公开(公告)号：US08242030B2

公开(公告)日：2012-08-14

申请号：US12566870

申请日：2009-09-25

申请人： James B. Hannon ,  Fenton R. McFeely ,  Satoshi Oida ,  John J. Yurkas

发明人： James B. Hannon ,  Fenton R. McFeely ,  Satoshi Oida ,  John J. Yurkas

IPC分类号： H01L21/461 ,  H01L21/31

CPC分类号： H01L29/16

摘要： A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer includes subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.

摘要翻译： 电活化具有形成在碳化硅层上的一个或多个石墨烯层的结构的方法包括对该结构进行氧化处理，以形成设置在碳化硅层和一个或多个石墨烯的最底部之间的氧化硅层 从而电激活最底层的石墨烯层。

公开(公告)号：US20090008725A1

公开(公告)日：2009-01-08

申请号：US11773160

申请日：2007-07-03

申请人： Supratik Guha ,  Fenton R. McFeely ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  John J. Yurkas

发明人： Supratik Guha ,  Fenton R. McFeely ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  John J. Yurkas

IPC分类号： H01L29/76 ,  H01L21/3205

CPC分类号： H01L21/28088 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method of forming an electropositive metal-containing capping layer atop a stack of a high k gate dielectric/interfacial layer that avoids chemically and physically altering the high k gate dielectric and the interfacial layer is provided. The method includes chemical vapor deposition of an electropositive metal-containing precursor at a temperature that is about 400° C. or less. The present invention also provides semiconductor structures such as, for example, MOSCAPs and MOSFETs, that include a chemical vapor deposited electropositive metal-containing capping layer atop a stack of a high k gate dielectric and an interfacial layer. The presence of the CVD electropositive metal-containing capping layer does not physically or chemically alter the high k gate dielectric and the interfacial layer.

公开(公告)号：US20080311745A1

公开(公告)日：2008-12-18

申请号：US12197845

申请日：2008-08-25

申请人： Ricky Amos ,  Douglas A. Buchanan ,  Cyril Cabral, JR. ,  Alessandro C. Callegari ,  Supratik Guha ,  Hyungjun Kim ,  Fenton R. McFeely ,  Vijay Narayanan ,  Kenneth P. Rodbell ,  John J. Yurkas

发明人： Ricky Amos ,  Douglas A. Buchanan ,  Cyril Cabral, JR. ,  Alessandro C. Callegari ,  Supratik Guha ,  Hyungjun Kim ,  Fenton R. McFeely ,  Vijay Narayanan ,  Kenneth P. Rodbell ,  John J. Yurkas

IPC分类号： H01L21/44

CPC分类号： H01L29/495 ,  H01L21/28079 ,  H01L21/3003

摘要： A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO2, Al2O3 and other suitable dielectric materials makes it compatible with post-processing temperatures up to 1000° C. A low temperature/low pressure CVD technique with Re2(CO)10 as the source material is used when Re is to be deposited.

摘要翻译： 描述了通过使用Re，Rh，Pt，Ir或Ru金属制造CMOS栅电极的方法和包含这种栅电极的CMOS结构。 这些金属的工作功能使其与当前的pFET要求兼容。 例如，金属可以承受生产适当钝化界面而不经历化学变化所需的高氢气压力。 金属在介电层上的热稳定性如SiO 2，Al 2 O 3和其它合适的介电材料使其与后处理温度高达1000℃相兼容。具有Re2（CO）10作为源的低温/低压CVD技术 当Re沉积时使用材料。

公开(公告)号：US20080164580A1

公开(公告)日：2008-07-10

申请号：US11621381

申请日：2007-01-09

申请人： Jennifer L. Gardner ,  Fenton R. Mc Feely ,  John J. Yurkas

发明人： Jennifer L. Gardner ,  Fenton R. Mc Feely ,  John J. Yurkas

IPC分类号： H01L23/00 ,  H01L21/71

CPC分类号： H01L21/76877 ,  C23C16/30 ,  H01L21/28556 ,  H01L21/32051 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683

摘要： A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge), antimony (Sb) and nitrogen (N) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of nitrogen-doped GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In some embodiments, the inventive method is a non-selective CVD process, which means that the nitrogen-doped GeSb materials are deposited equally well on insulating and non-insulating materials. In other embodiments, a selective CVD process is provided in which the nitrogen-doped GeSb materials are deposited only on regions of a substrate in a metal which is capable of forming an eutectic alloy with germanium.

