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公开(公告)号:EP2508656A4
公开(公告)日:2013-08-07
申请号:EP10833378
申请日:2010-11-29
Applicant: UNIV TOHOKU , TOKUYAMA CORP
Inventor: FUKUYAMA HIROYUKI , AZUMA MASANOBU , TAKADA KAZUYA , HATTORI TAKESHI
CPC classification number: C30B29/403 , C30B23/00 , C30B23/007 , C30B25/00 , C30B29/62
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公开(公告)号:EP1961716A4
公开(公告)日:2010-08-04
申请号:EP06834776
申请日:2006-12-15
Applicant: TOKUYAMA CORP
Inventor: KANECHIKA YUKIHIRO , AZUMA MASANOBU
CPC classification number: H01J61/366 , C04B35/581 , C04B35/628 , C04B37/025 , C04B37/026 , C04B2235/3208 , C04B2235/3222 , C04B2235/3865 , C04B2235/3895 , C04B2235/404 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/6021 , C04B2235/652 , C04B2235/6587 , C04B2235/72 , C04B2235/94 , C04B2235/9623 , C04B2235/9653 , C04B2235/9661 , C04B2237/08 , C04B2237/122 , C04B2237/366 , C04B2237/403 , H01J61/302 , H01J61/82
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公开(公告)号:EP2006262A4
公开(公告)日:2010-04-21
申请号:EP07738439
申请日:2007-03-13
Applicant: TOKUYAMA CORP
Inventor: KANECHIKA YUKIHIRO , AZUMA MASANOBU
IPC: C04B35/581 , H01J61/30
CPC classification number: H01J61/302 , C04B35/581 , C04B2235/3208 , C04B2235/3213 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/422 , C04B2235/425 , C04B2235/604 , C04B2235/656 , C04B2235/6567 , C04B2235/658 , C04B2235/662 , C04B2235/72 , C04B2235/721 , C04B2235/723 , C04B2235/725 , C04B2235/85 , C04B2235/87 , C04B2235/94 , C04B2235/9653 , Y10T428/13
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4.SILICON MELT CONTACTING MEMBER AND PROCESS FOR PRODUCTION THEREOF, AND PROCESS FOR PRODUCTION OF CRYSTALLINE SILICON 有权
Title translation: 硅熔液接触单元及其制造方法生产结晶硅的相同,方法公开(公告)号:EP2669411A4
公开(公告)日:2014-10-01
申请号:EP12739533
申请日:2012-01-26
Applicant: UNIV YAMAGUCHI , TOKUYAMA CORP
Inventor: KOMATSU RYUICHI , ITOH HIRONORI , AZUMA MASANOBU
CPC classification number: C30B11/002 , C01B33/02 , C04B38/0615 , C04B2111/00612 , C30B9/04 , C30B11/00 , C30B11/02 , C30B29/06 , C30B29/64 , H01L31/0352 , H01L31/035281 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T117/1092 , C04B35/584 , C04B38/0054 , C04B38/0074
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5.PROCESS FOR PRODUCING UNION COMPOSED OF MEMBER OF SINTERED ALUMINUM NITRIDE AND HIGH-MELTING-POINT METAL MEMBER 审中-公开
Title translation: PROCESS FOR A股从氮化铝烧结体和元件的难熔金属的元素的制备公开(公告)号:EP2088135A4
公开(公告)日:2011-06-29
申请号:EP07830295
申请日:2007-10-22
Applicant: TOKUYAMA CORP
Inventor: KANECHIKA YUKIHIRO , AZUMA MASANOBU
CPC classification number: C04B37/025 , C04B35/581 , C04B35/6263 , C04B35/632 , C04B35/638 , C04B35/64 , C04B37/026 , C04B2235/3208 , C04B2235/3222 , C04B2235/3895 , C04B2235/404 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/6567 , C04B2235/72 , C04B2235/785 , C04B2235/786 , C04B2235/94 , C04B2235/96 , C04B2235/9653 , C04B2237/08 , C04B2237/366 , C04B2237/58 , Y10T428/13 , Y10T428/1359
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6.METHOD FOR JOINING ALUMINUM NITRIDE SINTERED BODY AND ALUMINUM NITRIDE JOINED BODY 审中-公开
Title translation: METHOD FOR氮化铝化合物和相关的氮化铝公开(公告)号:EP2006268A4
公开(公告)日:2009-11-04
申请号:EP07740222
申请日:2007-03-29
Applicant: TOKUYAMA CORP , NAT INST OF ADVANCED IND SCIEN
Inventor: KANECHIKA YUKIHIRO , AZUMA MASANOBU , YASUOKA MASAKI , WATARI KOJI
IPC: C04B37/00
CPC classification number: C04B35/581 , C04B37/005 , C04B2235/3208 , C04B2235/3213 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/422 , C04B2235/5436 , C04B2235/5445 , C04B2235/658 , C04B2235/667 , C04B2237/08 , C04B2237/366 , C04B2237/76
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7.ALUMINUM NITRIDE JOINED ARTICLE AND METHOD FOR MANUFACTURE THEREOF 审中-公开
Title translation: 铝合金复合体及其制造方法公开(公告)号:EP1690845A4
公开(公告)日:2009-04-01
申请号:EP04793332
申请日:2004-10-28
Applicant: TOKUYAMA CORP
