화합물 및 그 제조 방법, 포지티브형 레지스트 조성물 및레지스트 패턴 형성 방법
    9.
    发明公开
    화합물 및 그 제조 방법, 포지티브형 레지스트 조성물 및레지스트 패턴 형성 방법 失效
    化合物,其生产方法,阳性组合物和形成耐药性图案的方法

    公开(公告)号:KR1020080038232A

    公开(公告)日:2008-05-02

    申请号:KR1020087006532

    申请日:2006-09-13

    摘要: Disclosed is a compound represented by the general formula (A-1) below (wherein R's respectively represent a hydrogen atom or an acid-cleavable dissolution inhibiting group, and at least one of them represents an acid-cleavable dissolution inhibiting group; R11-R17 respectively represent an alkyl group having 1-10 carbon atoms or an aromatic hydrocarbon group and may include a heteroatom in the structure; g and j respectively represent an integer of not less than 1, k and q respectively represent an integer of not less than 0, and g + j + k + q is not more than 5; a represents an integer of 1-3; b represents an integer of not less than 1, l and m respectively represent an integer of not less than 0, and b + l + m is not more than 4; c represents an integer of not less than 1, n and o respectively represent an integer of not less than 0, and c + n + o is not more than 4; and A represents a group represented by the general formula (Ia) below, a group represented by the general formula (Ib) below or an alicyclic group).

    摘要翻译: 公开了由下述通式(A-1)表示的化合物(其中R分别表示氢原子或酸可裂解溶解抑制基团,并且其至少一个表示酸可裂解溶解抑制基团; R11-R17 分别表示具有1-10个碳原子的烷基或芳族烃基,并且可以在结构中包括杂原子; g和j分别表示不小于1的整数,k和q分别表示不小于0的整数 ,g + j + k + q不大于5; a表示1-3的整数; b表示不小于1的整数,l和m分别表示不小于0的整数,b + l + m不大于4; c表示不小于1的整数,n和o分别表示不小于0的整数,c + n + o不大于4; A表示 通过下述通式(Ia)表示的通式(I)表示的基团 b)或脂环族基团)。