Thick damage buffer for foil-based metallization of solar cells
    4.
    发明授权
    Thick damage buffer for foil-based metallization of solar cells 有权
    用于太阳能电池箔基金属化的厚度损伤缓冲液

    公开(公告)号:US09461192B2

    公开(公告)日:2016-10-04

    申请号:US14572170

    申请日:2014-12-16

    摘要: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. A method involves patterning a first surface of a metal foil to provide a plurality of alternating grooves and ridges in the metal foil. Non-conductive material regions are formed in the grooves in the metal foil. The metal foil is located above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate to provide the non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions and to provide the ridges in alignment with the alternating N-type and P-type semiconductor regions. The ridges of the metal foil are adhered to the alternating N-type and P-type semiconductor regions. The metal foil is patterned through the metal foil from a second surface of the metal foil at regions in alignment with the non-conductive material regions.

    摘要翻译: 描述了用于太阳能电池和所得太阳能电池的箔基金属化的方法。 一种方法包括图案化金属箔的第一表面以在金属箔中提供多个交替的槽和脊。 在金属箔的凹槽中形成非导电材料区域。 金属箔位于设置在基板中或上方的多个交替的N型和P型半导体区域之上,以提供与交替的N型和P型半导体区之间的位置对准的非导电材料区域,以及 以提供与交替的N型和P型半导体区对准的脊。 金属箔的脊部粘附到交替的N型和P型半导体区域。 在与非导电材料区域对准的区域处,通过金属箔从金属箔的第二表面图案化金属箔。

    METALLIZATION OF SOLAR CELLS WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES
    5.
    发明申请
    METALLIZATION OF SOLAR CELLS WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES 审中-公开
    具有差异化P型和N型区域结构的太阳能电池的金属化

    公开(公告)号:US20160284885A1

    公开(公告)日:2016-09-29

    申请号:US14672067

    申请日:2015-03-27

    摘要: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type region architectures, and resulting solar cells, are described. In an example a solar cell includes a first emitter region of a first conductivity type disposed on a first dielectric region, the first dielectric region disposed on a surface of a substrate. A second dielectric region is disposed laterally adjacent to the first and second emitter region. The second emitter region of a second, different, conductivity type is disposed on a third dielectric region, the third dielectric region disposed on the surface of the substrate, over the second dielectric region, and partially over the first emitter region. A first metal foil is disposed over the first emitter region. A second metal foil is disposed over the second emitter region.

    摘要翻译: 描述了具有差异化的P型和N型区域结构的太阳能电池发射区的制造方法以及所得到的太阳能电池。 在一个示例中,太阳能电池包括设置在第一电介质区域上的第一导电类型的第一发射极区域,设置在基板的表面上的第一电介质区域。 第二电介质区域被布置成与第一和第二发射极区域相邻。 第二不同导电类型的第二发射极区域设置在第三电介质区域上,第三电介质区域设置在衬底的表面上,在第二电介质区域上,部分地位于第一发射极区域上。 第一金属箔设置在第一发射极区域上。 第二金属箔设置在第二发射区上。

    SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE ARCHITECTURES AND INCORPORATING DOTTED DIFFUSION
    6.
    发明申请
    SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE ARCHITECTURES AND INCORPORATING DOTTED DIFFUSION 有权
    具有差异化P型和N型结构的太阳能电池发射区制造和掺杂掺杂扩散

    公开(公告)号:US20160087122A1

    公开(公告)日:2016-03-24

    申请号:US14491045

    申请日:2014-09-19

    摘要: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.

    摘要翻译: 描述了具有差异化的P型和N型结构并结合点状扩散的太阳能电池发射极区域以及所得到的太阳能电池的方法。 在一个示例中,太阳能电池包括具有受光面和背面的基板。 第一导电类型的第一多晶硅发射极区域设置在设置在基板的背面上的第一薄介电层上。 第二不同导电类型的第二多晶硅发射极区域设置在设置在衬底背面中的多个非连续沟槽中的第二薄介电层上。

    EMITTERS OF A BACKSIDE CONTACT SOLAR CELL
    8.
    发明申请
    EMITTERS OF A BACKSIDE CONTACT SOLAR CELL 有权
    背面接触太阳能电池的发射体

    公开(公告)号:US20150380598A1

    公开(公告)日:2015-12-31

    申请号:US14318374

    申请日:2014-06-27

    IPC分类号: H01L31/18 H01L31/065

    摘要: A system and method of patterning dopants of opposite polarity to form a solar cell is described. Two dopant films are deposited on a substrate. A laser is used to pattern the N-type dopant, by mixing the two dopant films into a single film with an exposure to the laser and/or drive the N-type dopant into the substrate to form an N-type emitter. A thermal process drives the P-type dopant from the P-type dopant film to form P-type emitters and further drives the N-type dopant from the single film to either form or further drive the N-type emitter.

    摘要翻译: 描述了以相反极性构图掺杂剂以形成太阳能电池的系统和方法。 在衬底上沉积两个掺杂剂膜。 使用激光来对N型掺杂剂进行图案化,通过将两种掺杂剂膜混合成单一膜并暴露于激光器和/或将N型掺杂剂驱动到衬底中以形成N型发射体。 热处理从P型掺杂剂膜驱动P型掺杂剂以形成P型发射体,并进一步从单一膜驱动N型掺杂剂以形成或进一步驱动N型发射极。

    Laser system with multiple laser pulses for fabrication of solar cells
    10.
    发明授权
    Laser system with multiple laser pulses for fabrication of solar cells 有权
    具有多个激光脉冲制造太阳能电池的激光系统

    公开(公告)号:US08513045B1

    公开(公告)日:2013-08-20

    申请号:US13362526

    申请日:2012-01-31

    IPC分类号: H01L21/00

    摘要: A laser system with multiple laser pulses for removing material from a solar cell being fabricated. The laser system includes a single pulse laser source and a multi-pulse generator. The multi-pulse generator receives a single pulse laser beam from the single pulse laser source and converts the single pulse laser beam into a multi-pulse laser beam. A laser scanner scans the multi-pulse laser beam onto the solar cell to remove material from the solar cell.

    摘要翻译: 具有多个激光脉冲用于从太阳能电池中去除材料的激光系统被制造。 激光系统包括单脉冲激光源和多脉冲发生器。 多脉冲发生器从单脉冲激光源接收单个脉冲激光束,并将单脉冲激光束转换为多脉冲激光束。 激光扫描仪将多脉冲激光束扫描到太阳能电池上以从太阳能电池中去除材料。