公开(公告)号：US08977196B2

公开(公告)日：2015-03-10

申请号：US13562834

申请日：2012-07-31

Applicant: Kyu Sik Cho ,  In Sook Kim

Inventor： Kyu Sik Cho ,  In Sook Kim

IPC: H04B5/00 ,  H01Q7/00 ,  H01Q1/24

CPC classification number: H01Q7/00 ,  H01Q1/243 ,  H01Q21/00 ,  H04B5/02

Abstract: A near field communication antenna device of a mobile terminal is provided. The near field communication antenna device includes a window including a display region for transmitting an image displayed by a display and a black mark region formed around the display region, a multi-layer Flexible Printed Circuit Board (FPCB) on which a plurality of layers are laminated on the lower side of the black mark region of the window, and a spiral loop-shaped antenna pattern in which conductive lines are formed on respective layers of the multi-layer FPCB and are connected to each other. Accordingly, a near field communication antenna is not disposed in a separated installation space, an antenna pattern width can be reduced, and performance of the near field communication antenna may be prevented from being degraded when a battery cover is made of metal or has a curved shape.

Abstract translation: 提供了一种移动终端的近场通信天线装置。 近场通信天线装置包括：窗口，其包括用于发送由显示器显示的图像的显示区域和形成在显示区域周围的黑色标记区域;多层柔性印刷电路板（FPCB），多层柔性印刷电路板 层叠在窗口的黑色标记区域的下侧，并且螺旋形环状天线图案，其中在多层FPCB的各个层上形成导电线并且彼此连接。 因此，近场通信天线不设置在分离的安装空间中，可以减小天线图案宽度，并且可以防止当电池盖由金属制成时具有弯曲的近场通信天线的性能劣化 形状。

公开(公告)号：US20130306461A1

公开(公告)日：2013-11-21

申请号：US13982473

申请日：2011-07-04

Applicant: Seong-Hoon Yue ,  Yong-Bae Jung ,  In-Sook Kim ,  Min-Hee Lee ,  Jung Cho

Inventor： Seong-Hoon Yue ,  Yong-Bae Jung ,  In-Sook Kim ,  Min-Hee Lee ,  Jung Cho

IPC: H03K17/96

CPC classification number: H03K17/962 ,  G06F3/044 ,  G06F2203/04103 ,  Y10T156/10

Abstract: The present invention provides a capacitive touch panel and a manufacturing method thereof, wherein the capacitive touch panel includes a first transparent substrate in which an upper transparent electrode and an upper metal interconnect electrode are formed on the lower side thereof; a transparent adhesive portion; and a second transparent substrate in which a lower transparent electrode and a lower metal interconnect electrode are formed on the upper side thereof. More specifically, the invention provides a capacitive touch panel with excellent visibility since an expensive ITO transparent electrode is replaced with conductive materials such as CNT and graphene and the touch panel has an electrode pattern of a specific structure.

Abstract translation: 本发明提供一种电容式触控面板及其制造方法，其特征在于：电容式触控面板包括：第一透明基板，其上部透明电极和上部金属互连电极在其下侧形成; 透明粘合剂部分; 以及在其上侧形成有下部透明电极和下部金属配线电极的第二透明基板。 更具体地说，本发明提供了一种电容式触摸面板，因为昂贵的ITO透明电极被诸如CNT和石墨烯之类的导电材料代替，并且触摸面板具有特定结构的电极图案。

公开(公告)号：US20130078917A1

公开(公告)日：2013-03-28

申请号：US13562834

申请日：2012-07-31

Applicant: Kyu Sik CHO ,  In Sook KIM

Inventor： Kyu Sik CHO ,  In Sook KIM

IPC: H01F38/14 ,  H04B5/00

CPC classification number: H01Q7/00 ,  H01Q1/243 ,  H01Q21/00 ,  H04B5/02

Abstract: A near field communication antenna device of a mobile terminal is provided. The near field communication antenna device includes a window including a display region for transmitting an image displayed by a display and a black mark region formed around the display region, a multi-layer Flexible Printed Circuit Board (FPCB) on which a plurality of layers are laminated on the lower side of the black mark region of the window, and a spiral loop-shaped antenna pattern in which conductive lines are formed on respective layers of the multi-layer FPCB and are connected to each other. Accordingly, a near field communication antenna is not disposed in a separated installation space, an antenna pattern width can be reduced, and performance of the near field communication antenna may be prevented from being degraded when a battery cover is made of metal or has a curved shape.

