In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration
    2.
    发明授权
    In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration 有权
    用于以预定浓度输送稀释气体的原位气体混合和稀释系统

    公开(公告)号:US07325560B2

    公开(公告)日:2008-02-05

    申请号:US11453700

    申请日:2006-06-15

    Abstract: Apparatus and method for delivery of dilute active fluid, e.g., to a downstream active fluid-consuming process unit of a semiconductor manufacturing plant. The delivery system includes an active fluid source, a diluent fluid source, a fluid flow metering device for dispensing of the active fluid at a predetermined flow rate, a mixer arranged to mix active gas from the active fluid source that is dispensed at such predetermined flow rate by the fluid flow metering device, with diluent fluid to form a diluted active fluid mixture, and a monitor arranged to measure concentration of active fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device, to control the dispensing rate of the active fluid, and maintain a predetermined concentration of active fluid in the diluted active fluid mixture.

    Abstract translation: 用于将稀释的活性流体递送到半导体制造工厂的下游有源流体消耗处理单元的装置和方法。 输送系统包括主动流体源,稀释液流体源,用于以预定流速分配活性流体的流体流量计量装置,设置成混合来自主动流体源的活性气体的混合器,该活性气体以预定流量分配 通过流体流量计量装置利用稀释液形成稀释的活性流体混合物,以及监测器,其布置成测量稀释的活性流体混合物中活性流体的浓度,并且响应地调节流体流量计量装置以控制分配速率 的活性流体,并且在稀释的活性流体混合物中保持预定浓度的活性流体。

    METHOD OF FORMING ULTRA-SHALLOW JUNCTIONS FOR SEMICONDUCTOR DEVICES
    4.
    发明申请
    METHOD OF FORMING ULTRA-SHALLOW JUNCTIONS FOR SEMICONDUCTOR DEVICES 审中-公开
    形成用于半导体器件的超微结点的方法

    公开(公告)号:US20100112795A1

    公开(公告)日:2010-05-06

    申请号:US12570995

    申请日:2009-09-30

    Abstract: A first method for producing a doped region in a semiconductor substrate includes performing a first implant step in which a carborane cluster molecule is implanted into a semiconductor substrate to form a doped region. A second method for producing a semiconductor device having a shallow junction region includes providing a first gas and a second gas in a container. The first gas includes a first dopant and the second gas includes a second dopant. The second method also includes implanting the first and second dopants into a semiconductor substrate using an ion. The ion source is not turned off between the steps of implanting the first dopant and implanting the second dopant.

    Abstract translation: 用于在半导体衬底中制造掺杂区域的第一种方法包括进行第一注入步骤,其中将碳硼烷簇分子注入到半导体衬底中以形成掺杂区域。 用于制造具有浅结区域的半导体器件的第二种方法包括在容器中提供第一气体和第二气体。 第一气体包括第一掺杂剂,第二气体包括第二掺杂剂。 第二种方法还包括使用离子将第一和第二掺杂剂注入到半导体衬底中。 离子源在植入第一掺杂剂和注入第二掺杂剂的步骤之间不被关闭。

    In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration
    7.
    发明授权
    In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration 失效
    用于以预定浓度输送稀释气体的原位气体混合和稀释系统

    公开(公告)号:US07063097B2

    公开(公告)日:2006-06-20

    申请号:US10402759

    申请日:2003-03-28

    Abstract: Apparatus and method for delivery of dilute active fluid, e.g., to a downstream active fluid-consuming process unit of a semiconductor manufacturing plant. The delivery system includes an active fluid source, a diluent fluid source, a fluid flow metering device for dispensing of the active fluid at a predetermined flow rate, a mixer arranged to mix active gas from the active fluid source that is dispensed at such predetermined flow rate by the fluid flow metering device, with diluent fluid to form a diluted active fluid mixture, and a monitor arranged to measure concentration of active fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device, to control the dispensing rate of the active fluid, and maintain a predetermined concentration of active fluid in the diluted active fluid mixture.

    Abstract translation: 用于将稀释的活性流体递送到半导体制造工厂的下游有源流体消耗处理单元的装置和方法。 输送系统包括主动流体源,稀释液流体源,用于以预定流量分配活性流体的流体流量计量装置,设置成混合来自主动流体源的活性气体的混合器,该活性气体以预定流量分配 通过流体流量计量装置利用稀释液形成稀释的活性流体混合物,以及监测器,其布置成测量稀释的活性流体混合物中活性流体的浓度,并且响应地调节流体流量计量装置以控制分配速率 的活性流体,并且在稀释的活性流体混合物中保持预定浓度的活性流体。

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