公开(公告)号：EP2978009A1

公开(公告)日：2016-01-27

申请号：EP14873693.7

申请日：2014-12-16

申请人： NGK Insulators, Ltd.

发明人： MIYAZAWA, Sugio ,  IWASAKI, Yasunori ,  TAKAGAKI, Tatsuro ,  IDE, Akiyoshi ,  NAKANISHI, Hirokazu

IPC分类号： H01L21/02 ,  H01L27/12

CPC分类号： H01L21/76254 ,  C01F7/02 ,  C01P2006/60 ,  C04B35/10 ,  C04B35/115 ,  C04B35/64 ,  C04B37/001 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/6562 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/662 ,  C04B2235/786 ,  C04B2237/343 ,  C04B2237/70 ,  C04B2237/704 ,  H01L21/02002 ,  H01L21/6835 ,  H01L23/15 ,  H01L27/12 ,  H01L29/06 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381

摘要： It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.

摘要翻译： 它被用于半导体提供一种复合衬底的把手的底物。 手柄基板由透光性多晶氧化铝组成。 半透明多晶氧化铝的氧化铝的纯度为99.9％或更高，平均透光性多晶氧化铝的总正向光透射率是在波长范围为200至400nm 60％或更高，并在平均的线性光 半透明多晶氧化铝的透射率在波长范围为200至400nm 15％或更低。

公开(公告)号：EP2960925B1

公开(公告)日：2018-04-25

申请号：EP14754763.2

申请日：2014-02-18

申请人： NGK Insulators, Ltd.

发明人： IDE, Akiyoshi ,  TAKAGAKI, Tatsuro ,  MIYAZAWA, Sugio ,  HORI, Yuji ,  TAI, Tomoyoshi ,  HATTORI, Ryosuke

IPC分类号： H01L21/02 ,  H01L21/683 ,  H03H3/08 ,  H03H9/145 ,  H03H9/25

CPC分类号： H01L21/6835 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B9/005 ,  B32B9/04 ,  B32B18/00 ,  B32B27/08 ,  B32B27/20 ,  B32B27/283 ,  B32B37/10 ,  B32B38/10 ,  B32B2264/105 ,  B32B2307/20 ,  B32B2307/206 ,  B32B2307/538 ,  B32B2309/02 ,  B32B2309/105 ,  B32B2457/00 ,  B32B2457/14 ,  H01L21/78 ,  H01L41/1873 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/25 ,  Y10T428/12597

摘要： A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.

公开(公告)号：EP2978009B1

公开(公告)日：2018-03-21

申请号：EP14873693.7

申请日：2014-12-16

申请人： NGK Insulators, Ltd.

发明人： MIYAZAWA, Sugio ,  IWASAKI, Yasunori ,  TAKAGAKI, Tatsuro ,  IDE, Akiyoshi ,  NAKANISHI, Hirokazu

IPC分类号： H01L21/02 ,  H01L27/12 ,  C01F7/02 ,  C04B35/64 ,  C04B37/00 ,  H01L23/15 ,  H01L21/762 ,  H01L29/06 ,  C04B35/115 ,  H01L21/683

CPC分类号： H01L21/76254 ,  C01F7/02 ,  C01P2006/60 ,  C04B35/10 ,  C04B35/115 ,  C04B35/64 ,  C04B37/001 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/6562 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/662 ,  C04B2235/786 ,  C04B2237/343 ,  C04B2237/70 ,  C04B2237/704 ,  H01L21/02002 ,  H01L21/6835 ,  H01L23/15 ,  H01L27/12 ,  H01L29/06 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381

摘要： It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.

公开(公告)号：EP3113586A1

公开(公告)日：2017-01-04

申请号：EP15754711.8

申请日：2015-02-20

申请人： NGK Insulators, Ltd.

发明人： TAKAGAKI, Tatsuro ,  IWASAKI, Yasunori ,  MIYAZAWA, Sugio ,  IDE, Akiyoshi ,  NAKANISHI, Hirokazu

IPC分类号： H05K1/03 ,  C04B35/111 ,  H05K3/00

CPC分类号： H05K1/115 ,  C04B35/111 ,  C04B35/119 ,  C04B35/634 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3281 ,  C04B2235/3418 ,  C04B2235/6023 ,  C04B2235/606 ,  C04B2235/612 ,  C04B2235/6582 ,  C04B2235/662 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/95 ,  H01B3/12 ,  H01B17/56 ,  H05K1/03 ,  H05K1/0306 ,  H05K3/00 ,  H05K3/0014 ,  H05K3/0029 ,  H05K2201/09009 ,  Y10T428/24273

摘要： It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 µ m, and a diameter of the through hole is 20 to 100 µ m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 µ m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 µ m.

