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1.发明授权CHEMICALLY AMPLIFIED POSITIVE RESIST DRY FILM, DRY FILM LAMINATE AND METHOD OF PREPARING LAMINATE 有权化学增强正涂料干膜，干膜层压结构及其制造方法层压
公开(公告)号：EP2993521B1
公开(公告)日：2017-03-22
申请号：EP15182701.1
申请日：2015-08-27
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0048 , G03F7/0392 , G03F7/11 , G03F7/168
摘要： A chemically amplified positive resist dry film to be formed on a support film contains 5-40 wt% of a component having a boiling point of 55-250°C under atmospheric pressure. The resist dry film having flexibility and dimensional stability can be prepared through simple steps. The resist dry film can be efficiently and briefly laid on an article and processed to form a pattern.
摘要翻译： 一种化学放大型正型抗蚀剂干膜，要在载体上形成的膜，含有具有55-250℃，在大气压下的沸点的组分的5-40重量％。 抗蚀剂干具有薄膜柔韧性和尺寸稳定性可通过简单的步骤来制备。 抗蚀剂干膜，可以有效地和简单地在制品放置在并处理以形成图案。
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2.发明公开SEMICONDUCTOR DEVICE, LAYERED SEMICONDUCTOR DEVICE, SEALED-THEN-LAYERED SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREFOR 审中-公开半导体部件，分层的半导体部件，密封，然后分层半导体元件及其制造方法
公开(公告)号：EP3128548A1
公开(公告)日：2017-02-08
申请号：EP15772875.9
申请日：2015-03-16
发明人： TAKEMURA, Katsuya , SOGA, Kyoko , ASAI, Satoshi , KONDO, Kazunori , SUGO, Michihiro , KATO, Hideto
IPC分类号： H01L23/12 , C25D5/02 , C25D7/00 , H01L21/312 , H01L23/52 , H01L25/10 , H01L25/11 , H01L25/18 , H05K1/11 , H05K3/00 , H05K3/28 , H05K3/40
CPC分类号： H01L23/562 , C08G59/3281 , C09D163/00 , C09D183/04 , C09D183/10 , C23C14/042 , C23C14/34 , C25D5/022 , C25D5/505 , C25D7/00 , C25D7/123 , G03F7/0035 , G03F7/0757 , H01L21/4853 , H01L21/486 , H01L21/565 , H01L21/568 , H01L23/3114 , H01L23/49816 , H01L23/49827 , H01L23/5384 , H01L23/5386 , H01L23/5389 , H01L24/13 , H01L24/16 , H01L24/24 , H01L24/32 , H01L24/73 , H01L24/82 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/03 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/13025 , H01L2224/13111 , H01L2224/16145 , H01L2224/16225 , H01L2224/19 , H01L2224/24226 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/73267 , H01L2224/82005 , H01L2224/8203 , H01L2224/92125 , H01L2224/92244 , H01L2224/97 , H01L2225/06513 , H01L2225/06548 , H01L2225/06555 , H01L2225/06582 , H01L2225/1035 , H01L2225/1058 , H01L2924/3511 , H05K1/185 , H05K2201/10515 , H01L2224/83 , H01L2224/82 , H01L2924/01047 , H01L2924/00 , H01L2224/83005
摘要： The present invention is a semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects.
摘要翻译： 本发明是一种半导体装置，导通半导体器件的金属焊盘和金属互连的每个电连接到所述半导体器件中，通过电极和焊料凸块的每个电连接到所述金属互连，第一绝缘的半导体装置 在其上的半导体器件被置于层，形成在半导体器件上形成第二绝缘层，形成在第二绝缘层上的第三绝缘层，worin金属互连电连接到所述半导体器件经由所述上半导体器件的金属垫 在在所述第二绝缘层的上表面上，和金属互连从其上表面贯通第二绝缘层和电连接到在所述第二绝缘层的下表面的贯通电极。 该半导体装置可以被容易地放置在电路板上并堆叠，并能减少其翘曲即使致密的金属互连件。
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3.发明公开
公开(公告)号：EP3671345A1
公开(公告)日：2020-06-24
申请号：EP19215181.9
申请日：2019-12-11
IPC分类号： G03F7/038 , G03F7/075 , C08G77/52 , C09D183/16
摘要： A photosensitive resin composition comprising a polymer containing a silphenylene skeleton and a fluorene skeleton and having a crosslinkable site in the molecule, a phenol compound having a Mw of 300-10,000, a photoacid generator, and a benzotriazole or imidazole compound has improved film properties. Even from a thick film, a fine size pattern can be formed.
