公开(公告)号：KR1020080096483A

公开(公告)日：2008-10-30

申请号：KR1020080039531

申请日：2008-04-28

申请人： 르네사스 일렉트로닉스 가부시키가이샤

发明人： 무또구니하루 ,  하따도시유끼 ,  사또히로시 ,  오까히로이 ,  이께다오사무

IPC分类号： H01L23/48

CPC分类号： H01L23/49582 ,  H01L23/49503 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/544 ,  H01L24/05 ,  H01L24/29 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/77 ,  H01L24/78 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L29/0615 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2223/54406 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/4103 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/78 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84205 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01054 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/83205

摘要： A semiconductor device is provided to obtain a surface mounting package having a small on-resistance and to make the surface mounting package small and to improve the production yield and reliability. A silicon chip(3) is mounted on a die pad part having a lead(4) consisting of a drain lead. A source pad(7) and a gate pad(8) is formed in the main surface. The back side of the silicon chip is a drain of a power MOSFET, contacting with an upper part of the die pad using Ag paste. A lead and source pad as a source lead is connected by a Al ribbon(10), and a lead and a gate pad as a gate lead is connected by a Au wire(11).

摘要翻译： 提供半导体器件以获得具有小导通电阻的表面安装封装并且使表面安装封装较小并且提高生产成品率和可靠性。 硅芯片（3）安装在具有由引线组成的引线（4）的管芯焊盘部分上。 源极焊盘（7）和栅极焊盘（8）形成在主表面上。 硅芯片的背面是功率MOSFET的漏极，使用Ag膏与芯片焊盘的上部接触。 作为源极引线的引线和源极焊盘通过Al带（10）连接，并且作为栅极引线的引线和栅极焊盘通过Au导线（11）连接。