摘要翻译： 提供一种绝缘基板，其包括布置在绝缘基板中的用于导体的通孔。 绝缘基板的厚度为25〜100μm，贯通孔的直径为20〜100μm。 绝缘基板包括主体部分和暴露于通孔的暴露区域并且由氧化铝烧结体构成。 氧化铝烧结体的相对密度为99.5％或更高。 该氧化铝烧结体具有99.9％或更高的纯度，并且在所述主体部分中具有3至6μm的平均晶粒尺寸。 氧化铝颗粒在暴露区域为板状，平板状氧化铝颗粒的平均长度为8-25μm。

公开(公告)号：EP2960925A1

公开(公告)日：2015-12-30

申请号：EP14754763.2

申请日：2014-02-18

申请人： NGK Insulators, Ltd.

发明人： IDE, Akiyoshi ,  TAKAGAKI, Tatsuro ,  MIYAZAWA, Sugio ,  HORI, Yuji ,  TAI, Tomoyoshi ,  HATTORI, Ryosuke

IPC分类号： H01L21/02 ,  H01L21/683 ,  H03H3/08 ,  H03H9/145 ,  H03H9/25

CPC分类号： H01L21/6835 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B9/005 ,  B32B9/04 ,  B32B18/00 ,  B32B27/08 ,  B32B27/20 ,  B32B27/283 ,  B32B37/10 ,  B32B38/10 ,  B32B2264/105 ,  B32B2307/20 ,  B32B2307/206 ,  B32B2307/538 ,  B32B2309/02 ,  B32B2309/105 ,  B32B2457/00 ,  B32B2457/14 ,  H01L21/78 ,  H01L41/1873 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/25 ,  Y10T428/12597

摘要： A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.

摘要翻译： 的复合衬底10包括半导体衬底12和绝缘支撑基板14也被层压在一起。 支承基板14包括第一和第二基板14a和14b与强度相同的材料制成的并结合在一起做允许第一和第二基板14a和14b从海誓山盟用刀片分离。 半导体基板12层叠在第一基板14a的相反侧的表面键合到第二基片14b的表面上。

公开(公告)号：EP3113586B1

公开(公告)日：2018-11-28

申请号：EP15754711.8

申请日：2015-02-20

申请人： NGK Insulators, Ltd.

发明人： TAKAGAKI, Tatsuro ,  IWASAKI, Yasunori ,  MIYAZAWA, Sugio ,  IDE, Akiyoshi ,  NAKANISHI, Hirokazu

IPC分类号： H05K1/03 ,  C04B35/111 ,  H05K3/00

CPC分类号： H05K1/115 ,  C04B35/111 ,  C04B35/119 ,  C04B35/634 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3281 ,  C04B2235/3418 ,  C04B2235/6023 ,  C04B2235/606 ,  C04B2235/612 ,  C04B2235/6582 ,  C04B2235/662 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/95 ,  H01B3/12 ,  H01B17/56 ,  H05K1/03 ,  H05K1/0306 ,  H05K3/00 ,  H05K3/0014 ,  H05K3/0029 ,  H05K2201/09009 ,  Y10T428/24273

摘要： It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 µ m, and a diameter of the through hole is 20 to 100 µ m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 µ m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 µ m.

公开(公告)号：EP2953157B1

公开(公告)日：2017-04-05

申请号：EP14877410.2

申请日：2014-10-15

申请人： NGK Insulators, Ltd.

发明人： TAKAGAKI, Tatsuro ,  IWASAKI, Yasunori ,  MIYAZAWA, Sugio ,  IDE, Akiyoshi ,  NAKANISHI, Hirokazu

IPC分类号： H01L21/02 ,  C04B35/115 ,  C04B35/111 ,  H01L27/12

CPC分类号： H01L21/683 ,  C04B35/111 ,  C04B35/115 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6023 ,  C04B2235/6025 ,  C04B2235/612 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/662 ,  C04B2235/945 ,  C04B2235/963 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/2007 ,  H01L27/12 ,  H01L29/16 ,  Y10T428/21 ,  Y10T428/219 ,  Y10T428/24777

公开(公告)号：EP2953157A1

公开(公告)日：2015-12-09

申请号：EP14877410.2

申请日：2014-10-15

申请人： NGK Insulators, Ltd.

发明人： TAKAGAKI, Tatsuro ,  IWASAKI, Yasunori ,  MIYAZAWA, Sugio ,  IDE, Akiyoshi ,  NAKANISHI, Hirokazu

IPC分类号： H01L21/02 ,  C04B35/115

CPC分类号： H01L21/683 ,  C04B35/111 ,  C04B35/115 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6023 ,  C04B2235/6025 ,  C04B2235/612 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/662 ,  C04B2235/945 ,  C04B2235/963 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/2007 ,  H01L27/12 ,  H01L29/16 ,  Y10T428/21 ,  Y10T428/219 ,  Y10T428/24777

摘要： In a handle substrate for a composite wafer for a semiconductor, particles from the wafer with a notch formed therein are reduced. The handle substrate 1A or 1B for the composite wafer for the semiconductor is formed of a polycrystalline ceramic sintered body, and includes a notch 2A or 2B in its outer peripheral portion. The notch is formed with an as-sintered surface.