公开(公告)号：EP1889285A4

公开(公告)日：2012-07-04

申请号：EP06752168

申请日：2006-05-04

Applicant: MICRON TECHNOLOGY INC

Inventor： WOOD ALAN G ,  HIATT WILLIAM M ,  HEMBREE DAVID R

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/498

CPC classification number: H01L21/76898 ,  H01L21/4885 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/4951 ,  H01L23/4985 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L24/78 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/86 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05571 ,  H01L2224/06102 ,  H01L2224/06136 ,  H01L2224/11003 ,  H01L2224/1131 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/2518 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/4824 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/78301 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/85001 ,  H01L2224/851 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19042 ,  Y10T29/53187 ,  Y10T29/53209 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2224/83851 ,  H01L2224/05552

Abstract: A semiconductor component includes a semiconductor substrate having at least one conductive interconnect on the backside thereof bonded to an inner surface of a substrate contact. A stacked semiconductor component includes multiple semiconductor components in a stacked array having bonded connections between conductive interconnects on adjacent components. An image sensor semiconductor component includes a semiconductor substrate having light detecting elements on the circuit side, and conductive interconnects on the backside.

公开(公告)号：EP3170198A4

公开(公告)日：2018-03-14

申请号：EP15822104

申请日：2015-06-25

Applicant: MICRON TECHNOLOGY INC

Inventor： VADHAVKAR SAMEER S ,  LI XIAO ,  GROOTHUIS STEVEN K ,  LI JIAN ,  GANDHI JASPREET S ,  DEDDERIAN JAMES M ,  HEMBREE DAVID R

IPC: H01L25/065 ,  H01L21/48 ,  H01L21/50 ,  H01L21/56 ,  H01L23/04 ,  H01L23/36 ,  H01L23/367 ,  H01L25/07

CPC classification number: H01L25/50 ,  H01L21/4882 ,  H01L21/50 ,  H01L21/563 ,  H01L23/04 ,  H01L23/36 ,  H01L23/3675 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/167 ,  H01L2224/16145 ,  H01L2225/06568 ,  H01L2225/06589

Abstract: A semiconductor die assembly having high efficiency thermal paths. In one embodiment, the semiconductor die assembly comprises a package support substrate, a first semiconductor die having a peripheral region and a stacking region, and a second semiconductor die attached to the stacking region of the first die such that the peripheral region is lateral of the second die. The assembly further includes a thermal transfer unit having a base attached to the peripheral region of the first die, a cover attached to the base by an adhesive, and a cavity defined by at least cover, wherein the second die is within the cavity. The assembly also includes an underfill in the cavity, wherein a fillet portion of the underfill extends a distance up along a portion of the footing and upward along at least a portion of the base.

公开(公告)号：EP3170200A4

公开(公告)日：2018-01-24

申请号：EP15822244

申请日：2015-06-25

Applicant: MICRON TECHNOLOGY INC

Inventor： VADHAVKAR SAMEER S ,  LI XIAO ,  GROOTHUIS STEVEN K ,  LI JIAN ,  GANDHI JASPREET S ,  DERDERIAN JAMES M ,  HEMBREE DAVID R

IPC: H01L25/065 ,  H01L23/04 ,  H01L23/28 ,  H01L23/367 ,  H01L23/48

CPC classification number: H01L25/50 ,  H01L21/50 ,  H01L21/563 ,  H01L23/04 ,  H01L23/3675 ,  H01L23/44 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/1134 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17519 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/2939 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83104 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/8388 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/156 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/1815 ,  H01L2924/0715 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/00

Abstract: Method for packaging a semiconductor die assemblies. In one embodiment, a method is directed to packaging a semiconductor die assembly having a first die and a plurality of second dies arranged in a stack over the first die, wherein the first die has a peripheral region extending laterally outward from the stack of second dies. The method can comprise coupling a thermal transfer structure to the peripheral region of the first die and flowing an underfill material between the second dies. The underfill material is flowed after coupling the thermal transfer structure to the peripheral region of the first die such that the thermal transfer structure limits lateral flow of the underfill material.