摘要翻译： 提供了用于沉积包括锗（Ge），锑（Sb）和氮（N）在内的材料的化学气相沉积（CVD）方法，其在一些实施例中具有填充高纵横比开口的能力。 本发明的CVD方法允许在宽范围的值范围内控制氮掺杂的GeSb化学计量，并且本发明的方法在低于400℃的衬底温度下进行，这使得本发明的方法与现有的互连 工艺和材料。 在一些实施例中，本发明的方法是非选择性CVD工艺，这意味着氮掺杂的GeSb材料在绝缘和非绝缘材料上同样良好地沉积。 在其它实施例中，提供了选择性CVD工艺，其中氮掺杂的GeSb材料仅沉积在能够与锗形成共晶合金的金属中的基底的区域上。

公开(公告)号：US07863083B2

公开(公告)日：2011-01-04

申请号：US12197845

申请日：2008-08-25

申请人： Ricky Amos ,  Douglas A. Buchanan ,  Cyril Cabral, Jr. ,  Alessandro C. Callegari ,  Supratik Guha ,  Hyungjun Kim ,  Fenton R. McFeely ,  Vijay Narayanan ,  Kenneth P. Rodbell ,  John J. Yurkas

发明人： Ricky Amos ,  Douglas A. Buchanan ,  Cyril Cabral, Jr. ,  Alessandro C. Callegari ,  Supratik Guha ,  Hyungjun Kim ,  Fenton R. McFeely ,  Vijay Narayanan ,  Kenneth P. Rodbell ,  John J. Yurkas

IPC分类号： H01L21/00 ,  H01L21/76 ,  H01L21/266 ,  H01L21/425

CPC分类号： H01L29/495 ,  H01L21/28079 ,  H01L21/3003

摘要： A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO2, Al2O3 and other suitable dielectric materials makes it compatible with post-processing temperatures up to 1000° C. A low temperature/low pressure CVD technique with Re2(CO)10 as the source material is used when Re is to be deposited.

摘要翻译： 描述了通过使用Re，Rh，Pt，Ir或Ru金属制造CMOS栅电极的方法和包含这种栅电极的CMOS结构。 这些金属的工作功能使其与当前的pFET要求兼容。 例如，金属可以承受生产适当钝化界面而不经历化学变化所需的高氢气压力。 金属在介电层上的热稳定性如SiO 2，Al 2 O 3和其它合适的介电材料使其与后处理温度高达1000℃相兼容。具有Re2（CO）10作为源的低温/低压CVD技术 当Re沉积时使用材料。

公开(公告)号：US07820474B2

公开(公告)日：2010-10-26

申请号：US11621389

申请日：2007-01-09

申请人： Supratik Guha ,  Fenton R. Mc Feely ,  John J. Yurkas

发明人： Supratik Guha ,  Fenton R. Mc Feely ,  John J. Yurkas

IPC分类号： H01L21/00

CPC分类号： C23C16/04 ,  C23C16/30 ,  Y10T428/12528

摘要： A chemical vapor deposition (CVD) method for selectively depositing GeSb materials onto a surface of a substrate is provided in which a metal that is capable of forming an eutectic alloy with germanium is used to catalyze the growth of the GeSb materials. A structure is also provided that includes a GeSb material located on preselected regions of a substrate. In accordance with the present invention, the GeSb material is sandwiched between a lower metal layer used to catalyze the growth of the GeSb and an upper surface metal layer that forms during the growth of the GeSb material.

摘要翻译： 提供了一种用于选择性地将GeSb材料沉积到衬底表面上的化学气相沉积（CVD）方法，其中能够与锗形成共晶合金的金属用于催化GeSb材料的生长。 还提供了一种结构，其包括位于基底的预选区域上的GeSb材料。 根据本发明，GeSb材料夹在用于催化GeSb生长的下金属层和GeSb材料生长期间形成的上表面金属层之间。

公开(公告)号：US07772120B2

公开(公告)日：2010-08-10

申请号：US11621381

申请日：2007-01-09

申请人： Jennifer L. Gardner ,  Fenton R. Mc Feely ,  John J. Yurkas

发明人： Jennifer L. Gardner ,  Fenton R. Mc Feely ,  John J. Yurkas

IPC分类号： H01L21/44

CPC分类号： H01L21/76877 ,  C23C16/30 ,  H01L21/28556 ,  H01L21/32051 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683

摘要： A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge), antimony (Sb) and nitrogen (N) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of nitrogen-doped GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In some embodiments, the inventive method is a non-selective CVD process, which means that the nitrogen-doped GeSb materials are deposited equally well on insulating and non-insulating materials. In other embodiments, a selective CVD process is provided in which the nitrogen-doped GeSb materials are deposited only on regions of a substrate in a metal which is capable of forming an eutectic alloy with germanium.

