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    Film forming method of magnesium oxide film, and method of manufacturing plasma generation electrode
    91.
    发明专利
    Film forming method of magnesium oxide film, and method of manufacturing plasma generation electrode 有权
    氧化镁膜的成膜方法及制造等离子体生成电极的方法

    公开(公告)号：JP2011246736A

    公开(公告)日：2011-12-08

    申请号：JP2010118045

    申请日：2010-05-24

    Applicant: Air Water Inc ,  エア・ウォーター株式会社

    Inventor： KIYOKAWA TOSHIO ,  MINAMI RYOHEI

    IPC: C23C16/40 ,  H01J9/02 ,  H01J11/02 ,  H01J11/22 ,  H01J11/34 ,  H01J11/40

    Abstract: PROBLEM TO BE SOLVED: To easily and efficiently form a magnesium oxide film with excellent transparency without using an expensive device.SOLUTION: A raw material aqueous solution is prepared wherein 10g of magnesium acetate tetrahydrate is dissolved in 190g of water, and 2g of ethylene glycol is added. The raw material aqueous solution is put in an atomization container 21 of a raw material atomization device 2, and a temperature of a substrate 8 set on a bottom part of a reaction space 61 is increased to 400°C by a heater 7. By operating an ultrasonic vibrator 22, the raw material aqueous solution is atomized, and raw material gas with mist of the raw material aqueous solution carried in air is supplied to the reaction space 61. When the raw material gas flows along a surface of the substrate 8, the magnesium oxide film is formed on the surface of the substrate 8. It is confirmed that transmissivity of the formed film is not degraded even when a thickness increases. In addition, it is confirmed that the same result is obtained even when diethylene glycol is used in stead of the ethylene glycol.

    Abstract translation: 要解决的问题：为了容易且有效地形成具有优异透明性的氧化镁膜，而不使用昂贵的装置。 解决方案：制备其中10g的四水合乙酸镁溶解在190g水中的原料水溶液，加入2g乙二醇。 将原料水溶液放入原料雾化装置2的雾化容器21内，通过加热器7将设置在反应空间61的底部的基板8的温度升高至400℃。通过操作 超声波振动器22将原料水溶液雾化，将原料水溶液的空气中的原料气体送入空气。当原料气体沿着基板8的表面流动时， 氧化镁膜形成在基板8的表面上。即使厚度增加，也可以确认所形成的膜的透射率不降低。 此外，确认即使使用二甘醇代替乙二醇也能得到相同的结果。 版权所有（C）2012，JPO＆INPIT

    METHOD FOR PRODUCING SINGLE-CRYSTAL 3C-SiC SUBSTRATE, AND RESULTING SINGLE-CRYSTAL 3C-SiC SUBSTRATE
    92.
    发明专利
    METHOD FOR PRODUCING SINGLE-CRYSTAL 3C-SiC SUBSTRATE, AND RESULTING SINGLE-CRYSTAL 3C-SiC SUBSTRATE 有权
    用于生产单晶3C- SiC衬底的方法和结晶单晶3C- SiC衬底

    公开(公告)号：JP2011225421A

    公开(公告)日：2011-11-10

    申请号：JP2010286949

    申请日：2010-12-24

    Applicant: Air Water Inc ,  エア・ウォーター株式会社

    Inventor： ASAMURA HIDETOSHI ,  KAWAMURA KEISUKE ,  OBARA SATOSHI

    IPC: C30B29/36 ,  C30B25/20 ,  H01L21/20 ,  H01L21/205

    CPC classification number: H01L21/0262 ,  C30B25/02 ,  C30B29/36 ,  H01L21/0237 ,  H01L21/02447 ,  H01L21/02494 ,  H01L21/02529 ,  H01L21/02614 ,  H01L21/02661 ,  Y10T428/24355

    Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a single-crystal 3C-SiC substrate with which it is possible to greatly reduce surface defects generated during epitaxial growth process and thereby simplify subsequent steps while ensuring quality as a semiconductor device.SOLUTION: There is provided the method for producing the single-crystal 3C-SiC substrate to form a single-crystal 3C-SiC layer on a base substrate by epitaxial growth. The method includes a first growth step in which the single-crystal 3C-SiC layer is formed so as to have a very flat surface state in which surface pits are scattered, and a second growth step in which the single-crystal 3C-SiC layer obtained by the first growth step is further subjected to epitaxial growth such that the surface pits in the surface are buried in a region where desorption is rate-limited.

