface is exposed to vacuum ultraviolet rays, or hydrogen or oxygen plasma.
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6.发明公开
公开(公告)号：EP1056110A1
公开(公告)日：2000-11-29
申请号：EP99902858.2
申请日：1999-02-09
CPC分类号： B82Y10/00 , H01J1/304 , H01J1/312 , H01J9/022 , H01J2329/00
摘要： An electron emitting device includes at least an electron transporting member (1), an electron emitting member (3), and an electric field concentration region (2) formed between the electron transporting member (1) and the electron emitting member (3). For example, the electron transporting member (1) may be a conductive layer, the electric field concentration region (2) may be formed of an insulating layer formed on the conductive layer, and the electron emitting member (3) may be formed of particles provided on the insulating layer. Due to the electric field concentration in the electric field concentration region (2), electrons are easily injected from the electron transporting member (1) to the electron emitting member (3).
摘要翻译： 的电子发射装置包括至少电子传输构件（1）上，以电子（3），以及所形成的电子输送构件（1）和（3）电子发射元件之间的电场集中区域（2）的发光构件。 对于实施例，电子输送构件（1）可以是一个导电层，所述的电场集中区域（2）可被形成在导电层上的绝缘层，并且所述电子发射部件（3）可以形成颗粒的 设置在绝缘层上。 由于电场集中区域（2）中的电场集中，将电子从电子注入输送轻松构件（1）向电子发射部件（3）。
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公开(公告)号：EP0124622A1
公开(公告)日：1984-11-14
申请号：EP83903566.4
申请日：1983-11-10
CPC分类号： G02F1/315 , G02F1/0147
摘要： A transparent prism (13) which has a light input surface (11), a light output surface (12) and a bottom surface (14) on which is provided a reflection control layer (15) which has a higher refractive index than the prism (13) and has a film thickness which is larger than the wavelength of light. When the reflection control layer (15) is formed of a thin film of an electro-optical material ora thin film of heat-sensitive material, light (16) can be reflected or transmitted thereby by controlling an electrical field applied to the control layer (15) in the case of the former material, and by controlling the current supplied to a heating member provided for the control layer (15) in the case of the latter material. This light valve can effect high-speed switching between reflected light (161) and transmitted light (162). Therefore, it is possible to employ the light valve as an optical part, such as a switch or modulatorfor optical communication, or an element of a projection television receiver, or a printer.
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公开(公告)号：EP1286398B1
公开(公告)日：2006-10-04
申请号：EP00976351.7
申请日：2000-11-20
发明人： YOKOGAWA, Toshiya , KITABATAKE, Makoto , KUSUMOTO, Osamu , TAKAHASHI, Kunimasa , UENOYAMA, Takeshi
IPC分类号： H01L29/78 , H01L29/06 , H01L29/778
CPC分类号： H01L29/7813 , H01L21/0455 , H01L29/105 , H01L29/1608 , H01L29/365 , H01L29/66068 , H01L29/7725 , H01L29/78 , H01L29/7828 , H01L29/7838
摘要： P-type active region 12; n-type source/drain regions 13a and 13b; gate insulating film 14 made of a thermal oxide film; gate electrode 15; source/drain electrodes 16a and 16b, are provided over a p-type SiC substrate 11. In the active region 12, p-type heavily doped layers 12a, which are thin enough to create a quantum effect, and thick undoped layers 12b are alternately stacked. When carriers flow, scattering of impurity ions in the active region is reduced, and the channel mobility increases. In the OFF state, a depletion layer expands throughout the active region, and the breakdown voltage increases. As a result of reduction in charges trapped in the gate insulating film or near the interface between the gate insulating film and the active region, the channel mobility further increases.
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公开(公告)号：EP1513195A1
公开(公告)日：2005-03-09
申请号：EP03736213.4
申请日：2003-06-13
CPC分类号： H01L23/49562 , H01L23/49575 , H01L23/62 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/0653 , H01L29/1608 , H01L29/7806 , H01L29/7828 , H01L29/7838 , H01L2224/0603 , H01L2224/371 , H01L2224/40137 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2224/4903 , H01L2224/49113 , H01L2224/84205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/09701 , H01L2924/10253 , H01L2924/10272 , H01L2924/12032 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/181 , H01L2924/2076 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor module comprises independently operable segments 1 (semiconductor elements) on a SiC substrate. Each segment 1 comprises a source electrode pad 2 and a gate electrode pad 3 both provided to the principal surface side of the SiC substrate, and a drain electrode pad provided on the back surface side of the SiC substrate. The semiconductor module further comprises an isolation region such as a trench or a Schottky diode for electrically isolating the adjacent segments 1 from each other. Only electrode pads 2 and 3 of each of the segments 1 determined as conforming items by a test are connected to electrode terminals 41 and 43 , respectively.
摘要翻译： 半导体模块包括在SiC衬底上的可独立操作的段1（半导体元件）。 每个段1包括都设置在SiC衬底的主表面侧的源电极焊盘2和栅电极焊盘3以及设置在SiC衬底的背表面侧上的漏电极焊盘。 半导体模块还包括用于将相邻段1彼此电隔离的隔离区，诸如沟槽或肖特基二极管。 只有通过测试确定为符合项目的每个片段1的电极垫2和3分别连接到电极端子41和43。
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公开(公告)号：EP1427021A1
公开(公告)日：2004-06-09
申请号：EP02765568.7
申请日：2002-09-17
发明人： YAMASHITA, Kenya , KITABATAKE, Makoto , KUSUMOTO, Osamu , TAKAHASHI, Kunimasa , UCHIDA, Masao , MIYANAGA, Ryoko
IPC分类号： H01L29/78
CPC分类号： H01L29/66068 , H01L29/105 , H01L29/1608 , H01L29/365 , H01L29/7725 , H01L29/7828 , H01L29/7838
摘要： A semiconductor device having an accumulation channel SiC-MISFET structure includes a p-type SiC layer 10 formed on an SiC substrate, an n-type channel layer 20 , a gate insulating film 11 , a gate electrode 12 , and n-type source and drain layers 13a and 13b . The channel layer 20 includes an undoped layer 22 and a δ doped layer 21 which is formed in the vicinity of the lower end of the undoped layer 22 . Since the channel layer 20 includes the high-concentration δ doped layer 21 in its deeper portion, the electric field in the surface region of the channel layer is weakened, thereby allowing the current driving force to increase.
摘要翻译： 具有积累通道SiC-MISFET结构的半导体器件包括形成在SiC衬底，n型沟道层20，栅极绝缘膜11，栅电极12和n型源上的p型SiC层10以及 漏极层13a和13b。 沟道层20包括未掺杂层22和形成在未掺杂层22的下端附近的δ掺杂层21.由于沟道层20在其较深部分包括高浓度δ掺杂层21， 沟道层表面区域中的电场减弱，从而允许电流驱动力增加。
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