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公开(公告)号：EP4453803A1
公开(公告)日：2024-10-30
申请号：EP21840623.9
申请日：2021-12-21
发明人： SCHREIBER, Lars , BLUHM, Hendrik , KÜNNE, Matthias
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公开(公告)号：EP4445298A2
公开(公告)日：2024-10-16
申请号：EP22905021.6
申请日：2022-12-06
申请人： Yale University
发明人： SAHAY, Kaavya , PURI, Shruti , CLAES, Jahan
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公开(公告)号：EP4439673A1
公开(公告)日：2024-10-02
申请号：EP23210904.1
申请日：2023-11-20
申请人： Intel Corporation
IPC分类号： H01L29/06 , H01L21/283 , H01L29/423 , H01L21/336 , H01L29/775 , B82Y10/00
CPC分类号： H01L29/42392 , B82Y10/00 , H01L29/66439 , H01L29/0673 , H01L29/775 , H01L21/283 , H01L29/78696
摘要： Integrated circuit structures having backside gate connection are described. In an example, an integrated circuit structure includes a plurality of horizontally stacked nanowires or a fin. A gate stack is over the plurality of horizontally stacked nanowires or the fin. An epitaxial source or drain structure is at an end of the plurality of horizontally stacked nanowires or the fin. A conductive gate-to-contact connection is vertically beneath the epitaxial source or drain structure and vertically beneath and in electrical contact with the gate stack.
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公开(公告)号：EP4435866A1
公开(公告)日：2024-09-25
申请号：EP24155903.8
申请日：2024-02-06
发明人： CHEN, Lun-Chun , HO, Ping-Lung
IPC分类号： H01L29/06 , B82Y10/00 , H10B20/25 , G11C17/16 , H01L29/423 , H01L29/775
CPC分类号： H10B20/25 , H01L29/0673 , B82Y10/00 , H01L29/42392 , G11C17/16 , H01L29/775
摘要： An antifuse-type one time programming memory includes a first memory cell. The first memory cell includes at least one antifuse transistor. The antifuse transistor is forksheet transistor. The antifuse transistor includes a first nanowire, a first gate structure, a first drain/source structure and a second drain/source structure. A first-portion surface of the first nanowire is contacted with the isolation wall. A second-portion surface of the first nanowire is contacted with the first gate structure. The first gate structure includes a first spacer, a second spacer, a first gate dielectric layer and a first gate layer. The first drain/source structure is electrically contacted with a first terminal of the first nanowire. The second drain/source structure is electrically contacted with a second terminal of the first nanowire.
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公开(公告)号：EP4434093A1
公开(公告)日：2024-09-25
申请号：EP22809115.3
申请日：2022-10-25
IPC分类号： H01L29/775 , H01L27/088 , H01L21/336 , H01L29/06 , H01L29/51 , H01L21/8234 , B82Y10/00
CPC分类号： B82Y10/00 , H01L29/66439 , H01L29/775 , H01L29/0673 , H01L27/088 , H01L21/823462 , H01L29/513 , H01L29/517 , H01L21/823412
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公开(公告)号：EP4434077A1
公开(公告)日：2024-09-25
申请号：EP22899645.0
申请日：2022-11-29
发明人： DOHERTY, Marcus , OBERG, Lachlan , WEBER, Cedric , SERGEIEVA, Tetiana , PAKES, Chris , SCHENK, Alex , STACEY, Alastair
IPC分类号： H01L21/02 , B28B3/00 , B82Y10/00 , B82Y40/00 , G01Q60/10 , C30B23/02 , C30B25/18 , C30B29/04 , G06N10/40
CPC分类号： B82Y10/00 , B82Y40/00 , G01Q60/10 , G06N10/40 , C30B29/04 , G01Q80/00 , C30B25/186 , C30B25/205 , H01L29/1602 , H01L21/02376 , H01L21/02527 , H01L21/0262 , H01L21/02433 , H01L21/02639 , H01L21/02642 , H01L21/0259 , H01L21/02444 , H01L21/02494 , H01L21/02631 , H01L29/66977 , H01L29/32 , H01L29/34
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公开(公告)号：EP4433960A1
公开(公告)日：2024-09-25
申请号：EP22896678.4
申请日：2022-11-16
申请人： D-Wave Systems Inc.
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公开(公告)号：EP3606417B1
公开(公告)日：2024-08-28
申请号：EP18780746.6
申请日：2018-04-03
IPC分类号： A61B5/053 , B82Y5/00 , H05K1/02 , H05K3/00 , H05K3/28 , A61B5/11 , B82Y10/00 , A61B5/282 , A61B5/291 , A61B5/296 , A61B5/00 , H05K1/03
CPC分类号： B82Y5/00 , B82Y10/00 , A61B5/11 , A61B5/6814 , A61B5/6823 , A61B5/6824 , A61B2562/020920130101 , A61B2562/021920130101 , A61B2562/16420130101 , H05K1/0283 , H05K3/284 , H05K3/0035 , H05K1/0313 , H05K2201/0956320130101 , H05K2201/0950920130101 , H05K2201/013320130101 , H05K2201/0926320130101 , A61B5/282 , A61B5/291 , A61B5/296 , H05K2201/011220130101
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公开(公告)号：EP3997509B1
公开(公告)日：2024-07-31
申请号：EP20742177.7
申请日：2020-07-06
CPC分类号： G02B3/0087 , G02B27/0905 , G02B19/0028 , G02B19/0047 , G02B21/32 , B82Y10/00 , G06N10/00 , G02B27/0955 , G02B27/0983 , B82Y20/00
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