Abstract:
The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry coupled to the array an array of memory cells via a sense line. The sensing circuitry is configured to sense, as a voltage associated with a second operand of a logical function, a voltage on the sense line corresponding to a first logical data value resulting in part from reading a first memory cell of the array of memory cells associated with a first operand of the logical function.
Abstract:
A system enables memory device specific self-refresh entry and exit commands. When memory devices on a shared control bus (such as all memory devices in a rank) are in self-refresh, a memory controller can issue a device specific command with a self-refresh exit command and a unique memory device identifier to the memory device. The controller sends the command over the shared control bus, and only the selected, identified memory device will exit self-refresh while the other devices will ignore the command and remain in self-refresh. The controller can then execute data access over a shared data bus with the specific memory device while the other memory devices are in self-refresh.
Abstract:
The present disclosure includes apparatuses and methods for providing power availability information to memory. A number of embodiments include a memory and a controller. The controller is configured to provide power and power availability information to the memory, and the memory is configured to determine whether to adjust its operation based, at least in part, on the power availability information.
Abstract:
Various embodiments of systems and methods are disclosed for reducing volatile memory standby power in a portable computing device. One such method involves receiving a request for a volatile memory device to enter a standby power mode. One or more compression parameters are determined for compressing content stored in a plurality of banks of the volatile memory device. The stored content is compressed based on the one or more compression parameters to free-up at least one of the plurality of banks. The method disables self-refresh of at least a portion of one or more of the plurality of banks freed-up by the compression during the standby power mode.
Abstract:
A control method for a data reception chip. The data reception chip includes a voltage generation module including a plurality of resistors and a selection unit. The resistors are connected in series with one another and divide an operation voltage to generate a plurality of divided voltages. The selection unit selects one of the divided voltages as a reference voltage according to a control signal. The control method includes controlling the selection unit to set the level of the reference voltage to an initial level; receiving data and comparing the data with the reference voltage to generate a compared result; determining whether the compared result is equal to predetermined data; and directing the selection unit to select another divided voltage when the compared result is not equal to the pre-determined data.
Abstract:
Techniques for adjusting swing voltage for an I/O interface signal are described herein. In one embodiment, a device (201) comprises an input/output (I/O) interface (210), and an I/O voltage controller (205). The I/O voltage controller (205) is configured to determine a frequency or temperature of the I/O interface (210), and to adjust a swing voltage of the I/O interface based at least in part upon the determined frequency or temperature.
Abstract:
The present disclosure includes apparatuses and methods for providing power availability information to memory. A number of embodiments include a memory and a controller. The controller is configured to provide power and power availability information to the memory, and the memory is configured to determine whether to adjust its operation based, at least in part, on the power availability information.
Abstract:
The invention relates to integrated CMOS circuits with very low power consumption at rest, and especially volatile SRAM memories. The inverters of the circuit are formed by an nMOS transistor and a pMOS transistor. According to the invention, a biasing circuit applies a first reverse bias voltage NBIAS to the wells of the nMOS transistors and a second reverse bias voltage PBIAS to the wells of the pMOS transistors. The biasing circuit comprises: a detecting array (SN) formed by many inverters in parallel, having a common output (SN_out) delivering a logic signal the value of which depends on the reverse bias voltages applied to the array; a circuit (CTRL, SA) for producing incrementing or decrementing pulses, controlled by the output of the detecting array; and an integrating circuit (BFP, BFN) connected to the pulse producing circuit, in order to produce and gradually vary, incrementally in response to these pulses, a biasing voltage PBIAS and a biasing voltage NBIAS.