公开(公告)号：EP2873094A4

公开(公告)日：2016-04-13

申请号：EP13816666

申请日：2013-07-09

申请人： MICRON TECHNOLOGY INC

发明人： GROOTHUIS STEVEN ,  LI JIAN ,  LUO SHIJIAN

IPC分类号： H01L23/373 ,  H01L23/12 ,  H01L23/31 ,  H01L23/34 ,  H01L23/367 ,  H01L23/433 ,  H01L25/065 ,  H01L25/18

CPC分类号： H01L23/367 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3185 ,  H01L23/34 ,  H01L23/433 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/00014

摘要： Semiconductor device packages comprise a first semiconductor device comprising a heat-generating region located on at least one end thereof. A second semiconductor device is attached to the first semiconductor device. At least a portion of the heat-generating region extends laterally beyond at least one corresponding end of the second semiconductor device. A thermally insulating material at least partially covers the end of the second semiconductor device. Methods of forming semiconductor device packages comprise attaching a second semiconductor device to a first semiconductor device. The first semiconductor device comprises a heat-generating region at an end thereof. At least a portion of the heat-generating region extends laterally beyond an end of the second semiconductor device. The end of the second semiconductor device is at least partially covered with a thermally insulating material.

公开(公告)号：EP2780939A4

公开(公告)日：2015-07-08

申请号：EP12849421

申请日：2012-11-12

申请人： MICRON TECHNOLOGY INC

发明人： GROOTHUIS STEVEN K ,  LI JIAN ,  ZHANG HAOJUN ,  SILVESTRI PAUL A ,  LI XIAO ,  LUO SHIJIAN ,  ENGLAND LUKE G ,  KEETH BRENT ,  GANDHI JASPREET S

IPC分类号： H01L23/34 ,  H01L21/8242 ,  H01L23/36 ,  H01L23/367 ,  H01L23/373 ,  H01L23/42 ,  H01L25/065 ,  H01L25/18 ,  H01L27/108

CPC分类号： H01L23/36 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/42 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06589 ,  H01L2924/15311

公开(公告)号：EP3170198A4

公开(公告)日：2018-03-14

申请号：EP15822104

申请日：2015-06-25

申请人： MICRON TECHNOLOGY INC

发明人： VADHAVKAR SAMEER S ,  LI XIAO ,  GROOTHUIS STEVEN K ,  LI JIAN ,  GANDHI JASPREET S ,  DEDDERIAN JAMES M ,  HEMBREE DAVID R

IPC分类号： H01L25/065 ,  H01L21/48 ,  H01L21/50 ,  H01L21/56 ,  H01L23/04 ,  H01L23/36 ,  H01L23/367 ,  H01L25/07

CPC分类号： H01L25/50 ,  H01L21/4882 ,  H01L21/50 ,  H01L21/563 ,  H01L23/04 ,  H01L23/36 ,  H01L23/3675 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/167 ,  H01L2224/16145 ,  H01L2225/06568 ,  H01L2225/06589

摘要： A semiconductor die assembly having high efficiency thermal paths. In one embodiment, the semiconductor die assembly comprises a package support substrate, a first semiconductor die having a peripheral region and a stacking region, and a second semiconductor die attached to the stacking region of the first die such that the peripheral region is lateral of the second die. The assembly further includes a thermal transfer unit having a base attached to the peripheral region of the first die, a cover attached to the base by an adhesive, and a cavity defined by at least cover, wherein the second die is within the cavity. The assembly also includes an underfill in the cavity, wherein a fillet portion of the underfill extends a distance up along a portion of the footing and upward along at least a portion of the base.

公开(公告)号：EP3170200A4

公开(公告)日：2018-01-24

申请号：EP15822244

申请日：2015-06-25

申请人： MICRON TECHNOLOGY INC

发明人： VADHAVKAR SAMEER S ,  LI XIAO ,  GROOTHUIS STEVEN K ,  LI JIAN ,  GANDHI JASPREET S ,  DERDERIAN JAMES M ,  HEMBREE DAVID R

IPC分类号： H01L25/065 ,  H01L23/04 ,  H01L23/28 ,  H01L23/367 ,  H01L23/48

CPC分类号： H01L25/50 ,  H01L21/50 ,  H01L21/563 ,  H01L23/04 ,  H01L23/3675 ,  H01L23/44 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/1134 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17519 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/2939 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83104 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/8388 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/156 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/1815 ,  H01L2924/0715 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/00

摘要： Method for packaging a semiconductor die assemblies. In one embodiment, a method is directed to packaging a semiconductor die assembly having a first die and a plurality of second dies arranged in a stack over the first die, wherein the first die has a peripheral region extending laterally outward from the stack of second dies. The method can comprise coupling a thermal transfer structure to the peripheral region of the first die and flowing an underfill material between the second dies. The underfill material is flowed after coupling the thermal transfer structure to the peripheral region of the first die such that the thermal transfer structure limits lateral flow of the underfill material.

公开(公告)号：EP3127149A4

公开(公告)日：2017-09-20

申请号：EP15772304

申请日：2015-03-31

申请人： MICRON TECHNOLOGY INC

发明人： LI JIAN ,  GROOTHUIS STEVEN K

IPC分类号： H01L23/12 ,  H01L23/00 ,  H01L23/367 ,  H01L23/498 ,  H01L25/065

CPC分类号： H01L25/0657 ,  G11C7/04 ,  G11C2207/107 ,  H01L23/3675 ,  H01L23/49827 ,  H01L23/49833 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1319 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/1659 ,  H01L2924/16747 ,  H01L2924/16787 ,  H01L2924/01047