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公开(公告)号：EP3392708A1
公开(公告)日：2018-10-24
申请号：EP18166432.7
申请日：2018-04-10
摘要： A laminate comprising a thermoplastic film and a positive resist film is provided, the positive resist film comprising (A) a novolak resin-naphthoquinone diazide (NQD) base resin composition, (B) a polyester, and (C) 3-30 wt% of an organic solvent. The resist film may be transferred to a stepped support without forming voids.
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公开(公告)号：EP3327504A1
公开(公告)日：2018-05-30
申请号：EP17202732.8
申请日：2017-11-21
CPC分类号： G03F7/0392 , G03F7/0397 , G03F7/094 , G03F7/11 , G03F7/161 , G03F7/20 , G03F7/30 , G03F7/40
摘要： A laminate comprising a thermoplastic film and a chemically amplified positive resist film thereon is provided, the resist film comprising (A) a base polymer having a hydroxyphenyl group and a protective group, the polymer turning alkali soluble as a result of the protective group being eliminated under the action of acid, (B) a photoacid generator, (C) an organic solvent, and (D) a polymer having an ester bond in its backbone. The resist film may be transferred to a stepped support without forming voids.
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6.发明公开CHEMICALLY AMPLIFIED POSITIVE RESIST DRY FILM, DRY FILM LAMINATE AND METHOD OF PREPARING LAMINATE 有权化学增强正涂料干膜，干膜层压结构及其制造方法层压
公开(公告)号：EP2993521A1
公开(公告)日：2016-03-09
申请号：EP15182701.1
申请日：2015-08-27
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0048 , G03F7/0392 , G03F7/11 , G03F7/168
摘要： A chemically amplified positive resist dry film to be formed on a support film contains 5-40 wt% of a component having a boiling point of 55-250°C under atmospheric pressure. The resist dry film having flexibility and dimensional stability can be prepared through simple steps. The resist dry film can be efficiently and briefly laid on an article and processed to form a pattern.
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7.发明公开
公开(公告)号：EP4050054A1
公开(公告)日：2022-08-31
申请号：EP20879287.9
申请日：2020-09-24
发明人： HIRANO, Yoshinori , ASAI, Satoshi , GOI, Takahiro
摘要： Provided is a photosensitive resin composition which comprises (A) a polymer comprising repeating units represented by formula (A1) and at least one kind of repeating units selected from among repeating units represented by formula (A2) and repeating units represented by formula (A3), (B) an epoxy compound containing four or more epoxy groups on average in the molecule, (C) a photoacid generator, (D) a benzotriazole compound and/or an imidazole compound, and (E) an organic solvent.
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公开(公告)号：EP3327504B1
公开(公告)日：2019-05-15
申请号：EP17202732.8
申请日：2017-11-21
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9.发明授权CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM 有权化学EXTENDED负抗蚀剂组合物，光固化干膜，方法，图案形成方法及保护膜电气/电子零件
公开(公告)号：EP3002633B1
公开(公告)日：2017-03-22
申请号：EP15186378.4
申请日：2015-09-23
发明人： ASAI, Satoshi , TAKEMURA, Katsuya , SOGA, Kyoko
CPC分类号： G03F7/0757 , G03F7/0382 , G03F7/168 , G03F7/2002 , G03F7/2037 , G03F7/32 , G03F7/38 , G03F7/40
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10.发明公开CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS 有权化学杀虫剂阳性抗菌药物MUSTERBILDUNGSVERFAHREN
公开(公告)号：EP3128368A1
公开(公告)日：2017-02-08
申请号：EP16181363.9
申请日：2016-07-27
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0392 , G03F7/0397 , G03F7/085
摘要： A chemically amplified positive resist composition is provided comprising (A) a polymer adapted to turn soluble in alkaline aqueous solution under the action of acid, (B) a photoacid generator, (C) a carboxylic acid, and (D) a benzotriazole compound and/or an imidazole compound. When the resist composition is coated on a copper substrate as a thick film of 5-250 µm thick and lithographically processed into a pattern, a high resolution is available and the pattern is of rectangular profile.
摘要翻译： 提供一种化学放大型正性抗蚀剂组合物，其包含（A）适于在酸的作用下在碱性水溶液中溶解的聚合物，（B）光酸产生剂，（C）羧酸和（D）苯并三唑化合物和 /或咪唑化合物。 当将抗蚀剂组合物作为5-250μm厚的厚膜涂覆在铜基板上并且被光刻处理成图案时，可以获得高分辨率并且图案是矩形轮廓。
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