公开(公告)号：US06998162B2

公开(公告)日：2006-02-14

申请号：US10441122

申请日：2003-05-20

Applicant: In-kyeong Yoo ,  Soo-hwan Jeong ,  In-sook Kim

Inventor： In-kyeong Yoo ,  Soo-hwan Jeong ,  In-sook Kim

IPC: B32B3/02

CPC classification number: G11B7/26 ,  G11B7/24035 ,  G11B7/241 ,  Y10T428/21

Abstract: An optical recording medium having a phase transition material film and a method of manufacturing the optical recording medium are provided. In the method, first, a phase transition material film, a sacrificial film, and a metal film are sequentially stacked on a substrate. Next, the metal film is anodized to form a metal oxide film having a plurality of holes, and portions of the sacrificial film exposed through the holes are anode-oxidized to form oxide films. Thereafter, the phase transition material film is patterned by removing the metal oxide film and by etching the sacrificial film and the phase transition material film using the oxide films as a mask. Then, the oxide films are removed from the sacrificial film, and an upper insulation film, a reflection film, and a protection film are deposited on the upper surface of the patterned phase transition material film. The optical recording medium can be simply manufactured by using a self-alignment method and can have a highly-integrated large-capacity memory.

Abstract translation: 提供具有相变材料膜的光记录介质和制造光记录介质的方法。 在该方法中，首先，将相变材料膜，牺牲膜和金属膜依次层叠在基板上。 接下来，金属膜被阳极化以形成具有多个孔的金属氧化物膜，并且通过孔露出的部分牺牲膜被阳极氧化以形成氧化物膜。 此后，通过去除金属氧化物膜并且通过使用氧化膜作为掩模蚀刻牺牲膜和相变材料膜来对相变材料膜进行图案化。 然后，从牺牲膜上除去氧化物膜，并且在图案化的相变材料膜的上表面上沉积上绝缘膜，反射膜和保护膜。 光记录介质可以通过使用自对准方法简单地制造，并且可以具有高度集成的大容量存储器。

公开(公告)号：US06815681B2

公开(公告)日：2004-11-09

申请号：US10465600

申请日：2003-06-20

Applicant: Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon ,  In-sook Kim

Inventor： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon ,  In-sook Kim

IPC: H01J3700

CPC classification number: H01J37/3175 ,  H01J2237/31781

Abstract: An electron beam lithography apparatus, which uses a patterned emitter, includes a pyroelectric plate emitter that emits electrons using a patterned metal thin layer formed on the pyroelectric plate as a mask. When the emitter is heated, electrons are emitted from portions of the emitter covered with a patterned dielectric layer, and not from portions of the emitter covered with a patterned metal thin layer, and a pattern of the emitter is thereby projected onto a substrate. To prevent dispersion of emitted electron beams, the electron beams may be controlled by a permanent magnet, an electro-magnet, or a deflector unit. A one-to-one or x-to-one projection of a desired pattern on the substrate is thereby obtained.

Abstract translation: 使用图案化发射器的电子束光刻设备包括使用形成在热电板上的图案化金属薄层作为掩模发射电子的热电板发射器。 当发射极被加热时，电子从被图案化电介质层覆盖的发射体的部分发射，而不是由图案化的金属薄层覆盖的发射体的部分发射，并且因此将发射极的图案投影到衬底上。 为了防止发射的电子束的分散，电子束可以由永磁体，电磁体或偏转器单元来控制。 从而获得在衬底上所需图案的一对一或一对一投影。

公开(公告)号：US20130095308A1

公开(公告)日：2013-04-18

申请号：US13807419

申请日：2011-09-16

Applicant: In-Sook Kim ,  Jung Cho

Inventor： In-Sook Kim ,  Jung Cho

IPC: H01B5/14

CPC classification number: H01B5/14 ,  G02B1/16 ,  G06F3/044 ,  G06F3/045 ,  G06F2203/04103 ,  Y10T428/24942 ,  Y10T428/2495

Abstract: A transparent conductive film having excellent visibility and a method of manufacturing the same are disclosed. The transparent conductive film having excellent visibility includes a transparent film; an undercoating layer formed on the transparent film; and a conductive layer formed on the undercoating layer, wherein the undercoating layer includes a first low refractive index layer formed of a material having an index of refraction of 1.4 to 1.46 at a lower side of the conductive layer, and a high refractive index layer formed of silicon oxynitride having an index of refraction of 1.7 to 2.0 between the first low refractive index layer and the transparent film.

