摘要:
Provided are methods of forming multi-layered optical data storage media which include a high-density data layer, as well as multi-layered optical data storage media that can be formed by such methods.
摘要:
Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.
摘要:
In a first aspect, methods are provided that comprise : (a) applying a curable composition on a substrate; (b) applying a hardmask composition above the curable composition; (c) applying a photoresist composition layer above the hard mask composition, wherein one or more of the compositions are removed in an ash-free process. In a second aspect, methods are provided that comprise (a) applying an organic composition on a substrate; (b) applying a photoresist composition layer above the organic composition, wherein the organic composition comprises a material that produce an alkaline-soluble group upon thermal and/or radiation treatment. Related compositions also are provided.
摘要:
The present invention is directed to semiconductor wafer processing to provide semiconductor wafers having reduced defects. More specifically, the present invention is directed to semiconductor wafer processing to provide semicondutor wafers having reduced defects processed in wafer holding articles with reduced surface roughness.
摘要:
Structures including a capacitor dielectric material disposed on the surface of an electrode suitable for use in forming capacitors are disclosed. Methods of forming such structures are also disclosed. The invention provides a structure including an electrode having first and second surfaces and a capacitor dielectric material disposed on the first surface of the electrode, wherein the first surface of first electrode has an average roughness or Ra value of ≤ 200 nm, an average maximum peak-to-valley height or Rz (din) value of ≤ 2000 nm, and a waviness or W value of ≤ 250 nm. Also provided by the present invention is a structure including an electrode having first and second surfaces, a barrier layer disposed on the first surface of the elctrode and a capacitor dielectric material disposed on the barrier layer, wherein the barrier layer is an electrodeposited nickel layer and containing
摘要:
Antireflective underlying coating compositions are provided for use with an overcoated photoresist composition. In one aspect, the coating composition can be crosslinked and comprise one or more components that contain one or more acid-labile groups and/or one or more base-reactive groups that are reactive following crosslinking. In another aspect, underlying coating composition are provided that can be treated to provide a modulated water contact angle. Preferred underlying coating compositions can exhibit enhanced etch rates in plasma etchants. Additional preferred coating compositions can enhance lithographic performance of an associated photoresist composition.
摘要:
The present invention relates to new polymers that contain phenolic groups spaced from a polymer backbone and photoacid-labile group. Preferred polymers of the invention are useful as a component of chemically-amplified positive-acting resists.