Inventor: ESAKI TATSUO , SATO HIDEKI , AZUMA MASANOBU
IPC: C04B37/00 , H01L21/683 , B32B18/00 , C04B35/581 , C04B35/626 , C04B35/64 , C04B35/645 , H01L21/68
CPC classification number: C04B37/005 , B32B18/00 , B32B2315/02 , C04B35/581 , C04B35/62655 , C04B35/64 , C04B35/645 , C04B37/003 , C04B2235/5436 , C04B2235/5463 , C04B2235/661 , C04B2235/96 , C04B2235/963 , C04B2237/08 , C04B2237/083 , C04B2237/122 , C04B2237/366 , C04B2237/64 , C04B2237/66 , C04B2237/708 , Y10T428/12736
Abstract: [PROBLEMS] To provide an aluminum nitride joined article useful as an electrostatic chuck for holding a semiconductor wafer in a semiconductor manufacturing process, which comprises aluminum nitride sintered products joined via a sintered metal layer and allows the adsorption treatment for the semiconductor wafer to be carried out with uniformity when used for the above. [MEANS FOR SOLVING PROBLEMS] An aluminum nitride sintered product joined article which comprises two sheets of aluminum nitride sintered product and, formed on at least a part of the surface for joining, a sintered metal layer comprising tungsten or molybdenum and having a thickness of 15 to 100 μm, wherein the above sintered metal layer has a sheet resistance value of 1 Ω/□ or less and exhibits a warp of 100 μm/100 mm or less, and the shear strength between the sintered metal layer and the aluminum nitride sintered product in the above surface for joining is 4 kg/mm2 or greater.
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公开(公告)号:EP1391926A4
公开(公告)日:2006-10-18
申请号:EP02776534
申请日:2002-05-15
Applicant: TOKUYAMA CORP
Inventor: AZUMA MASANOBU
CPC classification number: H01L23/3731 , H01L21/4882 , H01L23/3732 , H01L23/3735 , H01L2924/0002 , Y10T29/4935 , H01L2924/00
Abstract: A heat sink comprising a ceramic insulating base and a diamond film formed on the base so as to mount a device on it, having an excellent heat dissipation properties, and used stably. The base is made of a ceramic mainly containing aluminum nitride having a high heat conductivity. An adhesion member layer such as a silicon film securable to the base and the diamond film is formed on the base, and a polycrystalline diamond film of high quality securely adhered to the base, with the adhesion member layer interposed therebetween is formed by CVD on the adhesion member lager, thus fabricating a heat sink.
Abstract translation: 本文公开了一种散热器,其包括绝缘陶瓷的基板,并且在其上表面上叠加用于在其上设置元件的金刚石膜,该散热器具有优异的散热特性并且可以稳定地使用。 该散热器是通过提供含有高导热性的氮化铝的陶瓷基板作为主要成分而获得的; 在基板上形成能够与基板粘合的硅膜和金刚石膜的接合构件层; 以及在接合构件层上形成高质量的多晶金刚石膜,使得多晶金刚石膜通过例如气相法通过接合构件层与基板牢固地接合。
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9.POLYGONAL COLUMNAR MATERIAL OF ALUMINUM NITRIDE SINGLE CRYSTAL, AND PROCESS FOR PRODUCING PLATE-LIKE ALUMINUM NITRIDE SINGLE CRYSTAL USING THE POLYGONAL COLUMNAR MATERIAL 审中-公开
Title translation: 多棱柱状材料ALUMINIUMNITRIDEINKRISTALL及其制造方法板ALUMINIUMNITRIDEINRKISTALL使用多棱柱材料公开(公告)号:EP2224041A4
公开(公告)日:2014-06-11
申请号:EP08852793
申请日:2008-11-18
Applicant: UNIV MEIJO , TOKUYAMA CORP
Inventor: AMANO HIROSHI , KANECHIKA YUKIHIRO , AZUMA MASANOBU
IPC: C30B29/38 , C01B21/072 , C30B23/06 , C30B29/40 , C30B29/62
CPC classification number: C30B29/403 , C30B23/00 , Y10T428/2973
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10.ALUMINUM NITRIDE SINTER AND PROCESS FOR PRODUCING THE SAME 审中-公开
Title translation: ALUMINIUMNITRIDSINTER及其制造方法公开(公告)号:EP2110366A4
公开(公告)日:2012-05-30
申请号:EP08710758
申请日:2008-02-04
Applicant: TOKUYAMA CORP
Inventor: KANECHIKA YUKIHIRO , AZUMA MASANOBU
IPC: C04B35/581
CPC classification number: C04B35/581 , C04B35/6261 , C04B35/6264 , C04B2235/3208 , C04B2235/3222 , C04B2235/3225 , C04B2235/5409 , C04B2235/652 , C04B2235/656 , C04B2235/6567 , C04B2235/6587 , C04B2235/72 , C04B2235/721 , C04B2235/723 , C30B23/00 , C30B29/403
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