Abstract translation: 公开了一种具有优异的透明导电膜及其制造方法。 具有优异的可见度的透明导电膜包括透明膜; 形成在透明膜上的底涂层; 以及形成在底涂层上的导电层，其中底涂层包括由导电层的下侧的折射率为1.4至1.46的材料形成的第一低折射率层和形成的高折射率层 的第一低折射率层和透明膜之间的折射率为1.7〜2.0的氮氧化硅。

公开(公告)号：US20080257861A1

公开(公告)日：2008-10-23

申请号：US11882112

申请日：2007-07-30

Applicant: In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

Inventor： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

IPC: B44C1/22

CPC classification number: B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

Abstract: A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

Abstract translation: 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

公开(公告)号：US07901586B2

公开(公告)日：2011-03-08

申请号：US11882112

申请日：2007-07-30

Applicant: In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

Inventor： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

IPC: B44C1/22 ,  H01L21/302

CPC classification number: B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

Abstract: A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

Abstract translation: 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

公开(公告)号：US06913984B2

公开(公告)日：2005-07-05

申请号：US10743377

申请日：2003-12-23

Applicant: In-sook Kim ,  Sun-ae Seo ,  In-kyeong Yoo ,  Soo-hwan Jeong

Inventor： In-sook Kim ,  Sun-ae Seo ,  In-kyeong Yoo ,  Soo-hwan Jeong

IPC: B82B1/00 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/06 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L21/76

CPC classification number: B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/792 ,  Y10S977/723 ,  Y10S977/774

Abstract: A method of fabricating memory with nano dots includes sequentially depositing a first insulating layer, a charge storage layer, a sacrificial layer, and a metal layer on a substrate in which source and drain electrodes are formed, forming a plurality of holes on the resultant structure by anodizing the metal layer and oxidizing portions of the sacrificial layer that are exposed through the holes, patterning the charge storage layer to have nano dots by removing the oxidized metal layer, and etching the sacrificial layer and the charge storage layer using the oxidized sacrificial layer as a mask, and removing the oxidized sacrificial layer, depositing a second insulating layer and a gate electrode on the patterned charge storage layer, and patterning the first insulating layer, the patterned charge storage layer, the second insulating layer, and the gate electrode to a predetermined shape, for forming memory having uniformly distributed nano-scale storage nodes.

Abstract translation: 利用纳米点制造存储器的方法包括在形成源极和漏极的衬底上依次沉积第一绝缘层，电荷存储层，牺牲层和金属层，在所得结构上形成多个孔 通过阳极氧化金属层并氧化通过孔露出的牺牲层的部分，通过去除氧化的金属层将电荷存储层图案化成具有纳米点，并且使用氧化的牺牲层蚀刻牺牲层和电荷存储层 作为掩模，并且去除氧化的牺牲层，在图案化的电荷存储层上沉积第二绝缘层和栅电极，并且将第一绝缘层，图案化电荷存储层，第二绝缘层和栅电极图案化，以 用于形成具有均匀分布的纳米级存储节点的存储器的预定形状。

公开(公告)号：US09608628B2

公开(公告)日：2017-03-28

申请号：US13982473

申请日：2012-07-04

Applicant: Seong-Hoon Yue ,  Yong-Bae Jung ,  In-Sook Kim ,  Min-Hee Lee ,  Jung Cho

Inventor： Seong-Hoon Yue ,  Yong-Bae Jung ,  In-Sook Kim ,  Min-Hee Lee ,  Jung Cho

IPC: G06F3/045 ,  H03K17/96 ,  G06F3/044

CPC classification number: H03K17/962 ,  G06F3/044 ,  G06F2203/04103 ,  Y10T156/10

Abstract: The present invention provides a capacitive touch panel and a manufacturing method thereof, wherein the capacitive touch panel includes a first transparent substrate in which an upper transparent electrode and an upper metal interconnect electrode are formed on the lower side thereof; a transparent adhesive portion; and a second transparent substrate in which a lower transparent electrode and a lower metal interconnect electrode are formed on the upper side thereof. More specifically, the invention provides a capacitive touch panel with excellent visibility since an expensive ITO transparent electrode is replaced with conductive materials such as CNT and graphene and the touch panel has an electrode pattern of a specific structure.