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公开(公告)号：US12126709B2
公开(公告)日：2024-10-22
申请号：US17670463
申请日：2022-02-13
发明人： Moshe Alon , Ziv Hershman
CPC分类号： H04L9/0631 , H04L9/003 , G06F21/60 , G06F21/602 , G06F21/72 , G06F21/755 , H04L9/065 , H04L63/0428 , H04L2209/16
摘要： In one embodiment, a processing device includes a symmetric block cipher configured to encrypt plaintext blocks yielding respective ciphertext blocks, obfuscation circuitry configured to obfuscate the respective ciphertext blocks responsively to an obfuscation secret yielding respective obfuscated ciphertext blocks and an interface to send the respective obfuscated ciphertext blocks to at least one remote processing device. In one embodiment, the processing device provides side-channel attack protection within a symmetric key scheme by data obfuscation and by changing encryption/decryption keys using key manipulation so that different blocks or group of blocks of data are encrypted/decrypted using respective encryption/decryption keys.
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2.发明公开公开(公告)号：US20240312881A1
公开(公告)日：2024-09-19
申请号：US18674329
申请日：2024-05-24
发明人： Toshifumi ISHIDA , Kouki YAMAMOTO
IPC分类号： H01L23/495 , H01L23/00
CPC分类号： H01L23/49562 , H01L24/16 , H01L24/40 , H01L24/73 , H01L2224/16227 , H01L2224/40245 , H01L2224/73255
摘要： A power storage pack includes: a power storage cell; a power storage tab; a protection circuit substrate; a semiconductor element; and a metal plate for power storage tab joint that is connected to the semiconductor element on the first main surface of the metal plate for power storage tab joint and that includes a portion whose thickness is at most 0.2 mm. The metal plate for power storage tab joint is joined to the power storage tab on the second main surface of the metal plate for power storage tab joint to include an overlap portion in which the power storage tab, the metal plate for power storage tab joint, the semiconductor element, and the protection circuit substrate overlap each other; and there is a portion in which a region that may be the conduction path between the power storage tab and the protection circuit substrate overlaps the overlap portion.
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公开(公告)号：US20240305225A1
公开(公告)日：2024-09-12
申请号：US18658498
申请日：2024-05-08
发明人： Daisuke FUKUDA , Noriaki EMURA
摘要： A motor driving device includes: a rotor position detector that detects a rotor position of the motor; a first waveform generator that generates a first reference waveform based on the rotor position; a second waveform generator that generates a second reference waveform based on the rotor position, the second reference waveform being different from the first reference waveform; a waveform outputter that outputs, as an output waveform, the first reference waveform, the second reference waveform, or a composite waveform of the first reference waveform and the second reference waveform, based on the torque command value; and a current supplier that supplies, to the motor, a motor current generated based on the output waveform. In the motor driving device, the waveform outputter changes a composite ratio between the first reference waveform and the second reference waveform in the composite waveform, according to the torque command value.
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公开(公告)号：US12080664B2
公开(公告)日：2024-09-03
申请号：US18477224
申请日：2023-09-28
IPC分类号： H01L23/00 , H01L25/065 , H01L29/78
CPC分类号： H01L24/06 , H01L24/08 , H01L25/0655 , H01L29/7813 , H01L2224/06152 , H01L2224/08225
摘要： A semiconductor device includes: a semiconductor layer; first and second transistors; one or more first source pads and a first gate pad of the first transistor in a first region of the upper surface of the semiconductor layer; and one or more second source pads and a second gate pad of the second transistor in a second region of the upper surface adjacent to the first region in a plan view of the semiconductor layer. In a plan view of the semiconductor layer, a virtual straight line connecting the centers of the first and second gate pads passes through the center of the semiconductor layer and forms a 45 degree angle with each side of the semiconductor layer. An upper surface boundary line between the first and second regions monotonically changes in the directions of extension of the longer and shorter sides of the semiconductor layer.
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公开(公告)号：US20240291470A1
公开(公告)日：2024-08-29
申请号：US18173822
申请日：2023-02-24
发明人： Bal S. Sandhu
IPC分类号： H03K3/037 , H03K5/1252 , H03K5/133 , H03K5/135
CPC分类号： H03K3/0377 , H03K5/1252 , H03K5/133 , H03K5/135 , H03K21/00
摘要： A circuit receives an input clock pulse signal characterized by a first frequency and a first pulse width, and produces an output pulse signal characterized by a second frequency that is half of the first frequency and a second pulse width that is equal to the first pulse width. The circuit also includes a first D-flipflop, a first inverter, a first Schmitt trigger, and a first AND gate. The first D-flipflop includes a clock input terminal for receiving the input clock pulse signal and an output terminal for producing a first data output. The first inverter couples the output terminal and a data input terminal of the first D-flipflop. A first Schmitt trigger receives the input clock pulse signal and provides a first delayed input clock signal. The first AND gate receives the first data output and the first delayed input clock signal, and provides the output pulse signal.
