Abstract:
PROBLEM TO BE SOLVED: To provide a load drive control device that can keep on driving a load as long as possible.SOLUTION: A first gate drive section 33 supplies gates of first switching elements 35, 37 with first gate driving currents indicating charging/discharge currents to/from the gates of the first switching elements 35, 37, to drive the gates of the first switching elements 35, 37. A first slope variation circuit 16increases the first gate driving currents by a unit amount when an ambient temperature of the first switching elements 35, 37 is equal to or higher than a threshold H1, and decreases the first gate driving currents by a unit amount when the ambient temperature of the first switching elements 35, 37 is equal to or lower than a threshold L1.
Abstract:
PROBLEM TO BE SOLVED: To set an appropriate dead time.SOLUTION: A switch drive circuit 20 includes: a switch signal generation section 23 for generating switch signals S1 and S2 to complementarily turn on/off switches 11 and 12 connected in series between an end of application of an input voltage Vi and an end of application of a ground voltage GND; driver sections 21 and 22 for generating gate signals G1 and G2 in response to the input of the switch signals S1 and S2; and a dead time setting section 24 for setting dead times Td1 and Td2 to keep both switches 11 and 12 off. At least either of the driver sections 21 and 22 includes a slew rate setting section for varying a slew rate of the gate signals G1, G2 according to a slew rate setting signal Sc. The dead time setting section 24 controllingly varies at least either of the dead times Td1 and Td2 according to at least either of the slew rate setting signal Sc and the input voltage Vi.
Abstract:
PROBLEM TO BE SOLVED: To inhibit capacity decline of a capacitor caused by parasitic capacitance of a semiconductor element.SOLUTION: In a voltage lower control circuit 10 which forms a DC-DC converter 16 provided in an IC 12, an end of a capacitor 36 for bootstrap is connected to an LX node 26A and the other end of the capacitor 36 is connected to a node 38B having higher potential than the LX node. In a transistor Ma, an N well 44 formed on a Psub is connected to the node 38B, and a P well 46 formed in the N well and a source S formed in the P well are connected to the LX node. With this configuration, parasitic capacitance between the N well and the P well of the transistor functions as electrostatic capacitance for bootstrap thereby to inhibit capacity decline of the electrostatic capacitance for bootstrap.
Abstract:
A method and apparatus for use in a digitally tuning a capacitor in an integrated circuit device is described. A Digitally Tuned Capacitor DTC is described which facilitates digitally controlling capacitance applied between a first and second terminal. In some embodiments, the first terminal comprises an RF+ terminal and the second terminal comprises an RF- terminal. In accordance with some embodiments, the DTCs comprise a plurality of sub-circuits ordered in significance from least significant bit (LSB) to most significant bit (MSB) sub-circuits, wherein the plurality of significant bit sub-circuits are coupled together in parallel, and wherein each sub-circuit has a first node coupled to the first RF terminal, and a second node coupled to the second RF terminal. The DTCs further include an input means for receiving a digital control word, wherein the digital control word comprises bits that are similarly ordered in significance from an LSB to an MSB. Each significant bit of the digital control word is coupled to corresponding and associated significant bit sub-circuits of the DTC, and thereby controls switching operation of the associated sub-circuit. DTCs are implemented using unit cells, wherein the LSB sub-circuit comprises a single unit cell. Next significant bit sub-circuits comprise x instantiations of the number of unit cells used to implement its associated and corresponding previous significant bit sub-circuit, wherein the value x is dependent upon a weighting coding used to weight the significant bit sub-circuits of the DTC. DTCs may be weighted in accordance with a binary code, thermometer code, a combination of the two, or any other convenient and useful code. In many embodiments, the unit cell comprises a plurality of stacked FETs in series with a capacitor. The unit cell may also include a plurality of gate resistors R G coupled to the gates of the stacked FETs, and a plurality of R DS resistors coupled across the drain and source of the stacked FETs. The stacked FETs improve the power handling capabilities of the DTC, allowing it meet or exceed high power handling requirements imposed by current and future communication standards.
Abstract:
PROBLEM TO BE SOLVED: To provide a power device control circuit that inexpensively reconciles EMI noise suppression and switching loss suppression.SOLUTION: A power device control circuit 200 for inputting a gate drive signal into a gate terminal 100a of a power device 100 includes: a control signal input circuit 2 for receiving a power device control signal 1a for controlling the power device 100; a drive system control circuit 4 connected to the control signal input circuit 2; a drive circuit 5 with a plurality of drive systems 5a, 5b, 5c for driving the power device 100 on receipt of a drive circuit control signal 1c from the drive system control circuit 4; and a timer circuit 3 for selecting the drive system 5b in response to the drive circuit control signal 1c a fixed time after the input of a predetermined signal, that is, the power device control signal 1a to change a driving capability of the drive system control circuit 4 to drive the power device 100.