公开(公告)号：EP2871522A4

公开(公告)日：2016-03-16

申请号：EP13817085

申请日：2013-06-06

Applicant: TORAY INDUSTRIES

Inventor： FUJIWARA TAKENORI ,  TANIGAKI YUGO ,  MASUDA ICHIRO ,  FUKUZAKI YUSUKE

IPC: G03F7/038 ,  C08F290/12 ,  G03F7/00 ,  G03F7/004 ,  G03F7/027 ,  G03F7/075 ,  H01L21/027

CPC classification number: G03F7/0388 ,  C08F290/126 ,  G03F7/0007 ,  G03F7/027 ,  G03F7/038 ,  G03F7/0755 ,  G06F2203/04103 ,  C08F222/1006

公开(公告)号：EP3203320A4

公开(公告)日：2018-06-20

申请号：EP15847359

申请日：2015-09-18

Applicant: TORAY INDUSTRIES

Inventor： TANIGAKI YUGO ,  FUJIWARA TAKENORI

IPC: G03F7/075 ,  C08K3/36 ,  C08K5/28 ,  C08L83/06 ,  G03F7/004 ,  G03F7/023 ,  G03F7/032 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3065

CPC classification number: G03F7/095 ,  C08K3/36 ,  C08K5/28 ,  C08L83/06 ,  G03F7/0042 ,  G03F7/0047 ,  G03F7/0233 ,  G03F7/032 ,  G03F7/039 ,  G03F7/0758 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3065

Abstract: To provide a photosensitive resin composition which is capable of forming a pattern with high resolution and obtaining a cured film having excellent heat resistance and cracking resistance, and is also alkali developable; and a method capable of shortening the step required to remove a cured film of the composition after formation of an impurity region on a semiconductor substrate; and a method for manufacturing a semiconductor device using the same. Disclosed is a photosensitive resin composition including a polysiloxane (A), wherein the polysiloxane (A) is a polysiloxane represented by the general formula (1), and wherein (X) and (Y) are represented by the general formulas (4) to (6). 7.5 ‰¤ X ‰¤ 75 2.5 ‰¤ Y ‰¤ 40 1.5 × Y ‰¤ X ‰¤ 3 × Y

公开(公告)号：EP3125274A4

公开(公告)日：2017-09-13

申请号：EP15769513

申请日：2015-03-18

Applicant: TORAY INDUSTRIES

Inventor： TANIGAKI YUGO ,  FUJIWARA TAKENORI

IPC: G03F7/42 ,  G03F7/023 ,  G03F7/075 ,  G03F7/40 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306

CPC classification number: H01L21/0272 ,  B08B3/08 ,  B08B7/0057 ,  G03F7/0233 ,  G03F7/0757 ,  G03F7/40 ,  G03F7/42 ,  G03F7/423 ,  G03F7/425 ,  G03F7/427 ,  H01L21/0206 ,  H01L21/266 ,  H01L21/3081 ,  H01L21/31058 ,  H01L21/31111 ,  H01L21/31116

Abstract: Disclosed is a method for manufacturing a semiconductor device, including a step of yielding a pattern 2a of a polysiloxane-containing composition over a substrate 1, and a step of forming an ion impurity region 6 in the substrate, wherein, after the step of forming an ion impurity region, the method further includes a step of firing the pattern at a temperature of 300 to 1,500°C. This method makes it possible that after the formation of the ion impurity region in the semiconductor substrate, the pattern 2a of the polysiloxane-containing composition is easily removed without leaving any residual. Thus, the yield in the production of a semiconductor device can be improved and the tact time can be shortened.

Abstract translation: 公开了一种用于制造半导体器件的方法，该方法包括在衬底1上产生含聚硅氧烷的组合物的图案2a的步骤，以及在衬底中形成离子杂质区6的步骤，其中，在形成步骤 离子杂质区域的情况下，还包括在300〜1500℃的温度下烧成图案的工序。 该方法使得在半导体衬底中形成离子杂质区之后，含聚硅氧烷的组合物的图案2a容易除去而不留下任何残留物。 由此，可以提高半导体装置的制造成品率，缩短生产节拍时间。

公开(公告)号：EP3187559A4

公开(公告)日：2018-07-18

申请号：EP15830699

申请日：2015-08-05

Applicant: TORAY INDUSTRIES

Inventor： ARIMOTO SHINJI ,  FUJIWARA TAKENORI ,  TOMIKAWA MASAO

IPC: C09J179/08 ,  C08G73/10 ,  C08K5/544 ,  C08L79/08 ,  C08L83/04 ,  C09J7/00 ,  C09J11/06 ,  C09J183/04 ,  C11D7/50 ,  H01L21/02 ,  H01L21/304

CPC classification number: H01L21/6835 ,  B32B7/12 ,  B32B43/006 ,  B32B2457/14 ,  C08G73/10 ,  C08K5/544 ,  C08L79/08 ,  C08L83/04 ,  C09J5/00 ,  C09J7/00 ,  C09J11/06 ,  C09J179/08 ,  C09J183/04 ,  C09J183/14 ,  C09J2203/10 ,  C09J2205/302 ,  C09J2400/10 ,  C09J2483/00 ,  C11D7/50 ,  C11D7/5013 ,  C11D7/5022 ,  H01L21/02 ,  H01L21/0206 ,  H01L21/304 ,  H01L21/76898 ,  H01L2221/68327 ,  H01L2221/68381 ,  Y02P20/582

Abstract: The present invention provides: a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention is a temporary-bonding adhesive characterized by being a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.99 mol% of the (A1) residue and 0.01-60 mol% of the (B1) residue.

公开(公告)号：EP2799928A4

公开(公告)日：2015-11-04

申请号：EP12861162

申请日：2012-12-21

Applicant: TORAY INDUSTRIES

Inventor： FUJIWARA TAKENORI ,  TANIGAKI YUGO ,  SUWA MITSUHITO

IPC: G03F7/075 ,  G03F7/004 ,  G03F7/023 ,  G03F7/038 ,  G03F7/09

CPC classification number: H01L21/426 ,  G03F7/0045 ,  G03F7/0047 ,  G03F7/022 ,  G03F7/0233 ,  G03F7/027 ,  G03F7/032 ,  G03F7/038 ,  G03F7/0388 ,  G03F7/0757

Abstract: Disclosed is a photosensitive resin composition which exhibits positive or negative photosensitivity and is used as a mask in an ion implantation step, the photosensitive resin composition including, as a resin, (A) a polysiloxane. The photosensitive resin composition of the present invention has high heat resistance and is capable of controlling a pattern shape, and also has excellent ion implantation mask performance, thus enabling application to a low-cost high-temperature ion implantation process.

公开(公告)号：EP2259289A4

公开(公告)日：2013-09-04

申请号：EP09722827

申请日：2009-02-27

Applicant: TORAY INDUSTRIES

Inventor： MURASE SEIICHIRO ,  FUJIWARA TAKENORI ,  JO YUKARI ,  TSUKAMOTO JUN

IPC: H01L21/312 ,  C08G59/20 ,  C08G59/30 ,  C08G59/32 ,  C08G59/68 ,  C08G65/20 ,  C08G77/14 ,  C09D5/25 ,  C09D163/00 ,  C09D183/04 ,  G03F7/075 ,  H01B3/00 ,  H01L21/02 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05

CPC classification number: H01L51/052 ,  C08G59/306 ,  C08G59/3281 ,  C08G65/20 ,  C08G77/14 ,  C09D163/00 ,  G03F7/0757 ,  H01B3/40 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0545