公开(公告)号：EP2639820A1

公开(公告)日：2013-09-18

申请号：EP10859611.5

申请日：2010-11-10

申请人： Mitsubishi Electric Corporation

发明人： OISHI, Toshiyuki ,  OTSUKA, Hiroshi ,  YAMANAKA, Koji ,  YAMAUCHI, Kazuhisa ,  HANGAI, Masatake ,  NAKAYAMA, Masatoshi

IPC分类号： H01L21/338 ,  H01L29/778 ,  H01L29/812

CPC分类号： H01L29/2003 ,  H01L21/0254 ,  H01L29/0607 ,  H01L29/0657 ,  H01L29/205 ,  H01L29/7786

摘要： It is an object to attain both high gain and a broad band (that is, to attain both reduction in a gate-drain capacitance and reduction in a source-drain capacitance). Provided is a semiconductor device, including: a GaN channel layer (3) through which electrons travel; a barrier layer (4) which is provided on the GaN channel layer in order to form two-dimensional electron gas in the GaN channel layer and which contains at least any one of In, Al, and Ga and contains N; a gate electrode (8), a source electrode (6), and a drain electrode (7); and a plate (20) formed of a material having polarization, which is provided between the gate electrode (8) and the drain electrode (7), the plate being held in contact with a part of the barrier layer (4).

摘要翻译： 其目的在于获得高增益和宽带（即，获得栅极 - 漏极电容的减小和源极 - 漏极电容的降低）。 提供一种半导体器件，包括：电子行进的GaN沟道层（3）; 阻挡层（4），其设置在所述GaN沟道层上，以在所述GaN沟道层中形成二维电子气，并且其包含In，Al和Ga中的至少任一个并且包含N; 栅电极（8），源电极（6）和漏电极（7）; 以及设置在所述栅极（8）和所述漏电极（7）之间的具有偏振材料的板（20），所述板与所述阻挡层（4）的一部分保持接触。

公开(公告)号：EP2141764A1

公开(公告)日：2010-01-06

申请号：EP08740261.6

申请日：2008-04-11

申请人： Mitsubishi Electric Corporation

发明人： YAMAUCHI, Kazuhisa ,  NAKAYAMA, Masatoshi ,  ONAKA, Yasuhiro ,  HAMADA, Tomokazu ,  ISHIZAKA, Satoru

IPC分类号： H01P5/18 ,  H01P5/16

CPC分类号： H01P5/16 ,  H01P5/185

摘要： Provided is a directional coupler that is capable of improving a directionality of a directional coupler body including four terminals. The directional coupler comprises: the directional coupler body (10) including the four terminals of an input port (11), an output port (12), a coupling port (13), and an isolation port (14); and a combiner (30) for combining powers of an output signal of the coupling port (13) and an output signal of the isolation port (14) of the directional coupler body (10), the directional coupler further comprises a directionality improving circuit (20a) for amplifying or attenuating at least one of the output signal of the coupling port (13) and the output signal of the isolation port (14) before outputting the same, and the combiner (30) combines powers of the output signals amplified or attenuated by the directionality improving circuit (20a).

公开(公告)号：EP2843691A1

公开(公告)日：2015-03-04

申请号：EP12875369.6

申请日：2012-04-27

申请人： Mitsubishi Electric Corporation

发明人： OTSUKA, Hiroshi ,  OISHI, Toshiyuki ,  KUWATA, Eigo ,  YAMASAKI, Takashi ,  KIMURA, Makoto ,  NAKAYAMA, Masatoshi

IPC分类号： H01L21/338 ,  H01L21/822 ,  H01L21/8232 ,  H01L27/04 ,  H01L27/06 ,  H01L27/095 ,  H01L29/778 ,  H01L29/812 ,  H03F3/16

CPC分类号： H01L27/088 ,  H01L23/66 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/0727 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/7786 ,  H01L2223/6611 ,  H01L2924/0002 ,  H03F3/195 ,  H01L2924/00

摘要： An FET chip is configured to include an oscillation suppression circuit that has a gate capacitance C formed between a gate electrode 5c and two-dimensional electron gas, and a channel resistance R between the gate electrode 5c and a source electrode 7c, and therefore the oscillation suppression circuit is loaded by only an FET process to make an MMIC design unnecessary, so that it is possible to attain stabilization of an FET while suppressing increase in cost, and to suppress oscillation.

