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    Method of fabricating interconnections of microelectronic device using dual damascene process
    2.
    发明授权
    Method of fabricating interconnections of microelectronic device using dual damascene process 有权
    使用双镶嵌工艺制造微电子器件互连的方法

    公开(公告)号：US07553758B2

    公开(公告)日：2009-06-30

    申请号：US11532719

    申请日：2006-09-18

    申请人： Wan-jae Park ,  Hyung-yoon Choi ,  Yi-hsiung Lin ,  Tong Qing Chen

    发明人： Wan-jae Park ,  Hyung-yoon Choi ,  Yi-hsiung Lin ,  Tong Qing Chen

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/3146 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31155 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L2221/1063 ,  Y10S438/924

    摘要： Method of Fabricating Interconnections of a Microelectronic Device Using a Dual Damascene Process. A method of fabricating interconnections of a microelectronic device includes preparing a semiconductor substrate comprising a lower dielectric layer and a lower interconnection, forming an etch stopper layer and an interlayer dielectric layer on the semiconductor substrate, forming a via hole in the interlayer dielectric layer so that the etch stopper layer is exposed through the via hole, performing carbon doping on the etch stopper layer, performing trench etching to form a trench in the interlayer dielectric layer so that the trench overlaps part of the via hole, removing the carbon-doped etch stopper layer, and filling the via hole and the trench with a conductive material to form an upper interconnection.

    摘要翻译： 使用双镶嵌工艺制造微电子器件互连的方法。 制造微电子器件的互连的方法包括制备包括下电介质层和下互连的半导体衬底，在半导体衬底上形成蚀刻停止层和层间电介质层，在层间电介质层中形成通孔，使得 蚀刻阻挡层通过通孔露出，在蚀刻停止层上进行碳掺杂，进行沟槽蚀刻以在层间电介质层中形成沟槽，使得沟槽与通孔的一部分重叠，去除碳掺杂的蚀刻阻挡层 层，并且用导电材料填充通孔和沟槽以形成上互连。

    Apparatus for Practicing Golf
    3.
    发明申请
    Apparatus for Practicing Golf 审中-公开
    高尔夫练习器具

    公开(公告)号：US20160030819A1

    公开(公告)日：2016-02-04

    申请号：US14489429

    申请日：2014-09-17

    申请人： Hyung Yoon Ahn

    发明人： Hyung Yoon Ahn

    IPC分类号： A63B63/00 ,  A63B24/00 ,  A63B69/36

    CPC分类号： A63B63/00 ,  A63B24/0021 ,  A63B69/3623 ,  A63B69/3694 ,  A63B71/0622 ,  A63B2024/0034 ,  A63B2024/0043 ,  A63B2071/0694 ,  A63B2207/00 ,  A63B2207/02 ,  A63B2210/50 ,  A63B2220/30 ,  A63B2220/76 ,  A63B2220/801 ,  A63B2220/806 ,  A63B2225/09

    摘要： Provided is a target for golf practice. The target for golf practice includes a body, a sensing unit, a visual unit, and a controller. The sensing unit is disposed in the body to sense a trajectory and a speed of a driven golf ball and an impact of the golf ball on the body. The visual display unit is disposed in the body to visually display a result of a movement of the golf ball sensed by the sensing unit through flickering. The controller calculates the result of the movement of the golf ball by the sensing unit to control the flickering of the visual display unit.

    摘要翻译： 提供高尔夫练习的目标。 高尔夫练习的目标包括身体，感测单元，视觉单元和控制器。 感测单元设置在身体中以感测被驱动的高尔夫球的轨迹和速度以及高尔夫球对身体的冲击。 视觉显示单元设置在身体中以可视地显示由感测单元通过闪烁感测的高尔夫球的移动结果。 控制器通过感测单元计算高尔夫球的运动结果，以控制视觉显示单元的闪烁。

    E-cigarette
    5.
    外观设计
    E-cigarette 有权
    电子烟

    公开(公告)号：USD688415S1

    公开(公告)日：2013-08-20

    申请号：US29425077

    申请日：2012-06-20

    申请人： Hyung Yoon Kim

    设计人： Hyung Yoon Kim

    Method of fabricating light emitting diode
    6.
    发明授权
    Method of fabricating light emitting diode 有权
    制造发光二极管的方法

    公开(公告)号：US08470626B2

    公开(公告)日：2013-06-25

    申请号：US13150759

    申请日：2011-06-01

    申请人： Kwang Joong Kim ,  Chang Suk Han ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

    发明人： Kwang Joong Kim ,  Chang Suk Han ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

    IPC分类号： H01L21/00

    CPC分类号： H01L33/007

    摘要： Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas.

    摘要翻译： 本发明的示例性实施例涉及一种制造发光二极管（LED）的方法。 根据本发明的示例性实施例，该方法包括通过向室提供氮化物源气体和第一金属源气体，在第一温度下在衬底上生长第一GaN基半导体层，停止第一 金属源气体，并且在停止第一金属源气体的供给之后保持第一温度第一温度，在第一时间段之后将衬底的温度降低到第二温度，生长第一GaN的有源层 在第二温度下通过向腔室供应第二金属源气体。

    Method of Fabricating Interconnections of Microelectronic Device Using Dual Damascene Process
    7.
    发明申请
    Method of Fabricating Interconnections of Microelectronic Device Using Dual Damascene Process 有权
    使用双镶嵌工艺制造微电子器件互连的方法

