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    IMAGING CELL ARRAY INTEGRATED CIRCUIT
    4.
    发明公开
    IMAGING CELL ARRAY INTEGRATED CIRCUIT 审中-公开
    在EIN BILDGEBUNGSZELLARRAY INTEGRIERTER SCHALTKREIS

    公开(公告)号：EP3044811A4

    公开(公告)日：2017-04-19

    申请号：EP14843596

    申请日：2014-09-04

    申请人： OPEL SOLAR INC ,  UNIV CONNECTICUT

    发明人： TAYLOR GEOFF W

    IPC分类号： H01L27/148 ,  H01L27/146

    CPC分类号： H01L31/035218 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14652 ,  H01L27/14689 ,  H01L27/14812 ,  H01L27/14831 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/035236 ,  H01L31/1113

    摘要： A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film having a periodic array of holes.

    摘要翻译： 提供一种半导体器件，其包括由形成在衬底上的多个层实现的成像单元的阵列，其中所述多个层包括与至少一个量子点结构间隔开的至少一个调制掺杂量子阱结构。 每个相应的成像单元包括与对应的电荷存储区域间隔开的成像区域。 成像区域的至少一个量子点结构产生由入射电磁辐射的吸收产生的光电流。 所述至少一个调制掺杂量子阱结构限定了用于横向转移光电流以用于电荷存储区域中的电荷累积并由其输出的掩埋沟道。 每个成像单元的至少一个调制掺杂量子阱结构和至少一个量子点结构可以设置在接收入射电磁辐射的谐振腔内或具有周期性阵列孔的结构化金属膜的下方。