摘要:
A scan control unit for generating two-dimensional coordinates for performing a scan with an electron beam of an electron scanning microscope is provided with first and second transforming units for transforming coordinates in the horizontal (X) direction and the vertical (V) direction. An area to be tested in a sample is scanned with an electron beam in an arbitrary direction. As the first and second transforming units, small-capacity transformation tables (LUTs) capable of operating at high speed in each of the horizontal (X) direction and the vertical (Y) direction are used. By also using a large-capacity transformation table (LUT) that stores coordinate transformation data corresponding to plural scan types, a test apparatus compatible with the plural scan types, having multiple functions, and capable of performing high-speed scan control is realized.
摘要:
Disclosed is a semiconductor wafer testing apparatus that resolves the following problems which arise when semiconductor wafers become larger: (1) complexity of stage acceleration/deceleration control; (2) throughput reduction; and (3) increased vibration of the stage support platform during the stage inversion operation (deterioration in resolution). In the semiconductor wafer testing apparatus for resolving these problems, a wafer is rotated, an electro beam is irradiated onto the rotating wafer from a scanning electron microscope, and secondary electrons emitted from the wafer are detected. The detected secondary electrons are A/D converted by an image processing unit, realigned by an image data realignment unit, and then image-processed for display. As a result, image information of all dies of a wafer can be acquired without a large amount of movement of the stage in the X and the Y directions.
摘要:
A scan control unit for generating two-dimensional coordinates for performing a scan with an electron beam of an electron scanning microscope is provided with first and second transforming units for transforming coordinates in the horizontal (X) direction and the vertical (V) direction. An area to be tested in a sample is scanned with an electron beam in an arbitrary direction. As the first and second transforming units, small-capacity transformation tables (LUTs) capable of operating at high speed in each of the horizontal (X) direction and the vertical (Y) direction are used. By also using a large-capacity transformation table (LUT) that stores coordinate transformation data corresponding to plural scan types, a test apparatus compatible with the plural scan types, having multiple functions, and capable of performing high-speed scan control is realized.
摘要:
The present invention relates to a DRAM stacked packages, a DIMM, a method for testing them, and a semiconductor manufacturing method. According to the present invention, there is provided a DRAM stacked package comprising: a plurality of stacked DRAMs; external terminals to which test equipment is connected, said external terminals being used to input/output at least address, command, and data; and an interface chip provided between said plurality of stacked DRAMs and said external terminals. The plurality of DRAMs and the interface chip are implemented on a package. The interface chip comprises: a test circuit including: an algorithmic pattern generator for generating a test pattern used to test the plurality of DRAMs; applying circuits for applying said generated test pattern to the plurality of DRAMs; and a comparator for comparing each response signal received from the plurality of DRAMs with an expected value for judgment.
摘要:
In a circuit board on which a plurality of CPUs are mounted, the CPUs comprises: monitor units for outputting task statuses of the respective CPUs; and a diagnosis circuit connected to the plurality of CPUs, comparing and judging combinations of the task statuses of the plurality of CPUs based on information on task statuses outputted from the monitor units, and detecting false operations and failures of the circuit board.
摘要:
A signature circuit, i.e., a random-number generating circuit, is provided in a memory test apparatus. Also, a signature circuit is provided in each of devices-under-test. This configuration allows the large number of semiconductor integrated-circuit devices to be tested at one time with a high efficiency. This condition realizes a tremendous reduction in the test cost.
摘要:
Semiconductor testing equipment according to the present invention comprises: an algorithmic pattern generator for generating a test pattern for testing a memory under test and applying the pattern to the memory under test; a comparator for comparing a response signal from the memory under test and an expected value from tho algorithmic pattern generator; a fail address acquisition part for storing an address of the memory under test (fail address) when a result compared by the comparator is failed; a fail address analysis part for analyzing the failed address and calculating the address to be repaired (repair address); and a cycle-pattern generator for redundancy processing for inserting the address to be repaired into a test pattern and applying the address to the memory under test, so that even when capacity of the semiconductor memory is increased, a fabrication yield thereof is raised by testing the memory after the packaging and by performing the redundancy processing of a defective.
摘要:
A scan control unit for generating two-dimensional coordinates for performing a scan with an electron beam of an electron scanning microscope is provided with first and second transforming units for transforming coordinates in the horizontal (X) direction and the vertical (V) direction. An area to be tested in a sample is scanned with an electron beam in an arbitrary direction. As the first and second transforming units, small-capacity transformation tables (LUTs) capable of operating at high speed in each of the horizontal (X) direction and the vertical (Y) direction are used. By also using a large-capacity transformation table (LUT) that stores coordinate transformation data corresponding to plural scan types, a test apparatus compatible with the plural scan types, having multiple functions, and capable of performing high-speed scan control is realized.
摘要:
The present invention relates to a DRAM stacked packages, a DIMM, a method for testing them, and a semiconductor manufacturing method. According to the present invention, there is provided a DRAM stacked package comprising: a plurality of stacked DRAMs; external terminals to which test equipment is connected, said external terminals being used to input/output at least address, command, and data; and an interface chip provided between said plurality of stacked DRAMs and said external terminals. The plurality of DRAMs and the interface chip are implemented on a package. The interface chip comprises: a test circuit including: an algorithmic pattern generator for generating a test pattern used to test the plurality of DRAMs; applying circuits for applying said generated test pattern to the plurality of DRAMs; and a comparator for comparing each response signal received from the plurality of DRAMs with an expected value for judgment.
摘要:
In a circuit board on which a plurality of CPUs are mounted, the CPUs comprises: monitor units for outputting task statuses of the respective CPUs; and a diagnosis circuit connected to the plurality of CPUs, comparing and judging combinations of the task statuses of the plurality of CPUs based on information on task statuses outputted from the monitor units, and detecting false operations and failures of the circuit board.