公开(公告)号：EP1018023A4

公开(公告)日：2003-07-23

申请号：EP98908647

申请日：1998-02-11

Applicant: MICRON TECHNOLOGY INC

Inventor： HEMBREE DAVID R ,  FARNWORTH WARREN M ,  AKRAM SALMAN ,  WOOD ALAN G ,  DOHERTY C PATRICK ,  KRIVY ANDY J

IPC: G01R1/073 ,  G01R31/28 ,  G01R31/316

CPC classification number: G01R1/073 ,  G01R31/2886

Abstract: A probe card (10) for testing semiconductor wafers (12), and a method and system (82) for testing wafers (12) using the probe card (10) are provided. The probe card (10) includes an interconnect substrate (16) having contact members (20) for establishing electrical communication with contact locations (15) on the wafer (12). The probe card (10) also includes a membrane (18) for physically and electrically connecting the interconnect substrate (16) to the testing apparatus (78), and a compressible member (28) for cushioning the pressure exerted on the interconnect substrate (16) by the testing apparatus (78).

Abstract translation: 探针卡（10）用于半导体晶片（12）的测试，半导体晶片（12）具有多个具有多个接触位置的半导体晶片。 晶圆支撑电路朝上，与探头接触。 探针卡包括互连衬底（16）和膜（18）。 衬底包括被配置为接触半导体晶片的接触位置的接触构件（20）的图案。 膜将互连基板物理和电连接到安装到测试端口的探针卡夹具（22）。 膜安装板（24）将膜固定到固定装置上。 力施加机构（32）和弹簧加载力施加构件（34）与卡相关联。

公开(公告)号：EP3127151A4

公开(公告)日：2017-10-04

申请号：EP15773393

申请日：2015-03-30

Applicant: MICRON TECHNOLOGY INC

Inventor： KOOPMANS MICHAEL ,  LUO SHIJIAN ,  HEMBREE DAVID R

IPC: H01L23/34 ,  H01L23/00 ,  H01L23/367 ,  H01L23/48 ,  H01L23/498 ,  H01L23/522 ,  H01L23/552 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

CPC classification number: H01L25/0652 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/5226 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/15156 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/014 ,  H01L2924/01047

公开(公告)号：EP2016607A4

公开(公告)日：2011-06-15

申请号：EP07749404

申请日：2007-01-29

Applicant: MICRON TECHNOLOGY INC

Inventor： HEMBREE DAVID R ,  WOOD ALAN G

IPC: H01L23/48 ,  H01L21/60 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L24/16 ,  G01R1/06716 ,  G01R1/07307 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02125 ,  H01L2224/0233 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/0333 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45116 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45684 ,  H01L2224/45698 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/4899 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10155 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45164 ,  H01L2924/013 ,  H01L2924/00013

公开(公告)号：EP1872387A4

公开(公告)日：2010-08-25

申请号：EP06739005

申请日：2006-03-20

Applicant: MICRON TECHNOLOGY INC

Inventor： HEMBREE DAVID R

IPC: H01L23/49

CPC classification number: H01L25/0657 ,  B23K20/004 ,  B23K20/005 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/50 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48471 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/8121 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/85043 ,  H01L2224/85045 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2224/9202 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/06589 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/20751 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3025 ,  H05K3/4046 ,  H05K2201/10287 ,  H05K2203/049 ,  Y10T29/49117 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49162 ,  Y10T29/49169 ,  Y10T29/53213 ,  H01L2924/20752 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: A method for fabricating a semiconductor component with a through wire interconnect includes the step of providing a substrate having a circuit side, a back side, and a through via. The method also includes the steps of: threading a wire through the via, forming a contact on the wire on the back side, forming a bonded contact on the wire on the circuit side, and then severing the wire from the bonded contact. The through wire interconnect includes the wire in the via, the contact on the back side and the bonded contact on the circuit side. The contact on the back side, and the bonded contact on the circuit side, permit multiple components to be stacked with electrical connections between adjacent components. A system for performing the method includes the substrate with the via, and a wire bonder having a bonding capillary configured to thread the wire through the via, and form the contact and the bonded contact. The semiconductor component can be used to form chip scale components, wafer scale components, stacked components, or interconnect components for electrically engaging or testing other semiconductor components.