    公开(公告)号：US20080070409A1

    公开(公告)日：2008-03-20

    申请号：US11532719

    申请日：2006-09-18

    申请人： Wan-jae Park ,  Hyung-yoon Choi ,  Yi-hsiung Lin ,  Tong Qing Chen

    发明人： Wan-jae Park ,  Hyung-yoon Choi ,  Yi-hsiung Lin ,  Tong Qing Chen

    IPC分类号： H01L21/44

    CPC分类号： H01L21/3146 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31155 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L2221/1063 ,  Y10S438/924

    摘要： Method of Fabricating Interconnections of a Microelectronic Device Using a Dual Damascene Process. A method of fabricating interconnections of a microelectronic device includes preparing a semiconductor substrate comprising a lower dielectric layer and a lower interconnection, forming an etch stopper layer and an interlayer dielectric layer on the semiconductor substrate, forming a via hole in the interlayer dielectric layer so that the etch stopper layer is exposed through the via hole, performing carbon doping on the etch stopper layer, performing trench etching to form a trench in the interlayer dielectric layer so that the trench overlaps part of the via hole, removing the carbon-doped etch stopper layer, and filling the via hole and the trench with a conductive material to form an upper interconnection.

    摘要翻译： 使用双镶嵌工艺制造微电子器件互连的方法。 制造微电子器件的互连的方法包括制备包括下电介质层和下互连的半导体衬底，在半导体衬底上形成蚀刻停止层和层间电介质层，在层间电介质层中形成通孔，使得 蚀刻阻挡层通过通孔露出，在蚀刻停止层上进行碳掺杂，进行沟槽蚀刻以在层间电介质层中形成沟槽，使得沟槽与通孔的一部分重叠，去除碳掺杂的蚀刻阻挡层 层，并且用导电材料填充通孔和沟槽以形成上互连。

    Oil feeding apparatus for reciprocating compressor
    9.
    发明申请
    Oil feeding apparatus for reciprocating compressor 审中-公开
    往复式压缩机供油装置

    公开(公告)号：US20050139428A1

    公开(公告)日：2005-06-30

    申请号：US11023496

    申请日：2004-12-29

    申请人： Seong-Yeol Hyun ,  Hyung Yoon ,  Jong Choi ,  Chang-Jae Kim ,  Jin-Taek Oh

    发明人： Seong-Yeol Hyun ,  Hyung Yoon ,  Jong Choi ,  Chang-Jae Kim ,  Jin-Taek Oh

    IPC分类号： F04B39/02 ,  F01M1/00 ,  F04B35/04 ,  F16N7/04 ,  F25B9/00

    CPC分类号： F16N7/04

    摘要： An oil feeding apparatus for a reciprocating compressor comprises: a frame unit; an oil cylinder positioned at a lower portion of the frame unit and vibrating together with the frame unit; an oil flow passage formed in the frame unit to be communicated with the oil cylinder; an oil valve placed at the frame unit, for opening/closing the oil flow passage; an oil piston movably-inserted in the oil cylinder; and springs for elastically supporting the oil piston, wherein the frame unit and the oil cylinder are integrally formed with each other. According to this, components therefor can be simplified, a distortion of the components during an assembling process can be prevented, and an oil leakage and an oil contamination can be also effectively prevented.

    摘要翻译： 一种用于往复式压缩机的给油装置，包括：一个框架单元; 油缸，其位于所述框架单元的下部并与所述框架单元一起振动; 形成在框架单元中以与油缸连通的油流通道; 放置在框架单元处的用于打开/关闭油流通道的油阀; 可活动地插入油缸中的油活塞; 以及用于弹性地支撑油活塞的弹簧，其中框架单元和油缸彼此一体地形成。 据此，可以简化其组件，可以防止组装过程中的部件变形，并且还可以有效地防止漏油和油污染。

    CLOCK-BASED SOFT-START CIRCUIT AND POWER MANAGEMENT INTEGRATED CIRCUIT DEVICE
    10.
    发明申请
    CLOCK-BASED SOFT-START CIRCUIT AND POWER MANAGEMENT INTEGRATED CIRCUIT DEVICE 有权
    基于时钟的软启动电路和电源管理集成电路设备

    公开(公告)号：US20130265807A1

    公开(公告)日：2013-10-10

    申请号：US13713615

    申请日：2012-12-13

    申请人： Kyoung-Jin Lee ,  Hee- Mun Bang ,  Hyoung-Seok Oh ,  Je-Hyung Yoon

    发明人： Kyoung-Jin Lee ,  Hee- Mun Bang ,  Hyoung-Seok Oh ,  Je-Hyung Yoon

    IPC分类号： G05F1/46

    CPC分类号： G05F1/468 ,  H02M1/32 ,  H02M1/36 ,  H02M3/156

    摘要： In a clock-based soft-start circuit configured to generate a soft-start reference voltage that restrains an inrush current at an initialization of power supplied to a DC-DC converter, the clock-based soft-start circuit comprises a time setting unit configured to set a soft-start time period in response to a clock signal. A ramp circuit is configured to generate a soft-start reference voltage which is ramped upward or downward between a base level and a reference voltage level during the soft start time period set by the time setting unit. In this manner, the clock-based soft-start circuit is applicable for all DC-DC converters and the soft-start in a linear slope is possible.

    摘要翻译： 在基于时钟的软启动电路中，基于时钟的软启动电路被配置为产生在提供给DC-DC转换器的电源的初始化时抑制浪涌电流的软启动基准电压，所述基于时钟的软启动电路包括： 以响应于时钟信号设置软启动时间段。 斜坡电路被配置为产生在由时间设置单元设置的软启动时间段期间在基准电平和基准电压电平之间上升或下降的软启动基准电压。 以这种方式，基于时钟的软启动电路适用于所有DC-DC转换器，并且可以在线性斜率中进行软启动。