摘要翻译： FET芯片被配置为包括振荡抑制电路，该振荡抑制电路具有形成在栅电极5c和二维电子气之间的栅极电容C以及栅电极5c和源电极7c之间的沟道电阻R，并且因此振荡 抑制电路仅通过FET工艺被加载，从而不需要MMIC设计，使得可以在抑制成本增加并且抑制振荡的同时实现FET的稳定化。

公开(公告)号：EP2273672A1

公开(公告)日：2011-01-12

申请号：EP08738821.1

申请日：2008-03-25

申请人： Mitsubishi Electric Corporation

发明人： YAMAUCHI, Kazuhisa ,  NOTO, Hifumi ,  INOUE, Akira ,  HAMADA, Tomokazu ,  NAKAYAMA, Masatoshi ,  HORIGUCHI, Kenichi

IPC分类号： H03F1/32 ,  H03F1/07 ,  H03F3/21 ,  H03F3/60

CPC分类号： H03F3/195 ,  H03F1/0288 ,  H03F1/3205 ,  H03F1/565 ,  H03F3/601 ,  H03F2200/387 ,  H03F2200/451

摘要： Provided is a low distortion amplifier which can satisfy both securement of a setting space in a vicinity of a transistor and low impedance. The low distortion amplifier includes a short stub having a leading end thereof short-circuited with a high-frequency short-circuit element and a low-frequency short-circuit element, in which the short stub is connected to a vicinity of at least one of a gate terminal and a drain terminal of the transistor, and includes a plurality of branched lines, the plurality of branched lines each having a leading end thereof short-circuited with the high-frequency short-circuit element and the low-frequency short-circuit element.

摘要翻译： 提供了一种能够满足晶体管附近的设定空间的固定和低阻抗的低失真放大器。 低失真放大器包括其短端与高频短路元件和低频短路元件短路的短路短路短路短路元件，短路短路元件与短路短路元件的至少一个 晶体管的栅极端子和漏极端子，并且包括多条分支线路，所述多条分支线路的前端与高频短路元件和低频短路元件短路 元件。

公开(公告)号：EP2124329A1

公开(公告)日：2009-11-25

申请号：EP06833794.8

申请日：2006-11-30

申请人： Mitsubishi Electric Corporation

发明人： MORI, Kazutomi ,  IYOMASA, Kazuhiro ,  OHTA, Akira ,  SHIMURA, Teruyuki ,  NAKAYAMA, Masatoshi

IPC分类号： H03F1/02 ,  H03F3/19

CPC分类号： H03F1/0277 ,  H03F1/565 ,  H03F3/191 ,  H03F3/211 ,  H03F3/72 ,  H03F2200/318 ,  H03F2200/366 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/456 ,  H03F2203/7233 ,  H03F2203/7236 ,  H03H7/38

摘要： Provided is a high frequency amplifier including two amplifying elements of different element sizes connected in parallel and switching the amplifying elements in accordance with a level of output power. In particular, the high frequency amplifier includes an output matching circuit for matching to characteristic impedance (50 ohms) both when the output power is high and low, and increasing impedance when the turned-off amplifying element is viewed from a connection node on an output side of the two amplifying elements. Consequently, characteristics such as high output power and high efficiency can be achieved and it is possible to prevent an amplified high frequency signal from passing around to a matching circuit on a turned-off amplifying element side.

摘要翻译： 提供了包括并联连接的不同元件尺寸的两个放大元件的高频放大器，并且根据输出功率的电平来切换放大元件。 特别地，高频放大器包括输出匹配电路，用于在输出功率高和低时匹配特性阻抗（50欧姆），以及当从输出端上的连接节点观察截止放大元件时增加阻抗 一侧的两个放大元件。 因此，可以实现诸如高输出功率和高效率的特性，并且可以防止放大的高频信号在关闭放大元件侧传播到匹配电路。