摘要:
A power amplifier includes a two-dimensional matrix of N×M active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately N×M the output power of each of the active cells.
摘要:
One method of processing microphone input in an ADC to determine microphone configuration is to process the microphone input signals in two processing paths, in which one processing path processes a difference between differential input signals and another processing path processes an average value of the differential input signals. The outputs of these processing paths may be combined to generate a digital signal representative of the analog signal from the microphone. The digital signal contains a digital version of the audio in the environment around the microphone, but may also be used to detect microphone topology and configure aspects of the processing paths to match the detected microphone topology. An apparatus for an ADC may implement the two processing paths as two delta-sigma modulator loops.
摘要:
An amplifier (107, 109) operates to provide a high output impedance at an output (208) through a push stage having a first transistor (M1) of a first transistor type and a pull stage having a second transistor (M2) of a second transistor type that is different from the first transistor type. The first transistor (M1) and the second transistor (M2) are coupled in a common-gate configuration. The first transistor and the second transistor are shorted together via a capacitor (C1) coupled to an input and share a common current path as a push-pull current-reusing common-gate low noise amplifier with a broadband input matching.
摘要:
The invention relates to a variable capacitor circuit (100) comprising a plurality of MOS capacitors (110), each MOS capacitor being implemented by a MOS transistor with the gate terminal connected to a first voltage signal (Vs) and with the drain terminal shorted with the source terminal and connected to a second voltage signal (Vc), said MOS capacitors being connected in parallel through the gate terminal connected to the first voltage signal (Vs), and being operated in a cut-off region (120) in which the equivalent capacitance (C) of each MOS capacitor remains substantially constant for variations of the first voltage signal. The invention also relates to a method for compensating a capacitance mismatch in a biomedical signal acquisition system using the described variable capacitor circuit (100).
摘要:
Dispositif de correction de la bande passante d'un transformateur à entrefer (modelisé par 100+101+102+104), présentant une fréquence de coupure, caractérisé en ce qu'il comporte un filtre (201-207) destiné à être relié en série avec le transformateur, et en ce que le filtre est adapté pour amplifier le signal qu'il reçoit du transformateur pour des fréquences inférieures à la fréquence de coupure du transformateur, de sorte que la bande passante du transformateur équipé du dispositif de correction est augmentée et présente une fréquence de coupure inférieure à celle du transformateur.
摘要:
An amplifier circuit whose frequency response has almost no soft knee characteristic or no peak when inverting input capacitance Csin varies and when feedback capacitance Cf is a fixed value of small capacitance is provided. The amplifier circuit includes a plurality of amplifiers (U1, U2) each of which negative feedback is provided to and which are connected in series, and a feedback circuit (4, 8, 12) which is connected to an output side of an amplifier near output (U2) of the amplifier circuit and an input side of an amplifier near input (U1) of the amplifier circuit. These amplifiers are ones in the plurality of amplifiers. One or odd numbers of amplifiers in the plurality of amplifiers are inverting amplifiers.
摘要:
A CMOS amplifier with integrated tunable band-pass function, a tunable active resistor structure, a method of amplifying an input signal and a method of fabricating an amplifier. The tunable active resistor structure comprises two symmetrically cross-coupled transistors.
摘要:
A CMOS transconductor for cancelling third-order intermodulation is provided. The transconductor includes a transconductance circuit and a tuneable distortion circuit. The transconductance circuit takes an input voltage and generates an output current having a transconductance element and an IM3 element. The distortion circuit takes the same input voltage and generates a current having an IM3 element of equal amplitude and opposite phase to the IM3 element of the transconductance circuit. A controller circuit tunes the distortion circuit to adjust its IM3 element to substantially equal the amplitude of the IM3 of the transconductance circuit. The distortion and transconductance circuits are arranged to sum their output currents thereby effectively cancelling the IM3 elements, leaving the transconductance relatively unmodified.
摘要:
A circuit arrangement that stacks a modulator and automatic gain control (AGC) amplifier so as to re-use the modulator output current to drive the AGC amplifier, thereby saving power consumption and avoiding an unnecessary signal transformation between the two stages. A balanced circuit topology is used. The modulation signal can be selected over a wide range (100 MHz to 5.4 GHz) and the circuit arrangement is therefore particularly suitable for wireless applications (e.g. GSM-EDGE) and for integrated circuit fabrication.
摘要:
Circuit d'accord dans lequel un oscillateur local est constitué d'un amplificateur qui est couplé à un cicuit résonant du type à inductance et capacité variable, l'amplificateur comportant un premier étage formé d'au moins une paire différentielle de transistors bipolaires (T1, T2). Selon l'invention, l'amplificateur comporte encore un deuxième étage avec une autre paire différentielle de transistors dont les émetteurs réunis sont alimentés par le courant collecteur de l'un (T2) des transistors du premier étage. Un transistor (T3) de la paire différentielle du deuxième étage a son collecteur qui débite sur une résistance de charge principale (RL) et sa base qui est couplée au collecteur de l'autre (T1) transistor du premier étage, lequel débite sur une résistance de charge annexe (Rb). La base de l'autre transistor (T4) de la paire différentielle du deuxième étage peut être polarisée à tension fixe (Vref2) ou encore à tension variable, de phase appropriée. Application : à la réception de signaux de télévision couvrant une large bande de fréquences.