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公开(公告)号：US20240272700A1
公开(公告)日：2024-08-15
申请号：US18432977
申请日：2024-02-05
发明人： YU-JEN CHANG
IPC分类号： G06F1/3234
CPC分类号： G06F1/3243
摘要： A microcontroller including a processing circuit, a function-controlling circuit and a first functional module is provided. The processing circuit is arranged to provide a first enabling signal in an operation mode, and stop providing the first enabling signal in a low power-consumption mode. The function-controlling circuit is electrically connected to the processing circuit, and arranged to generate a first signal in response to the first enabling signal. The first functional module electrically is connected to the function-controlling circuit, and arranged to enable a first function based on the first signal. When the first functional module receives a first triggering event, the first functional module sends a first enabling request to the function-controlling circuit. The function-controlling circuit generates the first signal in response to the first enabling request in the low power-consumption mode, so that the first functional module enables the first function.
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公开(公告)号：US20240272132A1
公开(公告)日：2024-08-15
申请号：US18441661
申请日：2024-02-14
发明人： Ming-Chih TSAI
IPC分类号： G01N33/00
CPC分类号： G01N33/0027
摘要： A sensing device and a sensing method are provided. The sensing device includes a substrate, a first unit, a second unit, a third unit, and a fourth unit. The first unit and the second unit are disposed on the substrate and connected to each other in series. The third unit and the fourth unit are disposed on the substrate and connected to each other in series. Of the first unit, the second unit, the third unit, and the fourth unit, two are reference resistors, and the other two are a first sensing unit and a second sensing unit configured to capture volatile organic compounds. At least one of the first sensing unit and the second sensing unit has different capture degrees for polar gas and nonpolar gas of the volatile organic compounds and/or has different capture degrees for protic gas and aprotic gas of the volatile organic compounds.
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公开(公告)号：US20240272106A1
公开(公告)日：2024-08-15
申请号：US18604130
申请日：2024-03-13
发明人： Ken KAWAI , Kazunari HOMMA , Koji KATAYAMA
CPC分类号： G01N27/122 , G01N33/0031 , G01N33/005 , G01N33/0073
摘要： A hydrogen detection device includes a hydrogen sensor and a detection circuit, wherein the hydrogen sensor includes: a first electrode; a second electrode; a metal oxide layer; a first insulating film (insulating film); a first terminal and a second terminal that are connected, through a via, to an other surface of the second electrode opposite a principal surface of the second electrode; and a third terminal connected, through a via, to an other surface of the first electrode opposite a principal surface of the first electrode, and the detection circuit includes: an ammeter that measures (1) a first resistance value between the first terminal and the second terminal and (2) a second resistance value between the third terminal and at least one of the first terminal or the second terminal; and a control circuit that selectively outputs one of the first resistance value or the second resistance value.
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公开(公告)号：US12062930B2
公开(公告)日：2024-08-13
申请号：US17185456
申请日：2021-02-25
发明人： Hitoshi Kobayashi
IPC分类号： H02J7/00 , G01R31/3835 , G01R31/396 , H01M10/48 , B60L58/22
CPC分类号： H02J7/0014 , G01R31/3835 , G01R31/396 , H01M10/48 , H02J7/00032 , H02J7/0048 , B60L58/22 , H02J7/0063
摘要： A cell supervising circuit includes: a measurement circuit which measures a state of charge of a secondary battery cell; a transformer which is provided for the measurement circuit to contactlessly receive power supply from a power source different from the secondary battery cell; and a communication circuit which transmits, via the transformer to a BMU which manages a status of a battery pack, the state of charge measured by the measurement circuit.
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公开(公告)号：US12051688B2
公开(公告)日：2024-07-30
申请号：US18261796
申请日：2022-09-27
IPC分类号： H01L27/02 , H01L29/06 , H01L29/78 , H01L29/866
CPC分类号： H01L27/0255 , H01L29/0692 , H01L29/7808 , H01L29/866
摘要： A semiconductor device manufacturing method includes: forming a first groove having depth H in a semiconductor layer; filling the first groove with an oxide film and forming a surface oxide film having thickness a on an upper surface of the semiconductor layer to equalize the oxide film and the surface oxide film in height; forming a second groove having depth h greater than thickness a, from an uppermost surface of a third oxide film; forming gate trenches deeper than depth H, in the semiconductor layer; depositing polysilicon until at least the gate trenches and the second groove are filled with polysilicon; forming a peripheral element by injecting an impurity into polysilicon deposited in the second groove; and making a thickness of the peripheral element equal to depth h by concurrently removing polysilicon deposited in the gate trenches and polysilicon deposited in the second groove until they become equal in height.
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