摘要翻译： 提供了用于沉积包括锗（Ge），锑（Sb）和氮（N）在内的材料的化学气相沉积（CVD）方法，其在一些实施例中具有填充高纵横比开口的能力。 本发明的CVD方法允许在宽范围的值范围内控制氮掺杂的GeSb化学计量，并且本发明的方法在低于400℃的衬底温度下进行，这使得本发明的方法与现有的互连 工艺和材料。 在一些实施例中，本发明的方法是非选择性CVD工艺，这意味着氮掺杂的GeSb材料在绝缘和非绝缘材料上同样良好地沉积。 在其它实施例中，提供了选择性CVD工艺，其中氮掺杂的GeSb材料仅沉积在能够与锗形成共晶合金的金属中的基底的区域上。

公开(公告)号：US07749802B2

公开(公告)日：2010-07-06

申请号：US11621365

申请日：2007-01-09

申请人： Fenton R. McFeely ,  Alejandro G. Schrott ,  John J. Yurkas

发明人： Fenton R. McFeely ,  Alejandro G. Schrott ,  John J. Yurkas

IPC分类号： H01L21/00 ,  H01L21/82 ,  H01L21/20

CPC分类号： C23C16/30 ,  H01L21/28556 ,  H01L21/76877 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  Y10T428/249994

摘要： A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge) and antimony (Sb) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In addition to the above, the inventive method is a non-selective CVD process, which means that the GeSb materials are deposited equally well on insulating and non-insulating materials.

摘要翻译： 提供了一种用于沉积包括锗（Ge）和锑（Sb）在内的材料的化学气相沉积（CVD）方法，其在一些实施例中具有填充高纵横比开口的能力。 本发明的CVD方法允许在宽范围的值范围内控制GeSb化学计量，并且本发明的方法在低于400℃的衬底温度下进行，这使得本发明的方法与现有的互连工艺和材料兼容 。 除了上述之外，本发明的方法是非选择性CVD工艺，这意味着GeSb材料在绝缘和非绝缘材料上同样良好地沉积。

公开(公告)号：US20100009164A1

公开(公告)日：2010-01-14

申请号：US12540923

申请日：2009-08-13

申请人： Fenton R. McFeely ,  Alejandro G. Schrott ,  John J. Yurkas

发明人： Fenton R. McFeely ,  Alejandro G. Schrott ,  John J. Yurkas

IPC分类号： B32B3/26

CPC分类号： C23C16/30 ,  H01L21/28556 ,  H01L21/76877 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  Y10T428/249994

摘要： A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge) and antimony (Sb) which, in some embodiments, has the ability to fill high aspect ratio openings is provided The CVD method of the instant invention permits for the control of GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In addition to the above, the inventive method is a non-selective CVD process, which means that the GeSb materials are deposited equally well on insulating and non-insulating materials.

摘要翻译： 提供了一种用于沉积包括锗（Ge）和锑（Sb）在内的材料的化学气相沉积（CVD）方法，其在一些实施例中具有填充高纵横比开口的能力。本发明的CVD方法允许控制 在宽范围的值范围内的GeSb化学计量和本发明的方法在低于400℃的衬底温度下进行，这使得本发明的方法与现有的互连工艺和材料相兼容。 除了上述之外，本发明的方法是非选择性CVD工艺，这意味着GeSb材料在绝缘和非绝缘材料上同样良好地沉积。

公开(公告)号：US20080166586A1

公开(公告)日：2008-07-10

申请号：US11621389

申请日：2007-01-09

申请人： Supratik Guha ,  Fenton R. McFeely ,  John J. Yurkas

发明人： Supratik Guha ,  Fenton R. McFeely ,  John J. Yurkas

IPC分类号： H01L29/12 ,  C23C16/00

CPC分类号： C23C16/04 ,  C23C16/30 ,  Y10T428/12528

摘要： A chemical vapor deposition (CVD) method for selectively depositing GeSb materials onto a surface of a substrate is provided in which a metal that is capable of forming an eutectic alloy with germanium is used to catalyze the growth of the GeSb materials. A structure is also provided that includes a GeSb material located on preselected regions of a substrate. In accordance with the present invention, the GeSb material is sandwiched between a lower metal layer used to catalyze the growth of the GeSb and an upper surface metal layer that forms during the growth of the GeSb material.

摘要翻译： 提供了一种用于选择性地将GeSb材料沉积到衬底表面上的化学气相沉积（CVD）方法，其中能够与锗形成共晶合金的金属用于催化GeSb材料的生长。 还提供了一种结构，其包括位于基底的预选区域上的GeSb材料。 根据本发明，GeSb材料夹在用于催化GeSb生长的下金属层和GeSb材料生长期间形成的上表面金属层之间。