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1.发明授权Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step 有权一种用于制备微机械和microoptomechanical结构暴露单晶硅过程
公开(公告)号：EP1213259B1
公开(公告)日：2007-05-23
申请号：EP01128161.5
申请日：2001-11-27
发明人： Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T.
IPC分类号： B81B3/00
CPC分类号： B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
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公开(公告)号：EP1243550A3
公开(公告)日：2004-06-16
申请号：EP02006203.0
申请日：2002-03-19
申请人： Xerox Corporation
发明人： Gulvin, Peter M. , Chen, Jingkuang
CPC分类号： B41J2/1639 , B41J2/16 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2002/14403 , B81B7/0006
摘要： A microstructure that may be used as an electrical connection in a microfabricated electro-mechanical system (MEMS) apparatus. The microstructure may have one or more isolatable electrical connections for signal transmission. The microstructure allows a MEMS apparatus to shield signal transmissions from the effects of electromagnetic interference or conductive fluids.
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公开(公告)号：EP1255149A3
公开(公告)日：2003-09-24
申请号：EP02252944.0
申请日：2002-04-25
申请人： Xerox Corporation
发明人： Chen, Jingkuang , Sun, Decai , Kubby, Joel A.
CPC分类号： G02B6/35 , G02B6/3512 , G02B6/3582 , G02B6/3584 , G02B6/3598 , G02B6/4214
摘要： A MEMS-based adjustable mirror module allows faster, lower cost, and easier alignment of optical fibers (10) in substrates. Movable mirrors (131,133) formed on the substrate allow adjustment of the light path after the optical fiber is attached, after which the mirrors are affixed in place to prevent misalignment.
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4.发明公开Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step 有权一种用于制备微机械和microoptomechanical结构暴露单晶硅过程
公开(公告)号：EP1213259A2
公开(公告)日：2002-06-12
申请号：EP01128161.5
申请日：2001-11-27
发明人： Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T.
IPC分类号： B81B3/00
CPC分类号： B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.
摘要翻译： 本发明提供了一种微机械或微光学机械结构。 该结构是由一种方法，包括限定通过从层基底绝缘层上分离的单晶硅层上的结构所产生; 沉积和在单晶硅层上蚀刻多晶硅层，与其余polysilcon形成该结构的机械或光学元件; 露出单晶硅层的选定区域; 和释放所形成的结构。
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5.发明授权
公开(公告)号：EP1310808B1
公开(公告)日：2007-08-22
申请号：EP02025107.0
申请日：2002-11-08
申请人： Xerox Corporation
发明人： Kubby, Joel A. , Lin, Pinyen , Chen, Jingkuang , Su, Yi
IPC分类号： G02B6/293
CPC分类号： G02B6/356 , G02B6/12021 , G02B6/12033 , G02B6/2938 , G02B6/3508 , G02B6/3512 , G02B6/3584 , G02B6/3596 , G02B2006/12061 , G02B2006/12097 , G02B2006/12107 , G02B2006/12145 , G02B2006/12164
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公开(公告)号：EP1243550B1
公开(公告)日：2006-06-14
申请号：EP02006203.0
申请日：2002-03-19
申请人： Xerox Corporation
发明人： Gulvin, Peter M. , Chen, Jingkuang
CPC分类号： B41J2/1639 , B41J2/16 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2002/14403 , B81B7/0006
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7.发明公开Process for manufacturing micromechanical and microoptomechanical structures with pre-applied patterning 有权一种用于制备具有附接的样品的微机械和microoptomechanical结构过程
公开(公告)号：EP1213260A3
公开(公告)日：2004-06-16
申请号：EP01128169.8
申请日：2001-11-27
发明人： Scharf, Bruce R. , Gulvin, Peter M. , Chen, Jingkuang , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T.
IPC分类号： B81B3/00
CPC分类号： B81C1/00666 , B81B2201/047 , B81B2203/0118
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a pattern on a single crystal silicon layer separated by an insulator layer from a substrate layer; defining a structure in the single-crystal silicon layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; and releasing the formed structure.
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8.发明公开Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step 有权一种用于制备微机械和microoptomechanical结构，包括硅单晶的曝光的步骤的过程
公开(公告)号：EP1213259A3
公开(公告)日：2004-06-16
申请号：EP01128161.5
申请日：2001-11-27
发明人： Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T.
IPC分类号： B81B3/00
CPC分类号： B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.
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公开(公告)号：EP0888888B1
公开(公告)日：2006-11-29
申请号：EP98304334.0
申请日：1998-06-02
申请人： Xerox Corporation
发明人： Genovese, Frank C. , Kubby, Joel A. , Peeters, Eric , Chen, Jingkuang , Hays, Dan A. , Pond, Stephen F.
IPC分类号： B41J2/045
CPC分类号： B41J2/1629 , B41J2/14 , B41J2/16 , B41J2/1631 , B41J2/1635 , B41J2/1639 , B41J2/1645 , B41J2/1646 , B41J2002/041 , B41J2002/14387 , B41J2202/13
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公开(公告)号：EP1339101A3
公开(公告)日：2005-11-30
申请号：EP03003955.6
申请日：2003-02-21
申请人： Xerox Corporation
发明人： Chen, Jingkuang , Su, Yi
IPC分类号： H01L21/8238 , H01L27/092
CPC分类号： B81C1/00246 , B81B2201/047 , B81C2203/0735 , H01L21/823493 , H01L21/823892 , H01L21/84 , H01L27/0617 , H01L27/1203
摘要： A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heterogeneous device may further comprise at least one microelectromechanical system-based element and/or at least one photodiode. In embodiments, the heterogeneous circuit devices comprise at least one CMOS transistor and at least one DMOS transistor. In embodiments, the substrate comprises a layer of silicon or a layer of p-type silicon. In other embodiments, the substrate comprises a silicon-on-insulator wafer comprising a single-crystal-silicon layer or a single-crystal-P-silicon layer, a substrate and an insulator layer therebetween.
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