Abstract translation: 用于通过导线互连制造半导体部件的方法包括提供具有电路侧，背面和贯通孔的基板的步骤。 该方法还包括以下步骤：将导线穿过通孔，在背面的导线上形成接触，在电路侧的导线上形成接合接触，然后将线从接合接触件断开。 通线互连包括通孔中的导线，背侧的触点和电路侧的接合触点。 背面的触点和电路侧的接合触点允许多个部件与相邻部件之间的电连接层叠。 用于执行该方法的系统包括具有通孔的基板和具有接合毛细管的引线接合器，所述接合毛细管被配置为使导线穿过通孔，并形成接触和接合接触。 半导体部件可用于形成用于电接合或测试其它半导体部件的芯片尺寸部件，晶片尺寸部件，堆叠部件或互连部件。

公开(公告)号：EP0826152A4

公开(公告)日：1998-12-23

申请号：EP96915407

申请日：1996-04-30

Applicant: MICRON TECHNOLOGY INC

Inventor： WOOD ALAN G ,  FARNWORTH WARREN M ,  AKRAM SALMAN ,  HEMBREE DAVID R

IPC: G01R31/26 ,  G01R1/04 ,  G01R1/067 ,  G01R1/073 ,  G01R3/00 ,  G01R31/28 ,  H01L21/60 ,  H01L21/66 ,  H01L21/68 ,  H01L23/13 ,  H01L23/498 ,  H05K3/00 ,  H05K3/40 ,  H05K3/42 ,  G01R31/02

CPC classification number: G01R1/07314 ,  G01R1/0433 ,  G01R1/0466 ,  G01R1/0483 ,  G01R3/00 ,  G01R31/2863 ,  G01R31/2886 ,  G01R31/2889 ,  G01R31/2893 ,  H01L21/6835 ,  H01L22/20 ,  H01L23/13 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/48 ,  H01L24/80 ,  H01L24/85 ,  H01L2224/16145 ,  H01L2224/48 ,  H01L2224/85001 ,  H01L2224/85205 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15174 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K3/0058 ,  H05K3/0067 ,  H05K3/4007 ,  H05K3/423 ,  H05K2201/0133 ,  H05K2201/0347 ,  H05K2201/0367 ,  H05K2201/0394 ,  H05K2201/09481 ,  H05K2201/09563 ,  H05K2203/0307 ,  H05K2203/0723 ,  H01L2224/78 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00

Abstract: A method and apparatus for testing unpackaged semiconductor dice includes a mother board (10) and a plurality of interconnects (12) mounted on the mother board (10) and adapted to establish a temporary electrical connection with the dice (14). The interconnects (12) can be formed with a silicon substrate (20) and raised contact members (16) for contacting the bond pads (22) of a die (14). Alternately the interconnects (16) can be formed with micro bump contact members (16) mounted on an insulating film (74). The mother board (10) allows each die (14) to be tested separately for speed and functionality and to also be burn-in tested in parallel using standard burn-in ovens. In an alternate embodiment testing is performed using a mother board/daughter board arrangement. Each daughter board (82) includes interconnects (12) that allow the dice (14) to be tested individually for speed and functionality. Multiple daughter boards (82) can then be mounted to the mother board (10) for burn-in testing using standard burn-in ovens.

Abstract translation: 用于测试未封装半导体晶片的方法和装置包括安装在母板（10）上的母板（10）和多个互连（12），并适于建立与芯片（14）的临时电连接。 互连（12）可以形成有用于接触管芯（14）的接合焊盘（22）的硅衬底（20）和凸起的接触构件（16）。 或者，互连（16）可以形成有安装在绝缘膜（74）上的微凸块接触构件（16）。 母板（10）允许每个模具（14）单独测试速度和功能，并且还可以使用标准老化炉并行测试。 在替代实施例中，使用母板/子板布置进行测试。 每个子板（82）包括允许骰子（14）单独测试速度和功能的互连（12）。 然后可以将多个子板（82）安装到母板（10）上，以使用标准老化烤箱进行老化测试。