Spectrophotometer for color printer with displacement insensitive optics
    3.
    发明公开
    Spectrophotometer for color printer with displacement insensitive optics 审中-公开
    位移不敏感分光光度计进行颜色印刷单元

    公开(公告)号:EP1103799A3

    公开(公告)日:2003-10-01

    申请号:EP00125513.2

    申请日:2000-11-21

    申请人: Xerox Corporation

    摘要: An improved spectrophotometer for non-contact measuring of the colors of colored target areas, especially, test patches on moving printed test sheets in an unrestrained normal output path of a color printer, which test patches may be sequentially angularly illuminated with multiple different colors, with a photosensor providing electrical signals in response, the spectrophotometer having a lens system for transmitting that reflected illumination from the test patch to the photosensor with a lens magnification ratio of approximately one to one. The exemplary spectrophotometer provides non-contact color measurements of moving color target areas variably displaced therefrom within normal paper path baffle spacings, with a displacement insensitivity of at least 6 millimeters about a nominal target to spectrophotometer separation.

    Electrostatically actuated devices
    6.
    发明公开
    Electrostatically actuated devices 有权
    Elektrostatischgesteuerte Vorrichtungen

    公开(公告)号:EP1199174A1

    公开(公告)日:2002-04-24

    申请号:EP01308476.9

    申请日:2001-10-03

    申请人: Xerox Corporation

    IPC分类号: B41J2/14

    摘要: An electrostatic injet head (10) having an inner structure (56) on the bottom of the top (53) of the membrane (50) for isolating it for the conductor (40), and an outer structure (58), away from the center of the membrane (50), on the bottom of the top (53) of the membrane (50) to stop excessive flexing of the membrane (50) leading to inter-electrode contact. The invention can be used in various silicon-based actuators, including fluid pumps and optical switching devices.

    摘要翻译: 在所述膜(50)的顶部(53)的底部具有用于将所述导体(40)隔离的内部结构(56)的静电喷射头(10)和远离所述导体(40)的外部结构(58) 在膜(50)的顶部(53)的底部上的膜(50)的中心,以阻止膜(50)的过度弯曲,导致电极间接触。 本发明可用于各种基于硅的致动器,包括流体泵和光学开关装置。

    Systems and methods for thermal isolation of a silicon structure
    9.
    发明公开
    Systems and methods for thermal isolation of a silicon structure 有权
    的装置和方法的硅结构的热绝缘

    公开(公告)号:EP1333008A3

    公开(公告)日:2004-12-08

    申请号:EP03250016.7

    申请日:2003-01-06

    申请人: Xerox Corporation

    发明人: Kubby, Joel A.

    IPC分类号: B81B3/00 G02F1/025

    摘要: A silicon structure is at least partially thermally isolated from a substrate (210) by a gap (232) formed in an insulation layer (230) disposed between the substrate (210) and a silicon layer (220) in which the silicon structure is formed. In embodiments, the substrate (210) is made of silicon and the silicon layer (220) is made of single crystal silicon. In embodiments, the gap (232) is formed such that a surface of the substrate (210) under the gap (232) is maintained substantially unetched. In other embodiments, the gap (232) is formed without affecting the surface of the substrate (210) underlying the gap (232). In particular, the gap (232) may be formed by removing a portion of the insulation layer (230) with an etch that does not affect the surface of the substrate (210) underlying the gap. In embodiments the etch is highly selective between the material of the insulation layer (230) and the material of the substrate (210). The etch selectivity may be about 20:1 or greater.