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    Method for manufacturing thin film capacitor and thin film capacitor obtained by the same
    4.
    发明公开
    Method for manufacturing thin film capacitor and thin film capacitor obtained by the same 审中-公开
    一种用于制造薄膜电容器和由此方法获得的薄膜电容器

    公开(公告)号：EP2402982A1

    公开(公告)日：2012-01-04

    申请号：EP10305716.2

    申请日：2010-07-01

    申请人： STMicroelectronics (Tours) SAS ,  Mitsubishi Materials Corporation

    发明人： Sakurai, Hideaki ,  Watanabe, Toshiaki ,  Soyama, Nobuyuki ,  Guegan, Guillaume

    IPC分类号： H01L21/02 ,  H01G4/33

    CPC分类号： H01L28/60 ,  B82Y30/00 ,  C04B35/4682 ,  C04B2235/3213 ,  C04B2235/441 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/787 ,  H01G4/01 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02282 ,  H01L28/55 ,  H01L28/65

    摘要： A thin film capacitor is characterized by forming a lower electrode (14), coating a composition onto the lower electrode (14) without applying an annealing process having a temperature of greater than 300°C, drying at a predetermined temperature within a range from ambient temperature to 500°C, and calcining at a predetermined temperature within a range of 500 to 800°C and higher than a drying temperature. The process from coating to calcining performs the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film (16) formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode (14) and the thickness of the dielectric thin film (16) formed after the initial calcining step (thickness of lower electrode/ thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0.

    摘要翻译： 一种薄膜电容器由形成下部电极（14），而不应用到退火工艺具有大于300℃的温度下涂布在下部电极（14）的组合物，在规定的温度从环境温度的范围内进行干燥特点 温度至500℃，和煅烧在低于干燥温度的范围为500至800℃和更高范围内的预定温度。 从涂布到煅烧处理从涂层进行处理，以煅烧一次或至少两次，或从涂布到干燥的过程中执行至少两次，然后煅烧执行一次。 第一煅烧后形成的电介质薄膜（16）的厚度为20至600nm。所述下电极（14）的厚度的比率和电介质薄膜的厚度（16）在初次煅烧步骤之后形成 （下部电极/厚度的电介质薄膜的厚度）优选范围为○点10至15.0。

    Method of forming PNbZT ferroelectric thin film
    9.
    发明公开
    Method of forming PNbZT ferroelectric thin film 有权
    Verfahren zur Herstellung eines PNbZT-ferroelektrischenDünnfilms

    公开(公告)号：EP2784802A1

    公开(公告)日：2014-10-01

    申请号：EP14155334.7

    申请日：2014-02-17

    申请人： Mitsubishi Materials Corporation

    发明人： Doi, Toshihiro ,  Sakurai, Hideaki ,  Soyama, Nobuyuki

    IPC分类号： H01L21/02 ,  H01L21/316

    CPC分类号： B05D3/0254 ,  B05D1/38 ,  C23C14/088 ,  C23C14/5806 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1241 ,  C23C18/1254 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/02304 ,  H01L28/56 ,  Y10T428/26

    摘要： A method includes: coating a composition for forming a PZT ferroelectric film not containing Nb on a lower electrode 11 formed on a substrate 10, prebaking the composition, and baking the composition to be crystallized and to thereby form a crystallization promoting layer 12 having a thickness of 45 to 90 nm thereon; coating a composition for forming a PNbZT-based ferroelectric film, containing 4 to 10 at% of Nb in 100 at% of all the perovskite B site atoms (Zr, Ti) contained in the composition, on the formed crystallization promoting layer 12 to form a coating film 13a of PNbZT thereon; and pre-baking the coating film 13a and then baking the coating film 13a to be crystallized and to thereby form a PNbZT ferroelectric thin film on the lower electrode 11.

    摘要翻译： 一种方法包括：在形成在基板10上的下部电极11上涂布用于形成不含Nb的PZT铁电体膜的组合物，对组合物进行预烘烤，并烘焙待结晶的组合物，从而形成具有厚度的结晶促进层12 在其上为45至90nm; 在形成的结晶促进层12上，在组成中所含的全部钙钛矿B原子（Zr，Ti）的100at％中涂布含有4〜10at％的Nb的PNbZT型铁电体膜的组合物，形成 PNbZT的涂膜13a; 并对涂膜13a进行预烘烤，然后烘烤待结晶的涂膜13a，从而在下电极11上形成PNbZT铁电薄膜。

    Dielectric thin film-forming composition and method of forming dielectric thin film using the same
    10.
    发明公开
    Dielectric thin film-forming composition and method of forming dielectric thin film using the same 审中-公开
    一种用于形成形成电介质膜，使得一个电介质薄膜和组合物的方法

    公开(公告)号：EP2760029A1

    公开(公告)日：2014-07-30

    申请号：EP14152366.2

    申请日：2014-01-24

    申请人： Mitsubishi Materials Corporation

    发明人： Fujii, Jun ,  Watanabe, Toshiaki ,  Sakurai, Hideaki ,  Soyama, Nobuyuki

    IPC分类号： H01B3/12

    CPC分类号： H01G4/1227 ,  H01B3/12 ,  H01G4/33

    摘要： In a thin film capacitor or the like, a dielectric thin film-forming composition capable of improving leakage current characteristics; and a method of forming a dielectric thin film using this composition are provided.
    regarding a dielectric thin film-forming composition for forming a dielectric thin film, the dielectric thin film is formed of a barium strontium titanate (BST)-based complex perovskite film, and the composition is doped with aluminum (Al). In addition, a doping amount of the aluminum (Al) is in a range of 0.1 at% to 15 at% with respect to 100 at% of perovskite A site atoms contained in the composition.

    摘要翻译： 在薄膜电容器等，能够提高泄漏电流特性的电介质薄膜形成用组合物; 并且提供了形成使用该组合物的电介质薄膜的方法。 关于用于形成介电薄膜的介电薄膜形成用组合物，所述电介质薄膜上形成钛酸钡锶（BST）的系复合钙钛矿的电影，并且所述组合物被掺杂有铝（Al）。 此外，铝的掺杂量（Al）的是在重量％至15的范围内的0.1原子％与钙钛矿组合物中所含A位原子的％，相对于100。