    Abstract translation: 要解决的问题：提供一种用于制造单晶3C-SiC衬底的方法，其可以大大减少在外延生长工艺期间产生的表面缺陷，从而简化随后的步骤，同时确保作为半导体器件的质量。 解决方案：提供了通过外延生长在基底基板上制造单晶3C-SiC衬底以形成单晶3C-SiC层的方法。 该方法包括第一生长步骤，其中形成单晶3C-SiC层以具有表面凹坑散布的非常平坦的表面状态;以及第二生长步骤，其中单晶3C-SiC层 通过第一生长步骤获得的表面进一步进行外延生长，使得表面中的表面凹坑被掩埋在解吸速率限制的区域中。 版权所有（C）2012，JPO＆INPIT

    Manufacturing method of bis(3-amino-4-hydroxyphenyl)
    93.
    发明专利
    Manufacturing method of bis(3-amino-4-hydroxyphenyl) 审中-公开
    BIS（3-氨基-4-羟基苯基）的制备方法

    公开(公告)号：JP2011190191A

    公开(公告)日：2011-09-29

    申请号：JP2010055935

    申请日：2010-03-12

    Applicant: Air Water Inc ,  Sumitomo Bakelite Co Ltd ,  エア・ウォーター株式会社 ,  住友ベークライト株式会社

    Inventor： NAKAMA WATARU ,  IDA YUTAKA

    IPC: C07C213/02 ,  C07C215/80

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing bis(3-amino-4-hydroxyphenyl) in a high yield at a high purity. SOLUTION: The method for obtaining bis(3-amino-4-hydroxyphenyl) comprises reducing bis(3-nitro-4-hydroxyphenyl) in the presence of a palladium catalyst, where hydrogen is employed as a reducing agent and the reaction is performed in a tetrahydrofuran solvent. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 待解决的问题：以高产率提供高纯度双（3-氨基-4-羟基苯基）的制备方法。 解决方案：获得双（3-氨基-4-羟基苯基）的方法包括在钯催化剂存在下还原双（3-硝基-4-羟基苯基），其中使用氢作为还原剂，反应 在四氢呋喃溶剂中进行。 版权所有（C）2011，JPO＆INPIT

    Metal mesh fabric for screen printing, method for manufacturing the same, and screen plate
    100.
    发明专利
    Metal mesh fabric for screen printing, method for manufacturing the same, and screen plate 有权
    用于丝网印刷的金属网布，其制造方法和筛板

    公开(公告)号：JP2011011480A

    公开(公告)日：2011-01-20

    申请号：JP2009158363

    申请日：2009-07-03

    Applicant: Air Water Inc ,  Nakanuma Art Screen Kk ,  エア・ウォーター株式会社 ,  中沼アートスクリーン株式会社

    Inventor： AOKI KANJI ,  NAKAJIRI HIDEYUKI ,  YOSHIDA KAZUHIRO

    IPC: B41N1/24 ,  C22C38/00 ,  C22C38/58 ,  D01F9/08 ,  D03D1/00 ,  D03D9/00 ,  D03D15/02

    Abstract: PROBLEM TO BE SOLVED: To provide a metal mesh fabric for screen printing which can perform a screen printing of a high accuracy and a high density in an electronic related field.SOLUTION: For this metal mesh fabric for screen printing, a wire of which the matrix includes an austenitic stainless steel is woven into a mesh fabric. On the surface layer part of the wire, a carbon solid solution cured layer of which the hardness is higher than that of the matrix is formed when the solid solution of carbon occurs on the austenite phase of the matrix. The breaking strength in the vertical direction as the mesh fabric is from 1,000 to 2,600 MPa, the elongation at break is from 1 to 8%, and the 1% yield strength is from 900 to 2,400 MPa. The breaking strength in the lateral direction as the mesh fabric is from 1,200 to 3,400 MPa, the elongation at break is from 0.8 to 6%, and the 1% yield strength is from 900 to 2,800 MPa.

    Abstract translation: 要解决的问题：提供一种用于丝网印刷的金属网状织物，其可以在电子相关领域中执行高精度和高密度的丝网印刷。解决方案：对于用于丝网印刷的金属网状织物，其中 基体包括将奥氏体不锈钢编织成网状织物。 在线的表层部分，当碳的固溶体发生在基体的奥氏体相上时，形成硬度高于基体的碳固溶固化层。 作为网状织物的上下方向的断裂强度为1000〜2600MPa，断裂伸长率为1〜8％，1％屈服强度为900〜2400MPa。 作为网状织物的横向断裂强度为1200〜3400MPa，断裂伸长率为0.8〜6％，1％屈服强度为900〜2800MPa。

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